JPS55130142A - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device

Info

Publication number
JPS55130142A
JPS55130142A JP3822379A JP3822379A JPS55130142A JP S55130142 A JPS55130142 A JP S55130142A JP 3822379 A JP3822379 A JP 3822379A JP 3822379 A JP3822379 A JP 3822379A JP S55130142 A JPS55130142 A JP S55130142A
Authority
JP
Japan
Prior art keywords
hole
laser
film
semiconductor device
vicinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3822379A
Other languages
Japanese (ja)
Inventor
Mikio Takagi
Haruo Shimoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3822379A priority Critical patent/JPS55130142A/en
Publication of JPS55130142A publication Critical patent/JPS55130142A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To fabricate a semiconductor device in high reliability and yield by irradiating a laser light of long wavelength to the vicinity of an impurity containing glass film including contact hole to melt and soften the film and forming round edge of the contact hole. CONSTITUTION:A second PSG insulating film 4 is grown, then patterned, and formed with a through hole 4A thereat. A laser light of long wavelength such as CO2 laser is suitably focused and irradiated only to the vicinity of the through hole 4A. The light by the CO2 laser is absorbed by approx. 70% to a PSG, but almost reflected by 100% by aluminum. Therefore, the film 4 is molten and softened only at the periphery of the through hole 4A, and roundness is formed at the edge.
JP3822379A 1979-03-30 1979-03-30 Fabricating method of semiconductor device Pending JPS55130142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3822379A JPS55130142A (en) 1979-03-30 1979-03-30 Fabricating method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3822379A JPS55130142A (en) 1979-03-30 1979-03-30 Fabricating method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55130142A true JPS55130142A (en) 1980-10-08

Family

ID=12519297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3822379A Pending JPS55130142A (en) 1979-03-30 1979-03-30 Fabricating method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55130142A (en)

Similar Documents

Publication Publication Date Title
EP0207528A3 (en) Photomask and production process
JPS55130142A (en) Fabricating method of semiconductor device
JPS5333050A (en) Production of semiconductor element
JPS5228338A (en) High output light beam focusing lens system
JPS5280779A (en) Production of simiconductor device
JPS546768A (en) Manufacture of semiconductor device
JPS5570492A (en) Fusion-cutting method of silicon steel plates
JPS5662334A (en) Production of semiconductor
JPS5763625A (en) Heat treatment device for surface using laser
JPS6229894B2 (en)
IE44037L (en) 1, 2, 4-oxadiazines
GB2108129B (en) Preparation of fluorine-containing compound having carboxyl group
JPS5642347A (en) Passivation of surface of compound semiconductor
KR910007070A (en) Method for suppressing dislocation generation of dendritic silicon web
JPS55132045A (en) Nitride film forming method
JPS53105964A (en) Manufacture of semiconductor device
JPS5232698A (en) Laser light scanning equipment
JPS5432335A (en) Method and apparatus for welding of optical parts
JPS5662203A (en) Submerged light reflecting mirror apparatus
SU1109159A1 (en) Method of marking the optical center of cornea
JPS5367447A (en) Production of optical fiber base material
JPS6453794A (en) Optical lens for large output laser
JPS55115364A (en) Manufacturing method of semiconductor device
JPS5327448A (en) Thi ckness detector for running body
JPS6450475A (en) Manufacture of thin film solar cell