JPS52120785A - Light detection semiconductor device - Google Patents
Light detection semiconductor deviceInfo
- Publication number
- JPS52120785A JPS52120785A JP3724276A JP3724276A JPS52120785A JP S52120785 A JPS52120785 A JP S52120785A JP 3724276 A JP3724276 A JP 3724276A JP 3724276 A JP3724276 A JP 3724276A JP S52120785 A JPS52120785 A JP S52120785A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- light detection
- detection semiconductor
- gate voltage
- infrared ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To set the maximum shifting rate variation direction to the channeldirection by use of the fact that the energy level range between bands is variable depending on the gate voltage under the residual stress and gate voltage application. As a result, the infrared ray and the light which is longer wavelength side than the infrared ray can be detected with high sensitivity.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3724276A JPS52120785A (en) | 1976-04-05 | 1976-04-05 | Light detection semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3724276A JPS52120785A (en) | 1976-04-05 | 1976-04-05 | Light detection semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52120785A true JPS52120785A (en) | 1977-10-11 |
Family
ID=12492139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3724276A Pending JPS52120785A (en) | 1976-04-05 | 1976-04-05 | Light detection semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52120785A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5897877A (en) * | 1981-11-26 | 1983-06-10 | シ−メンス・アクチエンゲゼルシヤフト | Thin film mos phototransistor, method of producing same and driving method |
JPH06188448A (en) * | 1993-04-02 | 1994-07-08 | Semiconductor Energy Lab Co Ltd | Phototransistor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4826982A (en) * | 1971-08-11 | 1973-04-09 |
-
1976
- 1976-04-05 JP JP3724276A patent/JPS52120785A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4826982A (en) * | 1971-08-11 | 1973-04-09 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5897877A (en) * | 1981-11-26 | 1983-06-10 | シ−メンス・アクチエンゲゼルシヤフト | Thin film mos phototransistor, method of producing same and driving method |
JPH06188448A (en) * | 1993-04-02 | 1994-07-08 | Semiconductor Energy Lab Co Ltd | Phototransistor |
JPH07105523B2 (en) * | 1993-04-02 | 1995-11-13 | 株式会社 半導体エネルギー研究所 | Photo transistor |
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