JPS55140275A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPS55140275A JPS55140275A JP4743379A JP4743379A JPS55140275A JP S55140275 A JPS55140275 A JP S55140275A JP 4743379 A JP4743379 A JP 4743379A JP 4743379 A JP4743379 A JP 4743379A JP S55140275 A JPS55140275 A JP S55140275A
- Authority
- JP
- Japan
- Prior art keywords
- region
- opening
- film
- photodetector
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To prevent the deterioration of the frequency response characteristics of a photodetector by forming a light shielding mask film having an opening through an insulating film on an electrode formed on the light receiving area of the photodetector, thereby shielding the incident light unnecessary except from the light receiving region. CONSTITUTION:An n<->-type layer 2 is epitaxially grown on an n<+>-type silicon substrate 1, and an SiO2 protective film 5 having an opening 24 corresponding to the photodetector 4 is coated on the entire surface thereof. Then, a p<+>-type region 3 is duffused in the substrate 1 exposed in the opening 24, and an aluminum electrode 6 extended on the film 5 is mounted in contact with the peripheral edge thereof. A light shielding mask film 22 made of aluminum or the like is coated through an insulating film 21 such as PSG or the like except the opening 24, the opening 24 on the region 3 is retained as it is, and the region 3 is used for the light receiving region. Openings 25 formed by removing the films 22, 21 is perforated partially at the electrode 6 extended on the film 5, used as a bonding region 23. Thus, the light incident except from the predetermined region is completely eliminated to prevent the deterioration of the characteristics of the photodetector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4743379A JPS55140275A (en) | 1979-04-18 | 1979-04-18 | Semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4743379A JPS55140275A (en) | 1979-04-18 | 1979-04-18 | Semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55140275A true JPS55140275A (en) | 1980-11-01 |
Family
ID=12775010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4743379A Pending JPS55140275A (en) | 1979-04-18 | 1979-04-18 | Semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55140275A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0068456A2 (en) * | 1981-07-01 | 1983-01-05 | Honeywell Inc. | Electromagnetic radiation detection system comprising a radiation limiting shield |
| NL9002098A (en) * | 1990-01-25 | 1991-08-16 | Mitsubishi Electric Corp | SEMICONDUCTOR LIGHT DETECTOR DEVICE. |
| JPH03276769A (en) * | 1990-03-27 | 1991-12-06 | Mitsubishi Electric Corp | Semiconductor photodetection device |
| JP2015053415A (en) * | 2013-09-09 | 2015-03-19 | 株式会社東芝 | Photodiode |
-
1979
- 1979-04-18 JP JP4743379A patent/JPS55140275A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0068456A2 (en) * | 1981-07-01 | 1983-01-05 | Honeywell Inc. | Electromagnetic radiation detection system comprising a radiation limiting shield |
| NL9002098A (en) * | 1990-01-25 | 1991-08-16 | Mitsubishi Electric Corp | SEMICONDUCTOR LIGHT DETECTOR DEVICE. |
| JPH03276769A (en) * | 1990-03-27 | 1991-12-06 | Mitsubishi Electric Corp | Semiconductor photodetection device |
| JP2015053415A (en) * | 2013-09-09 | 2015-03-19 | 株式会社東芝 | Photodiode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5710992A (en) | Semiconductor device and manufacture therefor | |
| JPS5548926A (en) | Preparation of semiconductor device | |
| JPS55140275A (en) | Semiconductor photodetector | |
| JPS55141767A (en) | One-dimensional image sensor | |
| JPS5658269A (en) | Mos type semiconductor device | |
| JPS5585082A (en) | Optical semiconductor apparatus | |
| JPS5730381A (en) | Schottky type photodetector | |
| JPS5727078A (en) | Semiconductor device having light receiving element | |
| JPS5552246A (en) | Semiconductor device | |
| JPS55146967A (en) | Semiconductor ic device | |
| JPS53110379A (en) | Optical filter and its manufacture | |
| JPS57145382A (en) | Silicon light receiving device | |
| JPS5313382A (en) | Manufacture of thin-film light electromotive element | |
| JPS56103478A (en) | Semiconductor light receiving element array | |
| JPS55128852A (en) | Insulating type semiconductor device | |
| JPS5331974A (en) | Mask for exposure | |
| JPS55127770A (en) | Solid image pickup device | |
| JPS54133088A (en) | Semiconductor device | |
| JPS56169376A (en) | Light receiving semiconductor device | |
| JPS56104478A (en) | Solid state image pickup element | |
| JPS5745966A (en) | Semiconductor device and manufacture thereof | |
| JPS57124434A (en) | Manufacture of semiconductor device | |
| JPS5773970A (en) | Semiconductor device | |
| JPS5635437A (en) | Manufacturing of semiconductor device | |
| JPS5570845A (en) | Projection type mask transfer method and mask used for said method |