JPS6453757U - - Google Patents

Info

Publication number
JPS6453757U
JPS6453757U JP14845387U JP14845387U JPS6453757U JP S6453757 U JPS6453757 U JP S6453757U JP 14845387 U JP14845387 U JP 14845387U JP 14845387 U JP14845387 U JP 14845387U JP S6453757 U JPS6453757 U JP S6453757U
Authority
JP
Japan
Prior art keywords
electrode
plasma cvd
cvd apparatus
workpiece
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14845387U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14845387U priority Critical patent/JPS6453757U/ja
Publication of JPS6453757U publication Critical patent/JPS6453757U/ja
Pending legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す断面図、第2
図は本考案と従来例とにおける成膜速度を示す図
、第3図は比較例を示す断面図、第4図、第5図
は夫々従来例を示す要部断面図である。 図中1は電極、2は外筒、7はワーク、9は高
周波電源、11はガス導入口、14はじやま板で
ある。
Fig. 1 is a sectional view showing one embodiment of the present invention;
3 is a cross-sectional view showing a comparative example, and FIGS. 4 and 5 are cross-sectional views of main parts of the conventional example. In the figure, 1 is an electrode, 2 is an outer cylinder, 7 is a workpiece, 9 is a high frequency power source, 11 is a gas inlet, and 14 is a cutting board.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 円筒型あるいは平行平板型電極内に、接地され
たワークを配置し、その電極に高周波電源を接続
すると共に、その電極内に膜形成用ガスを導入す
ると共に電極の一方から排気してワークに膜を形
成するプラズマCVD装置において、上記電極の
排気側に、該電極と同電位のじやま板を設けたこ
とを特徴とするプラズマCVD装置。
A grounded workpiece is placed inside a cylindrical or parallel plate electrode, a high frequency power source is connected to the electrode, and a film forming gas is introduced into the electrode and exhausted from one side of the electrode to form a film on the workpiece. A plasma CVD apparatus for forming a plasma CVD apparatus, characterized in that a diagonal plate having the same potential as the electrode is provided on the exhaust side of the electrode.
JP14845387U 1987-09-30 1987-09-30 Pending JPS6453757U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14845387U JPS6453757U (en) 1987-09-30 1987-09-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14845387U JPS6453757U (en) 1987-09-30 1987-09-30

Publications (1)

Publication Number Publication Date
JPS6453757U true JPS6453757U (en) 1989-04-03

Family

ID=31419793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14845387U Pending JPS6453757U (en) 1987-09-30 1987-09-30

Country Status (1)

Country Link
JP (1) JPS6453757U (en)

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