JPS63136327U - - Google Patents

Info

Publication number
JPS63136327U
JPS63136327U JP2818987U JP2818987U JPS63136327U JP S63136327 U JPS63136327 U JP S63136327U JP 2818987 U JP2818987 U JP 2818987U JP 2818987 U JP2818987 U JP 2818987U JP S63136327 U JPS63136327 U JP S63136327U
Authority
JP
Japan
Prior art keywords
wafer holder
reaction tube
cylindrical
wafer
etch tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2818987U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2818987U priority Critical patent/JPS63136327U/ja
Publication of JPS63136327U publication Critical patent/JPS63136327U/ja
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図aは本考案の円筒型プラズマエツチング
装置の第1の実施例の断面図、第1図bは同側面
図、第2図aは本考案の第2の実施例を示す断面
図、第2図bは同平面図、第3図aは従来の円筒
型プラズマエツチング装置の断面図、第3図bは
同側面図である。 11,21……反応管、12,22……電極板
、13,23……エツチトンネル、14,24…
…ウエハーホルダ、15,25……ウエハー、1
6,26……ガス導入管、17,27……排気管
、18,28……蓋体。
FIG. 1a is a sectional view of a first embodiment of a cylindrical plasma etching apparatus of the present invention, FIG. 1b is a side view of the same, and FIG. 2a is a sectional view of a second embodiment of the present invention. FIG. 2b is a plan view of the same, FIG. 3a is a sectional view of the conventional cylindrical plasma etching apparatus, and FIG. 3b is a side view of the same. 11, 21... Reaction tube, 12, 22... Electrode plate, 13, 23... Etch tunnel, 14, 24...
...Wafer holder, 15, 25...Wafer, 1
6, 26... Gas introduction pipe, 17, 27... Exhaust pipe, 18, 28... Lid body.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 反応管と、該反応管内に設置され、プラズマと
エツチヤントとを分離する同筒状エツチトンネル
と、該円筒状エツチトンネル内に挿入されるウエ
ハー搭載用ウエハーホルダとを有し、ウエハーホ
ルダとエツチトンネルの内面との間を一定間隔に
保つて該ウエハーホルダを前記反応管の蓋体に保
持させたことを特徴とする円筒型プラズマエツチ
ング装置。
It has a reaction tube, a cylindrical etch tunnel installed in the reaction tube to separate plasma and etchant, and a wafer holder for mounting a wafer inserted into the cylindrical etch tunnel. A cylindrical plasma etching apparatus characterized in that the wafer holder is held by the lid of the reaction tube with a constant distance between the wafer holder and the inner surface of the wafer holder.
JP2818987U 1987-02-27 1987-02-27 Pending JPS63136327U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2818987U JPS63136327U (en) 1987-02-27 1987-02-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2818987U JPS63136327U (en) 1987-02-27 1987-02-27

Publications (1)

Publication Number Publication Date
JPS63136327U true JPS63136327U (en) 1988-09-07

Family

ID=30830920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2818987U Pending JPS63136327U (en) 1987-02-27 1987-02-27

Country Status (1)

Country Link
JP (1) JPS63136327U (en)

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