JPS6473621A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6473621A JPS6473621A JP23012187A JP23012187A JPS6473621A JP S6473621 A JPS6473621 A JP S6473621A JP 23012187 A JP23012187 A JP 23012187A JP 23012187 A JP23012187 A JP 23012187A JP S6473621 A JPS6473621 A JP S6473621A
- Authority
- JP
- Japan
- Prior art keywords
- time
- substrate
- etching
- intensity
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To reduce the number of samples by irradiating a semiconductor substrate formed with a thin film thereon with an infrared ray, and measuring the intensity of the infrared ray transmitted through the substrate or reflected on the substrate to obtain optimum etching time to remove the thin film. CONSTITUTION:An infrared light 21 is irradiated perpendicularly to a main face from one main face side formed with a thin film 2 on a semiconductor substrate 1, absorbed therein in certain degree, and transmitted from the rear face of the substrate 1. Absorbance is obtained from the ratio of the intensity I of the transmitted light 22 to the intensity I0 of the incident light 21. The substrate 1 is etched for a predetermined time, and infrared absorption spectrum is gain measured. The etching and the measuring of infrared absorption spectrum are alternately repeated. When the etching is conducted for a time te or longer, the complete removal of the film 2 is exhibited, the te is a time in which characteristic absorption band absorbance peak value A0 becomes '0' to indicate a just etching time. Accordingly, the optimum etching time of the film 2 is obtained by adding a suitable overetching time to the te.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23012187A JPS6473621A (en) | 1987-09-14 | 1987-09-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23012187A JPS6473621A (en) | 1987-09-14 | 1987-09-14 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6473621A true JPS6473621A (en) | 1989-03-17 |
Family
ID=16902896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23012187A Pending JPS6473621A (en) | 1987-09-14 | 1987-09-14 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6473621A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010141193A (en) * | 2008-12-12 | 2010-06-24 | Seiko Epson Corp | Plasma processing apparatus |
| US7759136B2 (en) * | 2006-03-29 | 2010-07-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Critical dimension (CD) control by spectrum metrology |
| CN110530825A (en) * | 2018-05-23 | 2019-12-03 | 亚智科技股份有限公司 | Etching period method for detecting and etching period detecting system |
-
1987
- 1987-09-14 JP JP23012187A patent/JPS6473621A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7759136B2 (en) * | 2006-03-29 | 2010-07-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Critical dimension (CD) control by spectrum metrology |
| JP2010141193A (en) * | 2008-12-12 | 2010-06-24 | Seiko Epson Corp | Plasma processing apparatus |
| CN110530825A (en) * | 2018-05-23 | 2019-12-03 | 亚智科技股份有限公司 | Etching period method for detecting and etching period detecting system |
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