JPS5694242A - Measuring method for concentration of impurity in semiconductor - Google Patents

Measuring method for concentration of impurity in semiconductor

Info

Publication number
JPS5694242A
JPS5694242A JP17103679A JP17103679A JPS5694242A JP S5694242 A JPS5694242 A JP S5694242A JP 17103679 A JP17103679 A JP 17103679A JP 17103679 A JP17103679 A JP 17103679A JP S5694242 A JPS5694242 A JP S5694242A
Authority
JP
Japan
Prior art keywords
impurity
semiconductor
concentration
measuring method
concn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17103679A
Other languages
Japanese (ja)
Inventor
Koichiro Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17103679A priority Critical patent/JPS5694242A/en
Publication of JPS5694242A publication Critical patent/JPS5694242A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To simply measure the average of concn. of oxygen in a silicon wafer with accuracy by irradiating the wafer with infrared rays and detecting the absorption intensity at a specified wavelength. CONSTITUTION:A silicon wafer is irradiated with infrared rays, and the average of concn. of oxygen in the wafer is measured from the absorption wavelengths of the rays and the absorption intensity. In this case, the oxygen concn. is obtd. from the absorption intensity at 19.5mum.
JP17103679A 1979-12-28 1979-12-28 Measuring method for concentration of impurity in semiconductor Pending JPS5694242A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17103679A JPS5694242A (en) 1979-12-28 1979-12-28 Measuring method for concentration of impurity in semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17103679A JPS5694242A (en) 1979-12-28 1979-12-28 Measuring method for concentration of impurity in semiconductor

Publications (1)

Publication Number Publication Date
JPS5694242A true JPS5694242A (en) 1981-07-30

Family

ID=15915893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17103679A Pending JPS5694242A (en) 1979-12-28 1979-12-28 Measuring method for concentration of impurity in semiconductor

Country Status (1)

Country Link
JP (1) JPS5694242A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116515A (en) * 1982-12-24 1984-07-05 Hitachi Ltd Method for measuring polarized light transmitting infrared absorbing spectrum
JPS62130341A (en) * 1985-12-03 1987-06-12 Matsushita Electronics Corp Method for measuring concentration of oxygen in polycrystalline silicon film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116515A (en) * 1982-12-24 1984-07-05 Hitachi Ltd Method for measuring polarized light transmitting infrared absorbing spectrum
JPS62130341A (en) * 1985-12-03 1987-06-12 Matsushita Electronics Corp Method for measuring concentration of oxygen in polycrystalline silicon film

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