JPS5747874A - Detection of end point of dry etching reaction - Google Patents
Detection of end point of dry etching reactionInfo
- Publication number
- JPS5747874A JPS5747874A JP12156680A JP12156680A JPS5747874A JP S5747874 A JPS5747874 A JP S5747874A JP 12156680 A JP12156680 A JP 12156680A JP 12156680 A JP12156680 A JP 12156680A JP S5747874 A JPS5747874 A JP S5747874A
- Authority
- JP
- Japan
- Prior art keywords
- end point
- reaction
- plasma
- detected
- wavelength region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To easily detect the end point of reaction with good accuracy by selectively monitoring the specific wavelength region out of the plasma light emission of CO at the time of etching SiO2 or phosphosilicate glass by CxHyFz or CxFy.
CONSTITUTION: CO is produced by the reaction of CxHyFz or CxFy and, for example, SiO2 to plasma and the plasma light of a specific wavelength range is generated. If this is kept monitored and the point of the time when it decreases is detected, the end point or reaction can be detected. When this wavelength range is not overlapped with each of active materials of CxFy, etc., the end point of reaction can be detected by noticing the wavelength region of any of the characteristic spectra of CO. Further, the high polymer having -CFn- as its unit is produced and sticks on the inside surface of a plasma light transmission window, and therefore the wavelength must be such that it is not absorbed by this. Since the plasma spectral wavelength region of CO is ≥450nm, this is convenient in terms of this.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12156680A JPS5747874A (en) | 1980-09-02 | 1980-09-02 | Detection of end point of dry etching reaction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12156680A JPS5747874A (en) | 1980-09-02 | 1980-09-02 | Detection of end point of dry etching reaction |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5747874A true JPS5747874A (en) | 1982-03-18 |
JPS5752421B2 JPS5752421B2 (en) | 1982-11-08 |
Family
ID=14814399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12156680A Granted JPS5747874A (en) | 1980-09-02 | 1980-09-02 | Detection of end point of dry etching reaction |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5747874A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57148349A (en) * | 1981-03-11 | 1982-09-13 | Hitachi Ltd | Monitoring method for dry etching of silicon oxide |
JPS5945946A (en) * | 1982-09-06 | 1984-03-15 | Toyota Central Res & Dev Lab Inc | Manufacture of porous hollow glass fiber |
US4482424A (en) * | 1983-05-06 | 1984-11-13 | At&T Bell Laboratories | Method for monitoring etching of resists by monitoring the flouresence of the unetched material |
JPS63107026A (en) * | 1986-10-23 | 1988-05-12 | Tokuda Seisakusho Ltd | Plasma etching device |
-
1980
- 1980-09-02 JP JP12156680A patent/JPS5747874A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57148349A (en) * | 1981-03-11 | 1982-09-13 | Hitachi Ltd | Monitoring method for dry etching of silicon oxide |
JPS5945946A (en) * | 1982-09-06 | 1984-03-15 | Toyota Central Res & Dev Lab Inc | Manufacture of porous hollow glass fiber |
JPS6257588B2 (en) * | 1982-09-06 | 1987-12-01 | Toyoda Chuo Kenkyusho Kk | |
US4482424A (en) * | 1983-05-06 | 1984-11-13 | At&T Bell Laboratories | Method for monitoring etching of resists by monitoring the flouresence of the unetched material |
JPS63107026A (en) * | 1986-10-23 | 1988-05-12 | Tokuda Seisakusho Ltd | Plasma etching device |
Also Published As
Publication number | Publication date |
---|---|
JPS5752421B2 (en) | 1982-11-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5747874A (en) | Detection of end point of dry etching reaction | |
JPS5360293A (en) | Frost detector | |
JPS5745927A (en) | Vacuum leakage detector for dry etching vacuum container | |
JPS5337457A (en) | Distance measuring device | |
JPS5792510A (en) | Etching of silicon nitride film | |
JPS52110678A (en) | Troubled point detector of gaseous insulators | |
JPS54155054A (en) | Detector | |
JPS57202870A (en) | Device for firing light-firing thyristor | |
JPS5337455A (en) | Distance measuring device | |
JPS57120674A (en) | Detection of etching | |
JPS52120785A (en) | Light detection semiconductor device | |
JPS5273786A (en) | Object abnormality detector | |
Cervenan et al. | Pressure dependence of stimulated brillouin scattering from a hydrogen gas target | |
JPS53105199A (en) | Glass destruction detector with breakaway detection switch | |
JPS5367936A (en) | Device for controlling door | |
JPS5728275A (en) | Automatic ri monitor system having self-diagnostic function | |
JPS5211090A (en) | Liquid concentration detector | |
JPS5680186A (en) | Laser device | |
JPS54151059A (en) | Measuring pulse transmitter | |
JPS5315872A (en) | Dew detector | |
JPS53133081A (en) | Electron spin resonator | |
JPS5314353A (en) | Decision circuit for inverter actuation | |
JPS5313442A (en) | Optical detector | |
JPS5657929A (en) | Tire air pressure measuring device using microwave | |
JPS5370473A (en) | Partial discharge measuring apparatus |