JPS5650515A - Endpoint detecting method - Google Patents

Endpoint detecting method

Info

Publication number
JPS5650515A
JPS5650515A JP12754679A JP12754679A JPS5650515A JP S5650515 A JPS5650515 A JP S5650515A JP 12754679 A JP12754679 A JP 12754679A JP 12754679 A JP12754679 A JP 12754679A JP S5650515 A JPS5650515 A JP S5650515A
Authority
JP
Japan
Prior art keywords
etching
diffracted
photodetector
wafer
endpoint
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12754679A
Other languages
Japanese (ja)
Inventor
Tadashi Nishimura
Makoto Hirayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12754679A priority Critical patent/JPS5650515A/en
Publication of JPS5650515A publication Critical patent/JPS5650515A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enable a simple and accurate detection of an etching endpoint by a method wherein a diffracted grid pattern is provided on the surface of a film to be etched when a dryetchng polycrystalline Si or the like is performed and a diffracted light is monitored with a photodetector by irradiating a laser beam. CONSTITUTION:A wafer 11 is placed in an etching chamber 10. The wafer 11 is formed on a silicon oxide film 21 provided, for example, on the surface of a single crystal Si substrate 20, and on this wafer 11 a diffracted grid pattern 23 consisting of a resist is formed. And when performing an etching, its diffracted light is detected by a photodetector 17 by irradiating a laser beam to a diffracted grid. At this time, the diffracted light intensity is saturated when a polycrystalline Si film etching is finished and the output of the photodetector is also saturated. Hereby, the detection of the endpoint of the etching can be performed accurately and easily.
JP12754679A 1979-10-01 1979-10-01 Endpoint detecting method Pending JPS5650515A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12754679A JPS5650515A (en) 1979-10-01 1979-10-01 Endpoint detecting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12754679A JPS5650515A (en) 1979-10-01 1979-10-01 Endpoint detecting method

Publications (1)

Publication Number Publication Date
JPS5650515A true JPS5650515A (en) 1981-05-07

Family

ID=14962674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12754679A Pending JPS5650515A (en) 1979-10-01 1979-10-01 Endpoint detecting method

Country Status (1)

Country Link
JP (1) JPS5650515A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496425A (en) * 1984-01-30 1985-01-29 At&T Technologies, Inc. Technique for determining the end point of an etching process
JPS6134944A (en) * 1984-04-13 1986-02-19 アプライド　マテリアルズ　インコ−ポレ−テツド Laser interferometer system for monitoring and controlling ic step and method therefor
JPS6415931A (en) * 1987-06-04 1989-01-19 Philips Nv Manufacture of semiconductor device
JPH0223617A (en) * 1988-07-13 1990-01-25 Mitsubishi Electric Corp Forming method for trench of semiconductor substrate wafer
JPH0758081A (en) * 1993-08-10 1995-03-03 Nec Corp Method and apparatus for measuring dry etching depth
JP2015188025A (en) * 2014-03-27 2015-10-29 株式会社日立ハイテクノロジーズ plasma processing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496425A (en) * 1984-01-30 1985-01-29 At&T Technologies, Inc. Technique for determining the end point of an etching process
JPS6134944A (en) * 1984-04-13 1986-02-19 アプライド　マテリアルズ　インコ−ポレ−テツド Laser interferometer system for monitoring and controlling ic step and method therefor
JPS6415931A (en) * 1987-06-04 1989-01-19 Philips Nv Manufacture of semiconductor device
JPH0223617A (en) * 1988-07-13 1990-01-25 Mitsubishi Electric Corp Forming method for trench of semiconductor substrate wafer
JPH0758081A (en) * 1993-08-10 1995-03-03 Nec Corp Method and apparatus for measuring dry etching depth
JP2015188025A (en) * 2014-03-27 2015-10-29 株式会社日立ハイテクノロジーズ plasma processing method

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