JPS5662334A - Production of semiconductor - Google Patents

Production of semiconductor

Info

Publication number
JPS5662334A
JPS5662334A JP13832579A JP13832579A JPS5662334A JP S5662334 A JPS5662334 A JP S5662334A JP 13832579 A JP13832579 A JP 13832579A JP 13832579 A JP13832579 A JP 13832579A JP S5662334 A JPS5662334 A JP S5662334A
Authority
JP
Japan
Prior art keywords
burring
groove
aluminum film
scribing
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13832579A
Other languages
Japanese (ja)
Inventor
Takumi Matsukura
Nobuyuki Yamamichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13832579A priority Critical patent/JPS5662334A/en
Publication of JPS5662334A publication Critical patent/JPS5662334A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent contact of a fine metal line with a burring of an aluminum film developed about a scribe groove in bonding by fusing it to lower property through the irradiation of a laser beam. CONSTITUTION:After a semicondcutor element (not illustrated) is formed on the surface, a wafer 10 having an aluminum film 1 in a scribe region is set on a dicing saw device and a groove is formed in the scribe region by scribing with a blade 2. During the scribing, burring 3 of the aluminum film is developed at both ends of the scribed groove. Then, the wafer 10 is placed on a laser device 4 and a laser beam 5 is irradiated in the region including the burring 3 of the film. As a result, once fused, the burring 3 thereof makes a convex section 3' extremely gentle in the shape.
JP13832579A 1979-10-26 1979-10-26 Production of semiconductor Pending JPS5662334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13832579A JPS5662334A (en) 1979-10-26 1979-10-26 Production of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13832579A JPS5662334A (en) 1979-10-26 1979-10-26 Production of semiconductor

Publications (1)

Publication Number Publication Date
JPS5662334A true JPS5662334A (en) 1981-05-28

Family

ID=15219258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13832579A Pending JPS5662334A (en) 1979-10-26 1979-10-26 Production of semiconductor

Country Status (1)

Country Link
JP (1) JPS5662334A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0343720A2 (en) * 1988-05-23 1989-11-29 Koninklijke Philips Electronics N.V. Semiconductor wafer and method of dividing it
WO1998013862A1 (en) * 1996-09-24 1998-04-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and production method thereof
KR100686810B1 (en) * 2001-04-27 2007-02-23 앰코 테크놀로지 코리아 주식회사 Wafer sawing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0343720A2 (en) * 1988-05-23 1989-11-29 Koninklijke Philips Electronics N.V. Semiconductor wafer and method of dividing it
WO1998013862A1 (en) * 1996-09-24 1998-04-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and production method thereof
US6136668A (en) * 1996-09-24 2000-10-24 Mitsubishi Denki Kabushiki Kaisha Method of dicing semiconductor wafer
US6329671B1 (en) 1996-09-24 2001-12-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
JP3662260B2 (en) * 1996-09-24 2005-06-22 三菱電機株式会社 Semiconductor device and manufacturing method thereof
KR100686810B1 (en) * 2001-04-27 2007-02-23 앰코 테크놀로지 코리아 주식회사 Wafer sawing method

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