JPS5574447A - Method of measuring impurity concentration distribution of semiconductor wafer - Google Patents

Method of measuring impurity concentration distribution of semiconductor wafer

Info

Publication number
JPS5574447A
JPS5574447A JP14775678A JP14775678A JPS5574447A JP S5574447 A JPS5574447 A JP S5574447A JP 14775678 A JP14775678 A JP 14775678A JP 14775678 A JP14775678 A JP 14775678A JP S5574447 A JPS5574447 A JP S5574447A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
light
absorption coefficient
wafer
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14775678A
Other languages
Japanese (ja)
Inventor
Kuninori Kitahara
Akira Osawa
Koichiro Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14775678A priority Critical patent/JPS5574447A/en
Publication of JPS5574447A publication Critical patent/JPS5574447A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To rapidly measure the distribution of the impurities concentration of a semiconductor wafer in high resolution, by focussing light with a wavelength properly selected, by irradiating the light to the semiconductor wafer, and by measuring an absorption coefficient of the semiconductor wafer while relatively moving the luminous flux of the light and the semiconductor wafer. CONSTITUTION:Light with a specified wavelength is generated by means of a luminous diode or a laser diode 1, the light is irradiated to a sample wafer 8 through a optical-fiber 2 with a condenser, and the intensity of transmitted light is measured by means of a photo-detector 3. Signals from the photo-detector 3 are amplified by means of an amplifier, converted into an absorption coefficient and recorded by means of a recorder. The change of the absorption coefficient in the whole or a fixed region of the sample wafer 8 can be measured by moving the sample wafer 8 by means of a driving gear 6.
JP14775678A 1978-12-01 1978-12-01 Method of measuring impurity concentration distribution of semiconductor wafer Pending JPS5574447A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14775678A JPS5574447A (en) 1978-12-01 1978-12-01 Method of measuring impurity concentration distribution of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14775678A JPS5574447A (en) 1978-12-01 1978-12-01 Method of measuring impurity concentration distribution of semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5574447A true JPS5574447A (en) 1980-06-05

Family

ID=15437436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14775678A Pending JPS5574447A (en) 1978-12-01 1978-12-01 Method of measuring impurity concentration distribution of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5574447A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732645A (en) * 1980-08-06 1982-02-22 Funakoshi Yakuhin Kk Surface inspection lamp for etching circuit blank

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52126165A (en) * 1976-04-15 1977-10-22 Fujitsu Ltd Measurement of crystal properties

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52126165A (en) * 1976-04-15 1977-10-22 Fujitsu Ltd Measurement of crystal properties

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5732645A (en) * 1980-08-06 1982-02-22 Funakoshi Yakuhin Kk Surface inspection lamp for etching circuit blank

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