JPS5318981A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5318981A
JPS5318981A JP9385776A JP9385776A JPS5318981A JP S5318981 A JPS5318981 A JP S5318981A JP 9385776 A JP9385776 A JP 9385776A JP 9385776 A JP9385776 A JP 9385776A JP S5318981 A JPS5318981 A JP S5318981A
Authority
JP
Japan
Prior art keywords
type well
boron atom
production
semiconductor device
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9385776A
Other languages
Japanese (ja)
Other versions
JPS6032990B2 (en
Inventor
Sokichi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP51093857A priority Critical patent/JPS6032990B2/en
Publication of JPS5318981A publication Critical patent/JPS5318981A/en
Publication of JPS6032990B2 publication Critical patent/JPS6032990B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a C-MOS free from wiring disconnection and uneven etching of oxide film by providing a P type well region forming boron atom layer over the entire surface of a semiconductor substrate and etching entire part of this layer except P type well regions deeper than the boron atom layer using the resist patterns provided in the required regions thereon as a mask.
JP51093857A 1976-08-05 1976-08-05 Manufacturing method of semiconductor device Expired JPS6032990B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51093857A JPS6032990B2 (en) 1976-08-05 1976-08-05 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51093857A JPS6032990B2 (en) 1976-08-05 1976-08-05 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5318981A true JPS5318981A (en) 1978-02-21
JPS6032990B2 JPS6032990B2 (en) 1985-07-31

Family

ID=14094085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51093857A Expired JPS6032990B2 (en) 1976-08-05 1976-08-05 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6032990B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249360A (en) * 1984-05-24 1985-12-10 Seiko Instr & Electronics Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249360A (en) * 1984-05-24 1985-12-10 Seiko Instr & Electronics Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6032990B2 (en) 1985-07-31

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