JPS57106124A - Wiring electrode - Google Patents
Wiring electrodeInfo
- Publication number
- JPS57106124A JPS57106124A JP18344880A JP18344880A JPS57106124A JP S57106124 A JPS57106124 A JP S57106124A JP 18344880 A JP18344880 A JP 18344880A JP 18344880 A JP18344880 A JP 18344880A JP S57106124 A JPS57106124 A JP S57106124A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- heat treatment
- eliminate
- ion beam
- wiring electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010884 ion-beam technique Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To eliminate a heat treatment by accumulating a metallic layer on the surface of a substrate exposed via a contacting hole formed at an insulator layer by employing a converged ion beam. CONSTITUTION:A contacting hole is formed by utilizing a photoresist film at an SiO2 film 12 formed on an Si substrate 11, an aluminum accumulated layer 15 is formed by using a converged ion beam, a resist is then removed, and a metallic layer 14 is then formed. Since a preferable contact can be performed in this manner at the time of forming the layer 15, it can eliminate a heat treatment, thereby reducing the influence of the heat treatment to the sybstrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18344880A JPS57106124A (en) | 1980-12-24 | 1980-12-24 | Wiring electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18344880A JPS57106124A (en) | 1980-12-24 | 1980-12-24 | Wiring electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57106124A true JPS57106124A (en) | 1982-07-01 |
Family
ID=16135945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18344880A Pending JPS57106124A (en) | 1980-12-24 | 1980-12-24 | Wiring electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57106124A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5266835A (en) * | 1988-02-02 | 1993-11-30 | National Semiconductor Corporation | Semiconductor structure having a barrier layer disposed within openings of a dielectric layer |
| JP2008226853A (en) * | 2003-12-17 | 2008-09-25 | Furukawa Electric Co Ltd:The | Inverter surge resistance insulated wire and its manufacturing method |
-
1980
- 1980-12-24 JP JP18344880A patent/JPS57106124A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5266835A (en) * | 1988-02-02 | 1993-11-30 | National Semiconductor Corporation | Semiconductor structure having a barrier layer disposed within openings of a dielectric layer |
| JP2008226853A (en) * | 2003-12-17 | 2008-09-25 | Furukawa Electric Co Ltd:The | Inverter surge resistance insulated wire and its manufacturing method |
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