JPS5483371A - Measurement method of impurity concentration of semiconductor - Google Patents

Measurement method of impurity concentration of semiconductor

Info

Publication number
JPS5483371A
JPS5483371A JP15057977A JP15057977A JPS5483371A JP S5483371 A JPS5483371 A JP S5483371A JP 15057977 A JP15057977 A JP 15057977A JP 15057977 A JP15057977 A JP 15057977A JP S5483371 A JPS5483371 A JP S5483371A
Authority
JP
Japan
Prior art keywords
wafer
measured
distribution
xsnxte
dimensionally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15057977A
Other languages
Japanese (ja)
Other versions
JPS6127904B2 (en
Inventor
Akira Osawa
Koichiro Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15057977A priority Critical patent/JPS5483371A/en
Publication of JPS5483371A publication Critical patent/JPS5483371A/en
Publication of JPS6127904B2 publication Critical patent/JPS6127904B2/ja
Granted legal-status Critical Current

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  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To fix securely the wave-length of the laser beam to the maximum absorption wave-length and measure the two-dimensional distribution of O or C in the Si wafer. CONSTITUTION:Pb1-xSnxTe is used as a light source, the laser beam is diffracted spectrally 5 into 9 mu for measuring the O distribution and 16.5 mu for the C distribution, and the beam diameter is narrowed down to 20 to 30 mu. In the plane vertical to the optical axis of the beam, the Si wafer is automatically moved two-dimensionally and the transmitted beam is measured. In this way, the absorption coefficient of O or C which lies in the micro-region of about 1 to 10<6> mu<2> of the wafer can be accurately and quickly measured and thus concentration can be measured. Pb1-xSnxTe(x=0.1 to 0.2) laser 1 is housed in cryostat 2 and maintained at a temperature of about 77 deg.K. From power source 3, a constant current of 0.1 to 0.3A is supplied to perform current sweeping within the range of + or -500 mA with the constant current value as a center, and sample 8 is moved two-dimensionally at an interval of 30 mu.
JP15057977A 1977-12-16 1977-12-16 Measurement method of impurity concentration of semiconductor Granted JPS5483371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15057977A JPS5483371A (en) 1977-12-16 1977-12-16 Measurement method of impurity concentration of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15057977A JPS5483371A (en) 1977-12-16 1977-12-16 Measurement method of impurity concentration of semiconductor

Publications (2)

Publication Number Publication Date
JPS5483371A true JPS5483371A (en) 1979-07-03
JPS6127904B2 JPS6127904B2 (en) 1986-06-27

Family

ID=15499959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15057977A Granted JPS5483371A (en) 1977-12-16 1977-12-16 Measurement method of impurity concentration of semiconductor

Country Status (1)

Country Link
JP (1) JPS5483371A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103351A (en) * 1980-01-22 1981-08-18 Fujitsu Ltd Method for measuring impurity concentration of semiconductor
JPS59116038A (en) * 1982-12-22 1984-07-04 Taizo Ishikawa Method for flaw detection using monochromatic light source
GB2550897A (en) * 2016-05-27 2017-12-06 Oxford Instruments Nanotechnology Tools Ltd Cryogenic cooling system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4952979A (en) * 1972-07-03 1974-05-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4952979A (en) * 1972-07-03 1974-05-23

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103351A (en) * 1980-01-22 1981-08-18 Fujitsu Ltd Method for measuring impurity concentration of semiconductor
JPS6123495B2 (en) * 1980-01-22 1986-06-06 Fujitsu Ltd
JPS59116038A (en) * 1982-12-22 1984-07-04 Taizo Ishikawa Method for flaw detection using monochromatic light source
GB2550897A (en) * 2016-05-27 2017-12-06 Oxford Instruments Nanotechnology Tools Ltd Cryogenic cooling system
GB2550897B (en) * 2016-05-27 2020-12-23 Oxford Instruments Nanotechnology Tools Ltd Cryogenic cooling system

Also Published As

Publication number Publication date
JPS6127904B2 (en) 1986-06-27

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