JPS5571934A - Method of evaluating impurity doping amount in semiconductor - Google Patents

Method of evaluating impurity doping amount in semiconductor

Info

Publication number
JPS5571934A
JPS5571934A JP14427678A JP14427678A JPS5571934A JP S5571934 A JPS5571934 A JP S5571934A JP 14427678 A JP14427678 A JP 14427678A JP 14427678 A JP14427678 A JP 14427678A JP S5571934 A JPS5571934 A JP S5571934A
Authority
JP
Japan
Prior art keywords
specimen
flatness
measured
measuring
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14427678A
Other languages
Japanese (ja)
Inventor
Hiroshi Kaneko
Naohiro Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14427678A priority Critical patent/JPS5571934A/en
Publication of JPS5571934A publication Critical patent/JPS5571934A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To obtain accurately measured value in a method of evaluating the doping amount of a semiconductor by means of infrared ray transmission rate by specifying the flatness of the semiconductor substrate in an infrared ray irradiating range as specified value. CONSTITUTION:In an measurement of the doping amount in a semiconductor substrate (specimen 14 to be measured) by the steps of splitting infrared rays from a light source 9 (in degree of approx. 10mu of measuring wavelength) through mirrors 10, 10 to measuring and compensating luminous fluxes 12 and 13, irradiating it through slits 11, 11 to a specimen 14 to be measured and a specimen 15 to be compensated, and detecting the transmitted light via a detector 16, the flatness of an infrared ray irradiating portion 17 (or the surface roughness) is measured as being less than 3mu(preferably 2.5mu). That is, the specimen is measured following the steps of polishing both side surface of the specimen (semiconductor substrate)1 via a rotary spindle 3 provided with polishing cloths 2 to thereby form mirror-polished portions 4 having the above predetermined flatness, doping impurity thereat, and measuring the portions 4 as the portion 17 at measuring time. The flatness of the specimen 15 to be compensated is used as equivalent to the flatness of the portions 4.
JP14427678A 1978-11-24 1978-11-24 Method of evaluating impurity doping amount in semiconductor Pending JPS5571934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14427678A JPS5571934A (en) 1978-11-24 1978-11-24 Method of evaluating impurity doping amount in semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14427678A JPS5571934A (en) 1978-11-24 1978-11-24 Method of evaluating impurity doping amount in semiconductor

Publications (1)

Publication Number Publication Date
JPS5571934A true JPS5571934A (en) 1980-05-30

Family

ID=15358316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14427678A Pending JPS5571934A (en) 1978-11-24 1978-11-24 Method of evaluating impurity doping amount in semiconductor

Country Status (1)

Country Link
JP (1) JPS5571934A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0488652A (en) * 1990-07-31 1992-03-23 Toshiba Ceramics Co Ltd Manufacture of silicon wafer
JPH04106948A (en) * 1990-08-27 1992-04-08 Toshiba Ceramics Co Ltd Manufacture of silicon wafer
JPH04106947A (en) * 1990-08-27 1992-04-08 Toshiba Ceramics Co Ltd Interlattice oxygen concentration measurement of pulled-up silicon wafer
JPH04108693A (en) * 1990-08-29 1992-04-09 Toshiba Ceramics Co Ltd Production of silicon wafer
JPH04108692A (en) * 1990-08-29 1992-04-09 Toshiba Ceramics Co Ltd Production of silicon wafer
JPH04109648A (en) * 1990-08-29 1992-04-10 Toshiba Ceramics Co Ltd Manufacture of silicon wafer
JPH04180644A (en) * 1990-07-31 1992-06-26 Toshiba Ceramics Co Ltd Method of measuring interstitial oxygen concentration of pulled silicon wafer
JPH05243353A (en) * 1992-02-27 1993-09-21 Toshiba Ceramics Co Ltd Measuring method for concentration of interstitial oxygen or substitutional carbon of silicon wafer

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0488652A (en) * 1990-07-31 1992-03-23 Toshiba Ceramics Co Ltd Manufacture of silicon wafer
JPH04180644A (en) * 1990-07-31 1992-06-26 Toshiba Ceramics Co Ltd Method of measuring interstitial oxygen concentration of pulled silicon wafer
JPH04106948A (en) * 1990-08-27 1992-04-08 Toshiba Ceramics Co Ltd Manufacture of silicon wafer
JPH04106947A (en) * 1990-08-27 1992-04-08 Toshiba Ceramics Co Ltd Interlattice oxygen concentration measurement of pulled-up silicon wafer
JPH04108693A (en) * 1990-08-29 1992-04-09 Toshiba Ceramics Co Ltd Production of silicon wafer
JPH04108692A (en) * 1990-08-29 1992-04-09 Toshiba Ceramics Co Ltd Production of silicon wafer
JPH04109648A (en) * 1990-08-29 1992-04-10 Toshiba Ceramics Co Ltd Manufacture of silicon wafer
JPH05243353A (en) * 1992-02-27 1993-09-21 Toshiba Ceramics Co Ltd Measuring method for concentration of interstitial oxygen or substitutional carbon of silicon wafer

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