JP2013026358A - Shower plate and vapor phase growth apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus which enables deposition of a compound semiconductor crystal having a stabilized quality on a processed substrate, by preventing warpage due to thermal expansion and temperature rise of a shower plate, thereby inhibiting the growth of a product on the shower plate.SOLUTION: The shower plate for protecting a shower head consists of a plurality of stripe plates each having a plurality of plate holes, and the stripe plates are held slidably for the shower head.

Description

  The present invention relates to a shower plate and a vapor phase growth apparatus such as a vertical showerhead type MOCVD (Metal Organic Chemical Vapor Deposition).

  Conventionally, in the manufacture of light-emitting diodes, semiconductor lasers, space solar power devices, and high-speed devices using compound semiconductor materials, organometallic gases such as trimethylgallium (TMG) or trimethylaluminum (TMA), ammonia (NH3), MOCVD (Metal Organic Chemical Vapor Deposition) method is used in which a compound semiconductor crystal is grown by introducing a hydrogen compound gas such as phosphine (PH3) or arsine (AsH3) into a growth chamber as a reaction gas contributing to film formation. .

  The MOCVD method is a method in which a compound semiconductor crystal is grown on a substrate by introducing the above-mentioned reaction gas together with a carrier gas into a growth chamber and heating it to cause a gas phase reaction on a predetermined substrate. In the production of compound semiconductor crystals using MOCVD, there is always a high demand for how to secure the maximum yield and production capacity while reducing costs while improving the quality of growing compound semiconductor crystals. Has been.

  FIG. 8 shows a schematic configuration of an example of a conventional vertical shower head type MOCVD apparatus used in the MOCVD method. In this MOCVD apparatus, a gas pipe 104 for introducing a reaction gas and a carrier gas from a gas supply source 101 to a growth chamber 103 inside the reaction furnace 102 is connected, and the inside of the growth chamber 103 inside the reaction furnace 102 is connected. A shower head 105 provided with a plurality of gas discharge holes for introducing a reaction gas and a carrier gas into the growth chamber 103 is installed as a gas introduction part at the upper part.

  In addition, a susceptor 107 for placing the substrate 106 is installed below the growth chamber 103 so as to face the shower head 105. The susceptor 107 includes a heater 108 for heating the substrate 106, and is rotatable about a rotation shaft 109 by an actuator (not shown).

  Further, a gas exhaust unit 110 for exhausting the gas in the growth chamber 103 to the outside is installed at the lower part of the reaction furnace 102. The gas exhaust unit 110 is connected via a purge line 111 to an exhaust gas treatment device 112 for rendering the exhausted gas harmless.

  In the case of growing a compound semiconductor crystal in the vertical showerhead type MOCVD apparatus having the above configuration, first, the substrate 106 is set on the susceptor 107, the susceptor 107 is rotated, and the substrate 106 is heated to a predetermined temperature by the heater 108. To do. Thereafter, a reaction gas and a carrier gas (inert gas) are introduced into the growth chamber 103 from a plurality of gas discharge holes provided in the shower head 105.

  A specific example of the shower head will be described with reference to Patent Document 1. As shown in FIG. 9, the shower head 200 disclosed in Patent Document 1 includes a first conduit 202 and a second conduit 203 that separately introduce a plurality of reaction gases into the growth chamber 201, and a first conduit 202 and a second conduit. A cooling chamber 204 for cooling the two conduits 203 is provided. According to the shower head 200 of Patent Document 1, reactive gases can be separately introduced into the growth chamber 201, and then mixed to form a homogeneous mixture at a position close to the heated substrate 205. Have been described.

  However, in the shower head 200 of Patent Document 1, a product due to the gas reacted in the growth chamber 201 adheres to a surface facing the substrate 205 (hereinafter referred to as a shower surface), and the product accumulates to discharge gas. The problem occurs that the holes are clogged. In addition, the product deposited on the shower surface falls on the substrate 205, causing a problem that a defect occurs.

  As a means for solving such a problem, for example, a technique disclosed in Patent Document 2 can be cited. Patent Document 2 discloses a shower head in which the bottom surface of an upper electrode is covered with an electrode cover 301 as shown in FIG. The electrode cover 301 is provided with a pore 303 having the same diameter so as to overlap the gas ejection pore 302 of the upper electrode, and is fixed to the upper electrode with a screw 304. In the shower head of Patent Document 2, it is possible to prevent the product from dropping and being taken into the thin film on the substrate by replacing the electrode cover 301 before the product attached to the electrode cover 301 is deposited. .

  Further, as a similar configuration, Patent Document 3 discloses a shower head 72 that separates a process chamber into an upstream portion and a downstream portion, as shown in FIG. The shower head 72 is a small aluminum plate having a diameter similar to the diameter of the wafer, and is attached to a large ring 73 in a replaceable manner. The shower head 72 is limited and not larger than the process space. This allows different showerheads to be replaced for use with different size wafers and different processing conditions, and the use of smaller showerheads reduces costs and provides greater process flexibility. The gas flow can be concentrated in the space directly above the substrate.

JP-A-8-91989 JP-A-11-131239 Special Table 2002-511529

  The shower head suppresses the growth of the reaction product by cooling the periphery of the gas discharge part as in the cooling chamber 204 of Patent Document 1, for example. The temperature of the electrode cover 301 arranged to face the substrate is likely to increase. In particular, the central portion and the surface portion become high temperature and local thermal expansion occurs. And since the periphery of the electrode cover 301 is being fixed to the upper electrode with the screw 304, as shown in FIG. 12, the center part of the electrode cover 301 warps to the lower electrode side, and the contact with an upper electrode is inadequate It becomes. For this reason, cooling from the upper electrode to the electrode cover 301 is hindered, and the temperature of the electrode cover 301 is increased further.

  When the temperature of the electrode cover 301 becomes high, an undesired gas phase reaction of the reaction gas is promoted and reaction products are likely to be deposited. Therefore, there is a problem that the electrode cover 301 must be replaced frequently and the production capacity is lowered. It was. Further, the undesirable gas phase reaction on the electrode cover 301 hinders the gas phase reaction on the substrate to be processed, and there is a problem that the quality of the compound semiconductor crystal, the film forming speed, and the yield are lowered. Further, when the electrode cover 301 is warped, a gap is formed between the upper electrode and the reaction product is deposited on the surface of the upper electrode.

  The shower head 72 disclosed in Patent Document 3 is also formed in a flat disk shape made of aluminum, and warpage occurs due to the temperature rise of the shower head 72.

  The present invention has been made in view of the above-mentioned conventional problems, and its purpose is to prevent warpage and temperature rise due to thermal expansion of the shower plate, and to suppress the growth of the product on the shower plate, An object of the present invention is to provide a vapor phase growth apparatus capable of forming a compound semiconductor crystal with stable quality on a substrate to be processed.

  A shower plate for protecting a shower head, wherein the shower plate includes a plurality of strip plates having a plurality of plate holes, and the strip plates are slidably held with respect to the shower head.

  Warpage and temperature rise due to thermal expansion of the shower plate can be prevented, growth of the product on the shower plate can be suppressed, and a compound semiconductor crystal with stable quality can be formed on the substrate to be processed.

1 shows an embodiment of a vapor phase growth apparatus according to the present invention, and is a schematic diagram showing an overall configuration of the vapor phase growth apparatus. It is the top view and sectional drawing of the shower plate of Example 1. FIG. 3 is a cross-sectional view showing an end of a shower plate of Example 1. FIG. FIG. 3 is a schematic diagram illustrating an overall configuration of a vapor phase growth apparatus according to a second embodiment. It is the top view and sectional drawing of the shower plate of Example 2. It is sectional drawing which shows the shower plate edge part of Example 2. FIG. It is sectional drawing which shows the shower plate edge part of Example 3. FIG. It is sectional drawing which shows schematic structure of the vapor phase growth apparatus which is a prior art. It is sectional drawing which shows an example of the shower head of the vapor phase growth apparatus of a prior art. It is sectional drawing which shows an example of the shower plate of a prior art. It is sectional drawing which shows another example of the shower head of a prior art. It is sectional drawing which shows the curvature of the shower plate of a prior art.

  Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS. In the drawings of the present invention, the same reference numerals represent the same or corresponding parts.

  FIG. 1 shows an example of a schematic configuration of an MOCVD apparatus 50 as a vapor phase growth apparatus of the present invention. As shown in FIG. 1, the MOCVD apparatus 50 of the present embodiment includes a reaction furnace 1 that isolates the interior from the atmosphere side, and inside the reaction furnace 1 is a reaction external space separated by a reaction chamber partition wall 2. 3 and reaction chamber 4 are provided. A purge gas supply pipe 5 is connected to the reaction external space 3 and purge gas (N 2 gas, H 2 gas) is introduced. The reaction chamber 4 is provided with a substrate holder 7 on which the substrate 6 to be processed is placed.

  The substrate holding unit 7 is provided at one end of the rotation transmitting unit 8 and can be rotated by a rotation mechanism (not shown). A substrate heater 9 for heating the substrate 6 to be processed is provided below the substrate holder 7.

  A shower head 10 is detachably disposed on the upper portion of the reaction furnace 1. The reaction furnace 1 and the shower head 10 are sealed by an O-ring 11a, and can be exhausted from a gas discharge port 12 provided in the reaction furnace 1 to make the inside airtight.

  The shower head 10 includes a first gas distribution space 13 that is filled with a first gas, and a second gas distribution space 14 that is filled with a second gas different from the first gas, and the first gas distribution space 13 and the second gas. An O-ring 11b is provided between the distribution space 14 and an O-ring 11c is provided between the second gas distribution space 14 and the top plate 14c so that each space can be separated. The airtight state of each space is maintained. In addition, the lower part of the shower head 10 is provided with a refrigerant space 15 filled with refrigerant, and the lower wall surface 10a is cooled by the refrigerant space 15 so that the temperature is controlled to be uniform. .

  A shower plate 20 provided with a plurality of plate holes 21a is arranged on the lower wall surface 10a of the shower head 10 in order to prevent the product from directly attaching during film formation. Details of the shower plate 20 will be described later.

  When a compound semiconductor crystal is formed on the substrate 6 to be processed, for example, a first gas containing a group III element is introduced into the first gas distribution space 13 from the first gas introduction port 13a. After cooling through the plurality of first gas supply pipes 13b penetrating, the reaction gas is introduced into the reaction chamber 4 through the plate holes 21a of the shower plate 20 communicating with the gas discharge holes H1 of the first gas supply pipe 13b.

  Further, for example, a second gas containing a group V element is introduced into the second gas distribution space 14 from the second gas introduction port 14 a and passes through the plurality of second gas supply pipes 14 b penetrating the refrigerant space 15. After being cooled, the gas is introduced into the reaction chamber 4 from the plate hole 21a of the shower plate 20 communicating with the gas discharge hole H2 of the second gas supply pipe 14b.

  As described above, the first gas and the second gas are introduced into the reaction chamber 4 separately without being mixed inside the shower head 10, so that the gas phase reaction occurs inside the shower head 10. Is prevented from occurring.

  The substrate 6 to be processed held by the substrate holder 7 is heated to a high temperature by the substrate heater 9, and the first gas and the second gas introduced into the reaction chamber 4 are placed on the substrate 6 to be processed at a high temperature. When it reaches, the gas phase reaction is promoted, and a compound semiconductor thin film is formed on the substrate 6 to be processed. The reaction gas that has passed over the substrate 6 to be processed is discharged from the gas discharge port 12 and made harmless by an exhaust gas processing apparatus (not shown).

  Next, the shower plate 20 of Example 1 which is the characteristic structure of this invention is demonstrated in detail using FIG.2 and FIG.3. 2A is a plan view of the shower plate 20 viewed from the substrate 6 to be processed, FIG. 2B is a cross-sectional view taken along the line AA, and FIG. 2C is a cross-sectional view taken along the line BB. It is sectional drawing.

  As shown in FIG. 2A, the shower plate 20 of the present invention is formed by integrating a plurality of rectangular strip plates 21 having a plurality of plate holes 21a in parallel in the short side direction of the strip plate 21. ing.

  As shown in FIG. 1, the plate hole 21 a of each strip-shaped plate 21 corresponds to the gas discharge holes H <b> 1 and H <b> 2 of the shower head 10. The strip plates 21 are arranged in parallel so that the plurality of plate holes 21a overlap with the gas discharge holes H1 and H2, and the reaction gas can be introduced into the reaction chamber 4 through the gas discharge holes H1 and H2 and the plate holes 21a communicated with each other. It has become.

  The shower plate 20 of the present invention is characterized in that the strip-shaped plate 21 is slidably held in the long side direction with respect to the shower head. In order to make the strip plate 21 slidable, an elongated hole 21b is formed at the end of the strip plate 21 with a length equal to or longer than the extension when the strip plate 21 is thermally expanded along the long side direction. The long hole 21b is screwed to the lower wall surface 10a of the shower head 10 to be slidable.

  FIG. 3 shows a state where the long hole 21b of the strip plate 21 is screwed, and is an enlarged cross-sectional view of a portion A of the MOCVD apparatus 50 of FIG. As shown in FIG. 3, the long hole 21b of the strip-shaped plate 21 is disposed outside (hereinafter referred to as a non-heated region) outside the substrate holding part 7 (hereinafter referred to as a heated region) heated to a high temperature. The strip plate 21 is screwed to the lower wall surface 10a of the shower head 10 with a screw 16, and the strip plate 21 is held on the lower wall surface 10a by the frictional force of the contact surface between the elongated hole 21b of the strip plate 21 and the head of the screw 16 It has become.

  During the film formation, the shower plate 20 has a temperature gradient between the region provided with the plate hole 21a arranged in the heating region and the region provided with the long hole 21b arranged in the non-heating region.

  Since the area | region in which the several plate hole 21a of the shower plate 20 was provided is arrange | positioned in a heating area | region, temperature rises during film-forming and thermal expansion arises. Here, the shower plate 20 is composed of a plurality of strip-shaped plates 21. Since the strip-shaped plate 21 has a rectangular shape, the extension in the long side direction is the extension in the short side direction with respect to the thermal expansion. In order to win, each strip-shaped plate 21 extends in the long-side direction, so that warpage of the strip-shaped plate 21 in the shower plate 20 in the parallel direction can be prevented.

  Further, when the strip plate 21 extends in the long side direction, the strip plate 21 slides along the lower wall surface 10 a of the shower head 10 by overcoming the frictional force of the contact surface between the long hole 21 b and the head of the screw 16. As a result, the stress due to the extension can be absorbed, and the shower plate 20 can be prevented from warping.

  As described above, the shower plate 20 is prevented from warping due to thermal expansion even during film formation, and is held in contact with the lower wall surface 10a of the shower head 10, so that the temperature can be controlled to a low temperature. Therefore, the growth of the product on the surface of the strip-shaped plate 21 is suppressed, and the decrease in the film forming rate on the substrate 6 to be processed is also prevented. Further, clogging of the product in the plate hole 21a and dropping of the product on the substrate 6 to be processed are less likely to occur, and it is not necessary to frequently replace the strip-shaped plate 21, thereby improving the production capacity of the vapor phase growth apparatus. Can be made.

  2 (c), for example, the strip plates 21 are arranged in parallel so that the end surfaces in the short side direction are inclined and the adjacent end surfaces in the short side direction overlap each other. They may be integrated so that no gap is formed. Thereby, it is possible to prevent the reaction gas from entering the shower head 10 from the gap between the strip-shaped plates 21 and the product from adhering.

  The vapor phase growth apparatus according to the second embodiment is configured to be slidable by providing a notch instead of the long hole 21b of the strip-shaped plate 21 shown in the first embodiment. Since other configurations are the same as those of the first embodiment, detailed description thereof is omitted.

  FIG. 4 shows a schematic configuration of an MOCVD apparatus 60 which is a vapor phase growth apparatus according to the second embodiment. As shown in FIG. 4, the shower plate 22 of the MOCVD apparatus 60 includes a strip plate 23 and a plate holder 24, and the plate holder 24 that engages and supports the strip plate 23 is screwed to the shower head 10. Thus, the shower plate 22 is in contact with the lower wall surface 10a.

  5A is a plan view of the shower plate 22 as viewed from the substrate 6 to be processed, FIG. 5B is a cross-sectional view taken along the line AA, and FIG. 5C is a cross-sectional view taken along the line BB. It is sectional drawing. As shown in FIG. 5, the shower plate 22 includes a plurality of rectangular strip plates 23 and a plate holding portion 24 that engages and supports the plurality of strip plates 23. A cut-out portion 23b and a cut-out portion for engaging the respective end portions on the lower surface of the end portion of each strip plate 23 (on the substrate 6 to be processed) and the upper surface of the end portion of the plate holding portion 24 (on the shower head 10 side). 24b is formed.

  Further, as shown in FIG. 5A, the notch 24 b of the plate holding part 24 is formed with a locking end 24 d that locks the notch 23 b of the strip plate 23. Each strip-shaped plate 23 is arranged by sliding the notch portion 23b sequentially along the notch portion 24b to the locking end portion 24d, thereby arranging the plurality of strip-shaped plates 23 in parallel with the plate holding portion 24. The shower plate 22 can be attached smoothly.

  Further, by arranging the plurality of strip plates 23 in this way, the plate holes 23a of the respective strip plates 23 are positioned in the gas discharge holes H1 and H2 of the shower head 10, and the respective strip plates 23 are arranged. The structure prevents the plate holder 24 from slipping through.

  FIG. 6 is an enlarged cross-sectional view of an A portion of the MOCVD apparatus 60 shown in FIG. 4, showing the engagement support portion between the strip plate 23 and the plate holding portion 24. As shown in FIG. 6, the end surface 23 c of the strip plate 23 and the end surface 24 c of the plate holding portion 24 are in a state where the notch portion 23 b of the strip plate 23 and the notch portion 24 b of the plate holding portion 24 are engaged. A space 25 is provided between the strip-shaped plate 23 to absorb the extension due to thermal expansion.

  As shown in FIG. 6, the strip-shaped plate 23 is not directly fixed to the lower wall surface 10 a of the shower head 10, but is held by the frictional force of the contact surface of the notch portion 24 b of the plate holding portion 24. . For this reason, when the strip-shaped plate 23 rises in temperature and thermally expands, the extended portion overcomes the frictional force and slides into the space portion 25, thereby preventing the strip-shaped plate 23 from warping in the long side direction. it can.

  Further, the strip-shaped plate 23 and the plate holding part 24 are shielded so that the notch part 23b and the notch part 24b overlap each other so that the shower head lower wall surface 10a cannot be seen from the substrate 6 to be processed. The backflow of the reaction gas from 4 to the shower head 10 side is prevented, and the product does not adhere to the lower wall surface 10 a of the shower head 10. For this reason, maintenance such as cleaning for the shower head 10 can be reduced.

  FIG. 7 shows a vapor phase growth apparatus according to the third embodiment, in which a lubricating member 26 is provided between the notch portion 23b of the shower plate 22 and the notch portion 24b of the plate holding portion 24 shown in the second embodiment. It has become. Since the configuration other than the lubricating member 26 is the same as that of the second embodiment, a detailed description thereof will be omitted.

  As shown in FIG. 7, the vapor phase growth apparatus according to the third embodiment has a lubricating member 26 having lubricity on the contact surface between the cutout portion 23 b of the strip-shaped plate 23 and the cutout portion 24 b of the plate holding portion 24. It is a feature that is provided. By providing the lubrication member 26, the frictional force at the contact surface between the notch portion 23b of the strip plate 23 and the notch portion 24b of the plate holding portion 24 becomes uniform, and the elongated portion in which the strip plate 23 is thermally expanded. Can be smoothly moved to the space 25. For this reason, it catches on the contact surface of the notch part 23b and the notch part 24b, and when the strip-shaped plate 23 slides biased, the gas discharge holes H1 and H2 and the plate hole 23a are shifted to block the hole, It can be prevented that the space portion 25 decreases and the extension due to thermal expansion cannot be absorbed.

  Further, the provision of the lubricating member 26 increases the thermal resistance between the notch portion 23b of the strip plate 23 and the notch portion 24b of the plate holding portion 24, and the strip plate disposed in the heating region. Since the heat transfer from the plate 23 to the plate holder 24 arranged in the non-heated region is divided, the overall temperature of each of the strip plate 23 and the plate holder 24 can be kept more uniform, and some of them are locally Can be prevented from warping due to thermal expansion.

  The material of the lubricating member 26 is preferably a material composed of any one of high purity carbon, pyrolytic carbon coating carbon, pyrolytic carbon, and boron nitride. These materials have lubricity, corrosion resistance against H2 and NH3 gas, heat resistance against heat, and the like, so they are suitable for the internal environment of the reactor 1 of the vapor phase growth apparatus and are provided with the shower plate 22. It is possible.

  As mentioned above, although each Example was demonstrated, it cannot be overemphasized in this invention that the shower head 10, the shower plates 20, 22 and other members which comprise the MOCVD apparatus 50 and 60 are not limited to the structure shown in each Example. .

For example, the shower plates 20 and 22 desirably have a thermal conductivity of 100 W / (m · K) or more and a thermal expansion coefficient of 6 × 10 ⁻⁶ / ° C. or less. When the thermal conductivity is 100 W / (m · K) or more, the surface temperatures of the shower plates 20 and 22 are kept low, and the temperature difference from the back surface is reduced. Moreover, when the thermal expansion coefficient is 6 × 10 ⁻⁶ / ° C. or less, thermal expansion is difficult and the amount of elongation is small. For this reason, the warp of the shower plates 20 and 23 is prevented, the growth of the product on the surface of the shower plates 20 and 22 is suppressed, and the film formation rate, film uniformity and film reproduction on the substrate 6 to be processed are suppressed. It is possible to provide a vapor phase growth apparatus and a vapor phase growth method that can ensure the property.

  The material of the strip-shaped plates 21 and 23 and the plate holding portion 24 constituting the shower plates 20 and 22 is molybdenum or tungsten, high-purity carbon, SiC-coated carbon, TaC-coated carbon, pyrolytic carbon-coated carbon, thermal decomposition. Any of carbon is desirable. Since these materials are materials with high thermal conductivity and low thermal expansion coefficient, they have the effect of preventing the warping of the shower plates 20 and 22 as described above, and have corrosion resistance against H2 and NH3 gas. The durability of the shower plates 20 and 22 can be improved. For this reason, since the replacement frequency of the shower plates 20 and 22 can be reduced, tact time reduction and cost reduction can be achieved.

  In addition, the present invention brings about a remarkable effect even in a large apparatus including a multi-furnace furnace that processes a plurality of substrates to be processed. For example, in a single furnace that processes one 6-inch substrate, the diameter of the shower head 10 and the shower plates 20 and 22 is about 150 mm. In a multi-furnace furnace that processes seven 6-inch substrates, Even if it arrange | positions, the diameter reaches to 450 mm of 3 times, and the extension part by the thermal expansion of the shower plates 20 and 22 will increase 3 times. Further, when there is a temperature distribution in the shower plates 20 and 22, the contribution of deformation due to thermal expansion is further increased.

  According to the present invention, even in a large apparatus in which the diameters of the shower head 10 and the shower plates 20 and 22 are increased, warpage of the shower plates 20 and 22 is prevented, and the surface temperature of the shower plates 20 and 22 does not become high. The growth of products formed on the surfaces of the shower plates 20 and 22 can be suppressed, and the film formation rate, film uniformity, and film reproducibility on the substrate 6 can be ensured.

  Further, it should be understood that the embodiments disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

1 Reactor 4 Reaction chamber (growth chamber)
6 Substrate 7 Substrate holder 9 Substrate heater 10 Shower head 20, 22 Shower plate 21, 23 Strip plate 21a, 23a Plate hole 21b, 24a Screw hole 23b, 24b Notch 24 Plate holder 25 Space 26 Lubricating members 50, 60 MOCVD equipment (vapor phase growth equipment)

Claims (7)

A shower plate for protecting the shower head,
The shower plate comprises a plurality of strip-shaped plates having a plurality of plate holes,
The strip plate is slidably held with respect to the shower head.   The shower plate according to claim 1, wherein a long hole formed in an end portion of the strip-shaped plate is screwed to the shower head. The shower plate includes a plate holding portion for holding the strip-shaped plate,
The shower plate according to claim 1, wherein a cutout portion formed at an end portion of the strip-shaped plate is disposed on a cutout portion formed in the plate holding portion.   4. The shower plate according to claim 3, wherein a lubricating member is provided between the notch portion of the strip-shaped plate and the notch portion of the plate holding portion.   The shower plate according to claim 4, wherein the lubricating member is made of a material containing any one of high-purity carbon, pyrolytic carbon, and boron nitride.   The said strip-shaped plate is comprised with the raw material containing either molybdenum, tungsten, high purity carbon, SiC film carbon, TaC film carbon, or pyrolytic carbon, The Claim 1 thru | or 5 characterized by the above-mentioned. Shower plate.   A vapor phase growth apparatus comprising the shower plate according to any one of claims 1 to 6.