JPS54109775A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54109775A JPS54109775A JP1729978A JP1729978A JPS54109775A JP S54109775 A JPS54109775 A JP S54109775A JP 1729978 A JP1729978 A JP 1729978A JP 1729978 A JP1729978 A JP 1729978A JP S54109775 A JPS54109775 A JP S54109775A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- film
- resist pattern
- heat treatment
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To eliminate the pinholes occurring at the pattern edge by forming the photo resist pattern on the semiconductor substrate and then softening the pattern, and thus to avoid the short circuit between the electrodes for the high-density IC as well as to obtain the micropattern in a high yield.
CONSTITUTION: The areas excluding the electrode wiring forming region on the surface of Si substrate 31 is covered with 1st photo resist pattern 33, thus ensuring a short-time heat treatment at the temperature higher than the softening point of the resist. As a result, the edge of pattern 33 is tilted by heat and then Al film 35 is deposited on the entire surface. Thus, Al film 35a1 and 35a2 are formed between patterns 33 to be used as the wiring later, and Al film 35c and 35b are formed at the tilted side surface and the upper surface respectively. In this case, the solvent in pattern 33 is almost evaporated by the previous heat treatment, so no pinhole is caused to Al film 35. After this, 2nd resist pattern 36 which is reverse to pattern 33 is formed to be used as the mask to etch off the exposed part of film 35, thus only film 35a1 and 35a2 remaining.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1729978A JPS54109775A (en) | 1978-02-16 | 1978-02-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1729978A JPS54109775A (en) | 1978-02-16 | 1978-02-16 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54109775A true JPS54109775A (en) | 1979-08-28 |
JPS6217373B2 JPS6217373B2 (en) | 1987-04-17 |
Family
ID=11940116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1729978A Granted JPS54109775A (en) | 1978-02-16 | 1978-02-16 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54109775A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60140735A (en) * | 1983-12-28 | 1985-07-25 | Fujitsu Ltd | Manufacture of semiconductor device |
US6177337B1 (en) | 1998-01-06 | 2001-01-23 | International Business Machines Corporation | Method of reducing metal voids in semiconductor device interconnection |
-
1978
- 1978-02-16 JP JP1729978A patent/JPS54109775A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60140735A (en) * | 1983-12-28 | 1985-07-25 | Fujitsu Ltd | Manufacture of semiconductor device |
US6177337B1 (en) | 1998-01-06 | 2001-01-23 | International Business Machines Corporation | Method of reducing metal voids in semiconductor device interconnection |
Also Published As
Publication number | Publication date |
---|---|
JPS6217373B2 (en) | 1987-04-17 |
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