JPS63177957U

JPS63177957U -

Info

Publication number: JPS63177957U
Application number: JP16986U
Authority: JP
Priority date: 1986-01-07
Filing date: 1986-01-07
Publication date: 1988-11-17

Description

[Brief explanation of the drawing]

第１図は本考案に係るプラズマ処理装置の第１
実施例の断面図、第２図は上部電極の平面図、第
３図は上部電極の一部拡大断面図、第４図は第２
実施例の断面図、第５図は従来装置の断面図であ
る。２……上部電極、３……下部電極、４……ウエ
ーハ、５……空洞、１０……反応ガス噴出口。 Figure 1 shows the first part of the plasma processing apparatus according to the present invention.
2 is a plan view of the upper electrode, FIG. 3 is a partially enlarged sectional view of the upper electrode, and FIG. 4 is a cross-sectional view of the upper electrode.
A sectional view of the embodiment, and FIG. 5 is a sectional view of a conventional device. 2... Upper electrode, 3... Lower electrode, 4... Wafer, 5... Cavity, 10... Reactant gas outlet.

補正昭６２．５．２１図面の簡単な説明を次のように補正する。明細書第５頁第１９行乃至第６頁第２行「…第
２図は上部……である。」を「第２図は上部電極
の一部拡大断面図、第３図は第２実施例の断面図
、第４図は従来装置の断面図である。」と補正す
る。Amendment May 21, 1982 The brief description of the drawing is amended as follows. From page 5, line 19 to page 6, line 2 of the specification, ``...Figure 2 shows the upper part...'' was changed to ``Figure 2 is a partially enlarged sectional view of the upper electrode, and Figure 3 is the second implementation. The cross-sectional view of the example and FIG. 4 are cross-sectional views of the conventional device.''

Claims

[Scope of utility model registration request]

A lower electrode 3 on which the wafer 4 is placed, and an upper electrode 2 placed in parallel with the wafer 4 sandwiched therebetween.
In a plasma processing apparatus that performs etching, etc. by injecting a reactive gas to the lower electrode 3 or the upper electrode 2.
A cavity 5 for reaction gas retention is provided inside one of the
1. A plasma processing apparatus characterized in that a slit-shaped reactive gas outlet 10 penetrating from the cavity 5 and inclined so that the reactive gas is discharged from the outer circumferential direction toward the axial direction.