JPS5552246A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5552246A
JPS5552246A JP12657578A JP12657578A JPS5552246A JP S5552246 A JPS5552246 A JP S5552246A JP 12657578 A JP12657578 A JP 12657578A JP 12657578 A JP12657578 A JP 12657578A JP S5552246 A JPS5552246 A JP S5552246A
Authority
JP
Japan
Prior art keywords
region
active region
alpha rays
screen
coming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12657578A
Other languages
Japanese (ja)
Inventor
Takashi Kondo
Satoru Kawazu
Katsuhiko Kawashima
Minoru Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12657578A priority Critical patent/JPS5552246A/en
Publication of JPS5552246A publication Critical patent/JPS5552246A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To provide a semiconductor device in which malfunctions is prevented by mounting an alpha rays absorbing screen on a semiconductor element in adhesive contact to cover all of its active region.
CONSTITUTION: All over an active region 21 of a semiconductor element 2 including its circumferential region 5, a screen 4 composed of a thin piece of single crystal silicon 0.01mm or more thick is placed in adhesive contact with an about 1μm thick passivating film 22 composed of phosphor glass or the like as lying inbetween, thereby to absorb alpha rays and other radiation coming toward the active region 21. In this device, all alpha rays 61 coming toward the active region 21 from right above are absorbed by the screen 4 and all alpha rays 62 coming into at an angle with respect to the active region 21 do not reach the same region because of the screen 4 which is extended over the region 5, while all alpha rays 63 coming from right below are absorbed by the substrate 2 before reaching the region 21.
COPYRIGHT: (C)1980,JPO&Japio
JP12657578A 1978-10-13 1978-10-13 Semiconductor device Pending JPS5552246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12657578A JPS5552246A (en) 1978-10-13 1978-10-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12657578A JPS5552246A (en) 1978-10-13 1978-10-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5552246A true JPS5552246A (en) 1980-04-16

Family

ID=14938552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12657578A Pending JPS5552246A (en) 1978-10-13 1978-10-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5552246A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563850A (en) * 1978-11-08 1980-05-14 Nec Corp Semiconductor device
JPS5588356A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Semiconductor device
JPS55128845A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Semiconductor device
JPS56158467A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Semiconductor device
JPS5753657U (en) * 1980-09-12 1982-03-29

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
16TH ANNUAL PROCEEDINGS OF 1978 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM=1978US *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563850A (en) * 1978-11-08 1980-05-14 Nec Corp Semiconductor device
JPS6315745B2 (en) * 1978-11-08 1988-04-06 Nippon Electric Co
JPS5588356A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Semiconductor device
JPS55128845A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Semiconductor device
JPS56158467A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Semiconductor device
JPS6239820B2 (en) * 1980-05-12 1987-08-25 Mitsubishi Electric Corp
JPS5753657U (en) * 1980-09-12 1982-03-29

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