JPS5255386A - Production of semiconductor integrated circuit - Google Patents

Production of semiconductor integrated circuit

Info

Publication number
JPS5255386A
JPS5255386A JP50130916A JP13091675A JPS5255386A JP S5255386 A JPS5255386 A JP S5255386A JP 50130916 A JP50130916 A JP 50130916A JP 13091675 A JP13091675 A JP 13091675A JP S5255386 A JPS5255386 A JP S5255386A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
semiconductor integrated
substrate
rear surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50130916A
Other languages
Japanese (ja)
Other versions
JPS6051275B2 (en
Inventor
Noboru Motai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP50130916A priority Critical patent/JPS6051275B2/en
Publication of JPS5255386A publication Critical patent/JPS5255386A/en
Publication of JPS6051275B2 publication Critical patent/JPS6051275B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a process for production of a semiconductor integrated circuit that can reduce the number of production steps by forming a film impervious to an etching solution on the rear surface of a substrate at the time of removing an impurity doping mask layer.
JP50130916A 1975-10-30 1975-10-30 Manufacturing method of semiconductor device Expired JPS6051275B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50130916A JPS6051275B2 (en) 1975-10-30 1975-10-30 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50130916A JPS6051275B2 (en) 1975-10-30 1975-10-30 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5255386A true JPS5255386A (en) 1977-05-06
JPS6051275B2 JPS6051275B2 (en) 1985-11-13

Family

ID=15045725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50130916A Expired JPS6051275B2 (en) 1975-10-30 1975-10-30 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6051275B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630766A (en) * 1979-08-20 1981-03-27 Gen Instrument Corp Method of manufacturing semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4863683A (en) * 1971-12-07 1973-09-04
JPS4998182A (en) * 1973-01-19 1974-09-17
JPS5017182A (en) * 1973-06-13 1975-02-22

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4863683A (en) * 1971-12-07 1973-09-04
JPS4998182A (en) * 1973-01-19 1974-09-17
JPS5017182A (en) * 1973-06-13 1975-02-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630766A (en) * 1979-08-20 1981-03-27 Gen Instrument Corp Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS6051275B2 (en) 1985-11-13

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