JPS62148570U - - Google Patents
Info
- Publication number
- JPS62148570U JPS62148570U JP3575686U JP3575686U JPS62148570U JP S62148570 U JPS62148570 U JP S62148570U JP 3575686 U JP3575686 U JP 3575686U JP 3575686 U JP3575686 U JP 3575686U JP S62148570 U JPS62148570 U JP S62148570U
- Authority
- JP
- Japan
- Prior art keywords
- discharge electrode
- plasma processing
- chamber
- sample
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
第１図は本考案に係るプラズマ処理装置の全体
構成図、第２図はセルフバイアス電圧とエツチン
グ速度及び選択比との関係を示すグラフである。
尚、図面中１はチヤンバー、４は上部電極、５
は下部電極、６は試料、７はマツチング回路、８
は高周波電源、１３は可変抵抗である。
FIG. 1 is an overall configuration diagram of a plasma processing apparatus according to the present invention, and FIG. 2 is a graph showing the relationship between self-bias voltage, etching rate, and selectivity. In the drawing, 1 is a chamber, 4 is an upper electrode, and 5 is a chamber.
is the lower electrode, 6 is the sample, 7 is the matching circuit, 8
is a high frequency power supply, and 13 is a variable resistor.
Claims (1)
し、この放電電極をマツチング回路を介して高周
波電源に接続したプラズマ処理装置において、前
記放電電極は可変抵抗を介してアースに接続され
ていることを特徴とするプラズマ処理装置。 In a plasma processing apparatus in which a discharge electrode on which a sample is placed is arranged in a chamber and this discharge electrode is connected to a high frequency power source via a matching circuit, the discharge electrode is connected to ground via a variable resistor. A plasma processing device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3575686U JPS62148570U (en) | 1986-03-11 | 1986-03-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3575686U JPS62148570U (en) | 1986-03-11 | 1986-03-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62148570U true JPS62148570U (en) | 1987-09-19 |
Family
ID=30845529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3575686U Pending JPS62148570U (en) | 1986-03-11 | 1986-03-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62148570U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01218626A (en) * | 1988-02-29 | 1989-08-31 | Hitachi Ltd | Discharge washing apparatus |
| JPH02270320A (en) * | 1989-04-11 | 1990-11-05 | Hitachi Ltd | Method and device of surface treatment |
| JPH03249191A (en) * | 1990-02-28 | 1991-11-07 | Nippon Columbia Co Ltd | Production of stamper |
| JPH06244147A (en) * | 1993-02-16 | 1994-09-02 | Tokyo Electron Ltd | Plasma treating device |
| WO2019229784A1 (en) * | 2018-05-28 | 2019-12-05 | 株式会社日立ハイテクノロジーズ | Plasma treatment apparatus |
-
1986
- 1986-03-11 JP JP3575686U patent/JPS62148570U/ja active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01218626A (en) * | 1988-02-29 | 1989-08-31 | Hitachi Ltd | Discharge washing apparatus |
| JPH02270320A (en) * | 1989-04-11 | 1990-11-05 | Hitachi Ltd | Method and device of surface treatment |
| JPH03249191A (en) * | 1990-02-28 | 1991-11-07 | Nippon Columbia Co Ltd | Production of stamper |
| JPH06244147A (en) * | 1993-02-16 | 1994-09-02 | Tokyo Electron Ltd | Plasma treating device |
| WO2019229784A1 (en) * | 2018-05-28 | 2019-12-05 | 株式会社日立ハイテクノロジーズ | Plasma treatment apparatus |
| KR20190137062A (en) * | 2018-05-28 | 2019-12-10 | 가부시키가이샤 히다치 하이테크놀로지즈 | Plasma processing device |
| JPWO2019229784A1 (en) * | 2018-05-28 | 2020-08-27 | 株式会社日立ハイテク | Plasma processing device |
| TWI723406B (en) * | 2018-05-28 | 2021-04-01 | 日商日立全球先端科技股份有限公司 | Plasma processing device |
| US11424106B2 (en) | 2018-05-28 | 2022-08-23 | Hitachi High-Tech Corporation | Plasma processing apparatus |