JPS5712356A - Method for measuring content of oxygen in silicon - Google Patents
Method for measuring content of oxygen in siliconInfo
- Publication number
- JPS5712356A JPS5712356A JP8617280A JP8617280A JPS5712356A JP S5712356 A JPS5712356 A JP S5712356A JP 8617280 A JP8617280 A JP 8617280A JP 8617280 A JP8617280 A JP 8617280A JP S5712356 A JPS5712356 A JP S5712356A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- specific resistance
- content
- silicon
- variation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating And Analyzing Materials By Characteristic Methods (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To simply measure the content of oxygen in silicon wafer, by treating the silicon material at a prescribed temperature and time and utilizing a variation of specific resistance before and after heat treatment. CONSTITUTION:At the time of measuring a very small amount of oxygen in silicon material for semiconductor, for example, a sample cut from silicon wafer is treated in N2 gas atmosphere at 450 deg.C for about 1hr after measuring its specific resistance. The specific resistance is measured again after treatment. Variation of the specific resistance before and after heat treatment is compared with the result measured by the sample containing preliminary known content of oxygen and the content of oxygen is easily measured without the need to use infrared spectrophotometer and to prepare a test piece having a special form. Contained oxygen is made into n type impurity by heating and the concentration of p type or n type impurity containing in silicon is varied and then, the specific resistance is varied. The content of oxygen is simply measured by utilizing said variation of the specific resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8617280A JPS5712356A (en) | 1980-06-25 | 1980-06-25 | Method for measuring content of oxygen in silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8617280A JPS5712356A (en) | 1980-06-25 | 1980-06-25 | Method for measuring content of oxygen in silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5712356A true JPS5712356A (en) | 1982-01-22 |
| JPS647338B2 JPS647338B2 (en) | 1989-02-08 |
Family
ID=13879329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8617280A Granted JPS5712356A (en) | 1980-06-25 | 1980-06-25 | Method for measuring content of oxygen in silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5712356A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103189740A (en) * | 2010-09-02 | 2013-07-03 | 原子能和代替能源委员会 | Method for mapping oxygen concentration |
| CN103620394A (en) * | 2011-04-15 | 2014-03-05 | 原子能和代替能源委员会 | Method for determining interstitial oxygen concentration |
| US20150055677A1 (en) * | 2012-04-06 | 2015-02-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Determination of the interstitial oxygen concentration in a semiconductor sample |
-
1980
- 1980-06-25 JP JP8617280A patent/JPS5712356A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103189740A (en) * | 2010-09-02 | 2013-07-03 | 原子能和代替能源委员会 | Method for mapping oxygen concentration |
| CN103620394A (en) * | 2011-04-15 | 2014-03-05 | 原子能和代替能源委员会 | Method for determining interstitial oxygen concentration |
| US9274072B2 (en) | 2011-04-15 | 2016-03-01 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Method for determining interstitial oxygen concentration |
| US20150055677A1 (en) * | 2012-04-06 | 2015-02-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Determination of the interstitial oxygen concentration in a semiconductor sample |
| US9297774B2 (en) * | 2012-04-06 | 2016-03-29 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Determination of the interstitial oxygen concentration in a semiconductor sample |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS647338B2 (en) | 1989-02-08 |
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