JPS52120785A - Light detection semiconductor device - Google Patents

Light detection semiconductor device

Info

Publication number
JPS52120785A
JPS52120785A JP3724276A JP3724276A JPS52120785A JP S52120785 A JPS52120785 A JP S52120785A JP 3724276 A JP3724276 A JP 3724276A JP 3724276 A JP3724276 A JP 3724276A JP S52120785 A JPS52120785 A JP S52120785A
Authority
JP
Japan
Prior art keywords
semiconductor device
light detection
detection semiconductor
gate voltage
infrared ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3724276A
Other languages
Japanese (ja)
Inventor
Shinji Onga
Kazumichi Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP3724276A priority Critical patent/JPS52120785A/en
Publication of JPS52120785A publication Critical patent/JPS52120785A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To set the maximum shifting rate variation direction to the channeldirection by use of the fact that the energy level range between bands is variable depending on the gate voltage under the residual stress and gate voltage application. As a result, the infrared ray and the light which is longer wavelength side than the infrared ray can be detected with high sensitivity.
COPYRIGHT: (C)1977,JPO&Japio
JP3724276A 1976-04-05 1976-04-05 Light detection semiconductor device Pending JPS52120785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3724276A JPS52120785A (en) 1976-04-05 1976-04-05 Light detection semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3724276A JPS52120785A (en) 1976-04-05 1976-04-05 Light detection semiconductor device

Publications (1)

Publication Number Publication Date
JPS52120785A true JPS52120785A (en) 1977-10-11

Family

ID=12492139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3724276A Pending JPS52120785A (en) 1976-04-05 1976-04-05 Light detection semiconductor device

Country Status (1)

Country Link
JP (1) JPS52120785A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5897877A (en) * 1981-11-26 1983-06-10 シ−メンス・アクチエンゲゼルシヤフト Thin film mos phototransistor, method of producing same and driving method
JPH06188448A (en) * 1993-04-02 1994-07-08 Semiconductor Energy Lab Co Ltd Phototransistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826982A (en) * 1971-08-11 1973-04-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826982A (en) * 1971-08-11 1973-04-09

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5897877A (en) * 1981-11-26 1983-06-10 シ−メンス・アクチエンゲゼルシヤフト Thin film mos phototransistor, method of producing same and driving method
JPH06188448A (en) * 1993-04-02 1994-07-08 Semiconductor Energy Lab Co Ltd Phototransistor
JPH07105523B2 (en) * 1993-04-02 1995-11-13 株式会社 半導体エネルギー研究所 Photo transistor

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