JPS5650516A - Endpoint detecting method - Google Patents

Endpoint detecting method

Info

Publication number
JPS5650516A
JPS5650516A JP12764879A JP12764879A JPS5650516A JP S5650516 A JPS5650516 A JP S5650516A JP 12764879 A JP12764879 A JP 12764879A JP 12764879 A JP12764879 A JP 12764879A JP S5650516 A JPS5650516 A JP S5650516A
Authority
JP
Japan
Prior art keywords
film
etched
photoresist
wafer
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12764879A
Other languages
Japanese (ja)
Inventor
Koichi Nagasawa
Natsuo Tsubouchi
Masahiro Yoneda
Hiroji Harada
Katsuhiro Hirata
Masahiko Denda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12764879A priority Critical patent/JPS5650516A/en
Publication of JPS5650516A publication Critical patent/JPS5650516A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enable an accurate detection of an etching endpoint by a method wherein a laser beam is irradiated and scanned between both ends of a protective film for a mask provided on a film to be etched when a dryetching a polycrystalline Si or the like is performed and the pattern width of the film to be etched is measured by detecting reflected light. CONSTITUTION:A semiconductor wafer 11 to be etched, supported by a supporting base, is provided inside an outer wall 10 of a plasma etching device consisting of transparent quartz glass or the like. The wafer 11 consists of a polycrystalline silicon film 22 formed on a silicon substrate 20 provided on a gate oxide film 21, and a photoresist pattern 23 is formed on said film 22. And a laser beam 12 is irradiated between both ends of photoresist 23 through an intermediate of an outer wall 10 and reflected light is detected by placing ray-receiving elements 13 and 14 for photodetection on both ends of the photoresist 23. Hence, characteristics can be made uniform by performing an etching while a pattern size of a polcrystalline Si film, to be etched for every wafer, is being measured.
JP12764879A 1979-10-02 1979-10-02 Endpoint detecting method Pending JPS5650516A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12764879A JPS5650516A (en) 1979-10-02 1979-10-02 Endpoint detecting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12764879A JPS5650516A (en) 1979-10-02 1979-10-02 Endpoint detecting method

Publications (1)

Publication Number Publication Date
JPS5650516A true JPS5650516A (en) 1981-05-07

Family

ID=14965284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12764879A Pending JPS5650516A (en) 1979-10-02 1979-10-02 Endpoint detecting method

Country Status (1)

Country Link
JP (1) JPS5650516A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098896A (en) * 1983-11-02 1985-06-01 Aida Eng Ltd Speed controller of step motor
JPS62168796U (en) * 1986-04-15 1987-10-26
JPH02303022A (en) * 1989-04-28 1990-12-17 Internatl Business Mach Corp <Ibm> Datter formation metaod

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098896A (en) * 1983-11-02 1985-06-01 Aida Eng Ltd Speed controller of step motor
JPS62168796U (en) * 1986-04-15 1987-10-26
JPH02303022A (en) * 1989-04-28 1990-12-17 Internatl Business Mach Corp <Ibm> Datter formation metaod

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