JPS5727078A - Semiconductor device having light receiving element - Google Patents
Semiconductor device having light receiving elementInfo
- Publication number
- JPS5727078A JPS5727078A JP10229280A JP10229280A JPS5727078A JP S5727078 A JPS5727078 A JP S5727078A JP 10229280 A JP10229280 A JP 10229280A JP 10229280 A JP10229280 A JP 10229280A JP S5727078 A JPS5727078 A JP S5727078A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- light
- receiving element
- layer
- peripheral circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- 230000002093 peripheral effect Effects 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000012216 screening Methods 0.000 abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To enhance the mounting density by forming the light receiving element and a peripheral circuit element on the same substrate, coating the light receiving part by a light transmitting layer, and coating the peripheral circuit element by a light screening layer. CONSTITUTION:On a silicon wafer 10, are formed an impurity layer 11 constituting the light receiving element and an impurity layer 12 consituting an amplifier circuit which is the peripheral circuit element for the light receiving element. On the exposed surface of the impurity layer 11 constituting the light receiving element, is formed the light transmitting layer 19 comprising a low temperature oxide film having light transmitting property such as phosphoric and silicic acid glass. on the surface of said light transmitting layer 19, is formed the light screening layer 20 which does not pass the light such as aluminum, except the region which corresponds to a light receiving part 23 of said light receiving element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10229280A JPS5727078A (en) | 1980-07-25 | 1980-07-25 | Semiconductor device having light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10229280A JPS5727078A (en) | 1980-07-25 | 1980-07-25 | Semiconductor device having light receiving element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5727078A true JPS5727078A (en) | 1982-02-13 |
Family
ID=14323529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10229280A Pending JPS5727078A (en) | 1980-07-25 | 1980-07-25 | Semiconductor device having light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5727078A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6365253U (en) * | 1986-10-20 | 1988-04-30 | ||
| JPH05167412A (en) * | 1991-12-12 | 1993-07-02 | Matsushita Electric Works Ltd | Semiconductor relay circuit |
| EP0756333A3 (en) * | 1995-07-24 | 1998-06-10 | Sharp Kabushiki Kaisha | Photodetector element containing circuit element and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52137922A (en) * | 1976-05-13 | 1977-11-17 | Matsushita Electric Ind Co Ltd | Solid photographing device |
-
1980
- 1980-07-25 JP JP10229280A patent/JPS5727078A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52137922A (en) * | 1976-05-13 | 1977-11-17 | Matsushita Electric Ind Co Ltd | Solid photographing device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6365253U (en) * | 1986-10-20 | 1988-04-30 | ||
| JPH05167412A (en) * | 1991-12-12 | 1993-07-02 | Matsushita Electric Works Ltd | Semiconductor relay circuit |
| EP0756333A3 (en) * | 1995-07-24 | 1998-06-10 | Sharp Kabushiki Kaisha | Photodetector element containing circuit element and manufacturing method thereof |
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