JPS5576903A - Method for measuring thickness of thin semiconductor film - Google Patents

Method for measuring thickness of thin semiconductor film

Info

Publication number
JPS5576903A
JPS5576903A JP14991178A JP14991178A JPS5576903A JP S5576903 A JPS5576903 A JP S5576903A JP 14991178 A JP14991178 A JP 14991178A JP 14991178 A JP14991178 A JP 14991178A JP S5576903 A JPS5576903 A JP S5576903A
Authority
JP
Japan
Prior art keywords
light
crystal
fluorescent light
wavelength
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14991178A
Other languages
Japanese (ja)
Inventor
Masashi Ozeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14991178A priority Critical patent/JPS5576903A/en
Publication of JPS5576903A publication Critical patent/JPS5576903A/en
Pending legal-status Critical Current

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  • Length Measuring Devices By Optical Means (AREA)

Abstract

PURPOSE: To measure the thickness of a thin semiconductor film in terms of time elapsed, by irradiating the surface of the film with light of more than crystal band gap energy and detecting fluorescent light diffused by minority carriers produced by the light.
CONSTITUTION: When the surface of a thin film is irradiated with a laser light pulse to produce numerous minority carriers, fluorescent light having a component of wavelength intrinsic with regard to the crystal boundary or substrate crystal is generated. Since the wavelength depends on the impurity level of the crystal, the wavelength can be previously determined. The fluorescent light is changed into an electric signal through a spectroscope and a light detector to record the change in the intensity of the light with time. The change is compared with a predetermined fluorescent light intensity curve to determined the thickness of the thin film.
COPYRIGHT: (C)1980,JPO&Japio
JP14991178A 1978-12-06 1978-12-06 Method for measuring thickness of thin semiconductor film Pending JPS5576903A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14991178A JPS5576903A (en) 1978-12-06 1978-12-06 Method for measuring thickness of thin semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14991178A JPS5576903A (en) 1978-12-06 1978-12-06 Method for measuring thickness of thin semiconductor film

Publications (1)

Publication Number Publication Date
JPS5576903A true JPS5576903A (en) 1980-06-10

Family

ID=15485281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14991178A Pending JPS5576903A (en) 1978-12-06 1978-12-06 Method for measuring thickness of thin semiconductor film

Country Status (1)

Country Link
JP (1) JPS5576903A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57147004A (en) * 1981-03-08 1982-09-10 Nippon Telegr & Teleph Corp <Ntt> Method for optical measurement of semiconductor plate dimension

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57147004A (en) * 1981-03-08 1982-09-10 Nippon Telegr & Teleph Corp <Ntt> Method for optical measurement of semiconductor plate dimension
JPH045925B2 (en) * 1981-03-08 1992-02-04 Nippon Telegraph & Telephone

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