JPS63177957U - - Google Patents
Info
- Publication number
- JPS63177957U JPS63177957U JP16986U JP16986U JPS63177957U JP S63177957 U JPS63177957 U JP S63177957U JP 16986 U JP16986 U JP 16986U JP 16986 U JP16986 U JP 16986U JP S63177957 U JPS63177957 U JP S63177957U
- Authority
- JP
- Japan
- Prior art keywords
- reactive gas
- upper electrode
- wafer
- cavity
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 239000000376 reactant Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第1図は本考案に係るプラズマ処理装置の第1
実施例の断面図、第2図は上部電極の平面図、第
3図は上部電極の一部拡大断面図、第4図は第2
実施例の断面図、第5図は従来装置の断面図であ
る。
2……上部電極、3……下部電極、4……ウエ
ーハ、5……空洞、10……反応ガス噴出口。
Figure 1 shows the first part of the plasma processing apparatus according to the present invention.
2 is a plan view of the upper electrode, FIG. 3 is a partially enlarged sectional view of the upper electrode, and FIG. 4 is a cross-sectional view of the upper electrode.
A sectional view of the embodiment, and FIG. 5 is a sectional view of a conventional device. 2... Upper electrode, 3... Lower electrode, 4... Wafer, 5... Cavity, 10... Reactant gas outlet.
補正 昭62.5.21
図面の簡単な説明を次のように補正する。
明細書第5頁第19行乃至第6頁第2行「…第
2図は上部……である。」を「第2図は上部電極
の一部拡大断面図、第3図は第2実施例の断面図
、第4図は従来装置の断面図である。」と補正す
る。Amendment May 21, 1982 The brief description of the drawing is amended as follows. From page 5, line 19 to page 6, line 2 of the specification, ``...Figure 2 shows the upper part...'' was changed to ``Figure 2 is a partially enlarged sectional view of the upper electrode, and Figure 3 is the second implementation. The cross-sectional view of the example and FIG. 4 are cross-sectional views of the conventional device.''
Claims (1)
4を挾んで平行に上部電極2を設け、ウエーハ4
に反応ガスを噴射してエツチング等を行うプラズ
マ処理装置において、下部電極3又は上部電極2
のいずれか一方の内部に反応ガス滞留用の空洞5
を設け、空洞5から貫通して外周方向から軸心方
向に向けて反応ガスが噴出するように傾斜したス
リツト状の反応ガス噴出口10を設けたことを特
徴とするプラズマ処理装置。 A lower electrode 3 on which the wafer 4 is placed, and an upper electrode 2 placed in parallel with the wafer 4 sandwiched therebetween.
In a plasma processing apparatus that performs etching, etc. by injecting a reactive gas to the lower electrode 3 or the upper electrode 2.
A cavity 5 for reaction gas retention is provided inside one of the
1. A plasma processing apparatus characterized in that a slit-shaped reactive gas outlet 10 penetrating from the cavity 5 and inclined so that the reactive gas is discharged from the outer circumferential direction toward the axial direction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16986U JPS63177957U (en) | 1986-01-07 | 1986-01-07 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16986U JPS63177957U (en) | 1986-01-07 | 1986-01-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63177957U true JPS63177957U (en) | 1988-11-17 |
Family
ID=30776905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16986U Pending JPS63177957U (en) | 1986-01-07 | 1986-01-07 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63177957U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014154248A (en) * | 2013-02-05 | 2014-08-25 | Mitsubishi Electric Corp | Plasma processing device |
-
1986
- 1986-01-07 JP JP16986U patent/JPS63177957U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014154248A (en) * | 2013-02-05 | 2014-08-25 | Mitsubishi Electric Corp | Plasma processing device |