JPS5739535A - Etching control method - Google Patents

Etching control method

Info

Publication number
JPS5739535A
JPS5739535A JP11524580A JP11524580A JPS5739535A JP S5739535 A JPS5739535 A JP S5739535A JP 11524580 A JP11524580 A JP 11524580A JP 11524580 A JP11524580 A JP 11524580A JP S5739535 A JPS5739535 A JP S5739535A
Authority
JP
Japan
Prior art keywords
etched
etching
layer
metal layer
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11524580A
Other languages
Japanese (ja)
Inventor
Kiyohiro Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11524580A priority Critical patent/JPS5739535A/en
Publication of JPS5739535A publication Critical patent/JPS5739535A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To improve the accuracy of etching by improving the sensitivity of detecting the completion time of gas plasma etching, by a method wherein a metal layer is formed under a layer to be etched and the completion time of etching is determined as the time when the metal layer begins being etched after the prescribed layer has been etched. CONSTITUTION:A semiconductor silicone substrate 21 on which a semiconductor element region is formed and a monitor substrate 22 which consists of a silicone substrate on which an Mo layer is formed as a metal layer by spatter evaporation. Then as etched substance a CVD SiO2 film 24 is formed on the semiconductor silicone substrate 21 and at the same time on the monitor substrate 22. Then etching pattern is formed by photo-sensitive resin 25 and the film 24 is etched in the atmosphere of CF4 gas plasma. As the reaction speed of CF4 and Mo is higher than that of CF4 and SiO2, the potential of a high frequency electrode drops significantly and becomes constant after SiO2 is completely etched. Thus the completion time of etching can easily be detected.
JP11524580A 1980-08-20 1980-08-20 Etching control method Pending JPS5739535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11524580A JPS5739535A (en) 1980-08-20 1980-08-20 Etching control method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11524580A JPS5739535A (en) 1980-08-20 1980-08-20 Etching control method

Publications (1)

Publication Number Publication Date
JPS5739535A true JPS5739535A (en) 1982-03-04

Family

ID=14657927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11524580A Pending JPS5739535A (en) 1980-08-20 1980-08-20 Etching control method

Country Status (1)

Country Link
JP (1) JPS5739535A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253228A (en) * 1984-05-30 1985-12-13 Hitachi Ltd Monitoring of etching
EP0200952A2 (en) * 1985-05-06 1986-11-12 International Business Machines Corporation Monitoring technique for plasma etching
JPS63240023A (en) * 1987-03-27 1988-10-05 Fujitsu Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253228A (en) * 1984-05-30 1985-12-13 Hitachi Ltd Monitoring of etching
EP0200952A2 (en) * 1985-05-06 1986-11-12 International Business Machines Corporation Monitoring technique for plasma etching
JPS63240023A (en) * 1987-03-27 1988-10-05 Fujitsu Ltd Manufacture of semiconductor device

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