JPS5483371A - Measurement method of impurity concentration of semiconductor - Google Patents
Measurement method of impurity concentration of semiconductorInfo
- Publication number
- JPS5483371A JPS5483371A JP15057977A JP15057977A JPS5483371A JP S5483371 A JPS5483371 A JP S5483371A JP 15057977 A JP15057977 A JP 15057977A JP 15057977 A JP15057977 A JP 15057977A JP S5483371 A JPS5483371 A JP S5483371A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- measured
- distribution
- xsnxte
- dimensionally
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To fix securely the wave-length of the laser beam to the maximum absorption wave-length and measure the two-dimensional distribution of O or C in the Si wafer. CONSTITUTION:Pb1-xSnxTe is used as a light source, the laser beam is diffracted spectrally 5 into 9 mu for measuring the O distribution and 16.5 mu for the C distribution, and the beam diameter is narrowed down to 20 to 30 mu. In the plane vertical to the optical axis of the beam, the Si wafer is automatically moved two-dimensionally and the transmitted beam is measured. In this way, the absorption coefficient of O or C which lies in the micro-region of about 1 to 10<6> mu<2> of the wafer can be accurately and quickly measured and thus concentration can be measured. Pb1-xSnxTe(x=0.1 to 0.2) laser 1 is housed in cryostat 2 and maintained at a temperature of about 77 deg.K. From power source 3, a constant current of 0.1 to 0.3A is supplied to perform current sweeping within the range of + or -500 mA with the constant current value as a center, and sample 8 is moved two-dimensionally at an interval of 30 mu.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15057977A JPS5483371A (en) | 1977-12-16 | 1977-12-16 | Measurement method of impurity concentration of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15057977A JPS5483371A (en) | 1977-12-16 | 1977-12-16 | Measurement method of impurity concentration of semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5483371A true JPS5483371A (en) | 1979-07-03 |
JPS6127904B2 JPS6127904B2 (en) | 1986-06-27 |
Family
ID=15499959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15057977A Granted JPS5483371A (en) | 1977-12-16 | 1977-12-16 | Measurement method of impurity concentration of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5483371A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56103351A (en) * | 1980-01-22 | 1981-08-18 | Fujitsu Ltd | Method for measuring impurity concentration of semiconductor |
JPS59116038A (en) * | 1982-12-22 | 1984-07-04 | Taizo Ishikawa | Method for flaw detection using monochromatic light source |
GB2550897A (en) * | 2016-05-27 | 2017-12-06 | Oxford Instruments Nanotechnology Tools Ltd | Cryogenic cooling system |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4952979A (en) * | 1972-07-03 | 1974-05-23 |
-
1977
- 1977-12-16 JP JP15057977A patent/JPS5483371A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4952979A (en) * | 1972-07-03 | 1974-05-23 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56103351A (en) * | 1980-01-22 | 1981-08-18 | Fujitsu Ltd | Method for measuring impurity concentration of semiconductor |
JPS6123495B2 (en) * | 1980-01-22 | 1986-06-06 | Fujitsu Ltd | |
JPS59116038A (en) * | 1982-12-22 | 1984-07-04 | Taizo Ishikawa | Method for flaw detection using monochromatic light source |
GB2550897A (en) * | 2016-05-27 | 2017-12-06 | Oxford Instruments Nanotechnology Tools Ltd | Cryogenic cooling system |
GB2550897B (en) * | 2016-05-27 | 2020-12-23 | Oxford Instruments Nanotechnology Tools Ltd | Cryogenic cooling system |
Also Published As
Publication number | Publication date |
---|---|
JPS6127904B2 (en) | 1986-06-27 |
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