JPS5642347A - Passivation of surface of compound semiconductor - Google Patents

Passivation of surface of compound semiconductor

Info

Publication number
JPS5642347A
JPS5642347A JP11735679A JP11735679A JPS5642347A JP S5642347 A JPS5642347 A JP S5642347A JP 11735679 A JP11735679 A JP 11735679A JP 11735679 A JP11735679 A JP 11735679A JP S5642347 A JPS5642347 A JP S5642347A
Authority
JP
Japan
Prior art keywords
light
intensity
compound semiconductor
laser light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11735679A
Other languages
Japanese (ja)
Inventor
Mitsuo Fukuda
Koichi Wakita
Yoshinori Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11735679A priority Critical patent/JPS5642347A/en
Publication of JPS5642347A publication Critical patent/JPS5642347A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To passivate the surface of the compound semiconductor by irradiating a light having an opaque wavelength for the semiconductor in an intensity of 0.5- 1kw/cm<2> on the surface of the semiconductor. CONSTITUTION:An Ar laser light (having a wavelength of 5,149Angstrom ) is condensed through a lens to provide an intensity of 0.5-1kw/cm<2>, and the condensed laser light is irradiated on the light resonant surface of a laser diode having a double hetero junction of A GaAs-GaAs series. If the intensity of the laser light is lower than the prescribed range, no effect can be obtained, while if the intensity is higher than the prescribed range, the surface of a specimen is damaged. If the laser light is irradiated for shorter than one minute, no effect can be obtained. With such a treatment a stable oxide film is formed on the surface of a light resonator, and the surface of the resonator is annealed by a light absorption to be stabilized. In such a configuration the surface of the compound semiconductor can be simply passivated, and the reliability of the compound semiconductor can be consequently improved.
JP11735679A 1979-09-14 1979-09-14 Passivation of surface of compound semiconductor Pending JPS5642347A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11735679A JPS5642347A (en) 1979-09-14 1979-09-14 Passivation of surface of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11735679A JPS5642347A (en) 1979-09-14 1979-09-14 Passivation of surface of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5642347A true JPS5642347A (en) 1981-04-20

Family

ID=14709651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11735679A Pending JPS5642347A (en) 1979-09-14 1979-09-14 Passivation of surface of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5642347A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948977A (en) * 1982-09-14 1984-03-21 Nec Corp Manufacture of laser diode
CN115841969A (en) * 2022-12-12 2023-03-24 江苏宜兴德融科技有限公司 Semiconductor device laser passivation equipment and passivation method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421172A (en) * 1977-07-18 1979-02-17 Nec Corp Manufacture for semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421172A (en) * 1977-07-18 1979-02-17 Nec Corp Manufacture for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948977A (en) * 1982-09-14 1984-03-21 Nec Corp Manufacture of laser diode
CN115841969A (en) * 2022-12-12 2023-03-24 江苏宜兴德融科技有限公司 Semiconductor device laser passivation equipment and passivation method
CN115841969B (en) * 2022-12-12 2023-09-08 江苏宜兴德融科技有限公司 Laser passivation equipment and passivation method for semiconductor device

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