JPS56103351A - Method for measuring impurity concentration of semiconductor - Google Patents

Method for measuring impurity concentration of semiconductor

Info

Publication number
JPS56103351A
JPS56103351A JP599180A JP599180A JPS56103351A JP S56103351 A JPS56103351 A JP S56103351A JP 599180 A JP599180 A JP 599180A JP 599180 A JP599180 A JP 599180A JP S56103351 A JPS56103351 A JP S56103351A
Authority
JP
Japan
Prior art keywords
wafer
light
semiconductor
impurity concentration
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP599180A
Other languages
Japanese (ja)
Other versions
JPS6123495B2 (en
Inventor
Akira Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP599180A priority Critical patent/JPS56103351A/en
Publication of JPS56103351A publication Critical patent/JPS56103351A/en
Publication of JPS6123495B2 publication Critical patent/JPS6123495B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59—Transmissivity
    • G01N21/5907—Densitometers

Abstract

PURPOSE:To measure the oxygen and carbon distributions of Czochralski crystals with good accuracy without any light interference by setting the incident angles of a light beam to a wafer at specific angles. CONSTITUTION:A spotlike laser beam 22 having a predetermined wavelength is irradiated to a wafer 21, and while this wafer 21 and the laser beam 22 are being relatively moved, the distribution of light absorption coefficients is measured, whereby the two-dimensional distributions of the impurities in the water 21 are measured. At this time, the measurement is made at the incident angles of the light beam 22 to the water 21 up to 10 deg. by shifting the incident angle from 0. The effect of light interference is suppressed by this method.
JP599180A 1980-01-22 1980-01-22 Method for measuring impurity concentration of semiconductor Granted JPS56103351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP599180A JPS56103351A (en) 1980-01-22 1980-01-22 Method for measuring impurity concentration of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP599180A JPS56103351A (en) 1980-01-22 1980-01-22 Method for measuring impurity concentration of semiconductor

Publications (2)

Publication Number Publication Date
JPS56103351A true JPS56103351A (en) 1981-08-18
JPS6123495B2 JPS6123495B2 (en) 1986-06-06

Family

ID=11626251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP599180A Granted JPS56103351A (en) 1980-01-22 1980-01-22 Method for measuring impurity concentration of semiconductor

Country Status (1)

Country Link
JP (1) JPS56103351A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116515A (en) * 1982-12-24 1984-07-05 Hitachi Ltd Method for measuring polarized light transmitting infrared absorbing spectrum

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5483371A (en) * 1977-12-16 1979-07-03 Fujitsu Ltd Measurement method of impurity concentration of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5483371A (en) * 1977-12-16 1979-07-03 Fujitsu Ltd Measurement method of impurity concentration of semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116515A (en) * 1982-12-24 1984-07-05 Hitachi Ltd Method for measuring polarized light transmitting infrared absorbing spectrum

Also Published As

Publication number Publication date
JPS6123495B2 (en) 1986-06-06

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