JPS5773970A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5773970A
JPS5773970A JP55150950A JP15095080A JPS5773970A JP S5773970 A JPS5773970 A JP S5773970A JP 55150950 A JP55150950 A JP 55150950A JP 15095080 A JP15095080 A JP 15095080A JP S5773970 A JPS5773970 A JP S5773970A
Authority
JP
Japan
Prior art keywords
layer
film
covered
metallic layer
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55150950A
Other languages
Japanese (ja)
Inventor
Hiroyuki Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55150950A priority Critical patent/JPS5773970A/en
Publication of JPS5773970A publication Critical patent/JPS5773970A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Abstract

PURPOSE:To effectively exfoliate an element by a PN junction in a semiconductor device by selectively forming the first metallic layer on an insulating film, forming stepwise shape at the film not covered with the layer, and covering the second discontinuous metallic layer from the first layer thereon, thereby completely shielding a light to undesired surface of the device as a whole. CONSTITUTION:An insulating film 19 is covered on a semiconductor substrate 18, the first metallic layer 20, e.g., aluminum or the like is accumulated thereon, and with a resist film 21 having a desired pattern as a mask the layer 20 is etched to metalic layer 22, e.g., aluminum is covered on the overall surface, and is formed cover unnecessary layer 20. Then, the part of the film 19 exposed with the same film 21 is etched to form a recess on the film 19, unnecessary film 21 is removed, the second discontinuously to the recess produced on the film 19 on the first layer 20. In this manner the overall surface of a crystal display panel semiconductor IC is covered with the metallic layer, thereby eliminating the external light reaching the PN junction provided in the IC.
JP55150950A 1980-10-28 1980-10-28 Semiconductor device Pending JPS5773970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150950A JPS5773970A (en) 1980-10-28 1980-10-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150950A JPS5773970A (en) 1980-10-28 1980-10-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5773970A true JPS5773970A (en) 1982-05-08

Family

ID=15507957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150950A Pending JPS5773970A (en) 1980-10-28 1980-10-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5773970A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2557371A1 (en) * 1983-12-27 1985-06-28 Thomson Csf PHOTOSENSITIVE DEVICE COMPRISING BETWEEN THE DETECTORS OF OPAQUE RADIATION AREAS TO BE DETECTED, AND METHOD OF MANUFACTURE
US5238435A (en) * 1987-06-10 1993-08-24 U.S. Philips Corporation Liquid crystal display device and method of manufacturing such a display device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538075A (en) * 1978-09-12 1980-03-17 Fujitsu Ltd Wiring

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538075A (en) * 1978-09-12 1980-03-17 Fujitsu Ltd Wiring

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2557371A1 (en) * 1983-12-27 1985-06-28 Thomson Csf PHOTOSENSITIVE DEVICE COMPRISING BETWEEN THE DETECTORS OF OPAQUE RADIATION AREAS TO BE DETECTED, AND METHOD OF MANUFACTURE
US5238435A (en) * 1987-06-10 1993-08-24 U.S. Philips Corporation Liquid crystal display device and method of manufacturing such a display device

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