JPS57120674A - Detection of etching - Google Patents

Detection of etching

Info

Publication number
JPS57120674A
JPS57120674A JP697781A JP697781A JPS57120674A JP S57120674 A JPS57120674 A JP S57120674A JP 697781 A JP697781 A JP 697781A JP 697781 A JP697781 A JP 697781A JP S57120674 A JPS57120674 A JP S57120674A
Authority
JP
Japan
Prior art keywords
wavelength
etching
emission
specific
emission spectrum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP697781A
Other languages
Japanese (ja)
Inventor
Nobuyasu Hase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP697781A priority Critical patent/JPS57120674A/en
Publication of JPS57120674A publication Critical patent/JPS57120674A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To detect the progression condition and end point of etching easily by taking out only the emission spectrum by a material to be etched from the observed emission spectra of an etching system. CONSTITUTION:After light from an etching vessel 2 is passed through a chopper 7, it is bisected with a half mirror 14, and is introduced into two units of different spectroscopes 8, 8'. At this time, the difference between the signal S1 from a photodetector 9 and the signal S2 from a photodetector 9' is taken, whereby the unstability of the background signal accompanied with the plasma fluctuation in the vessel 2 is eliminated and only the emission spectrum specific to a material 4 to be etched can be taken out. Only this spectrum is recorded in a recorder 11. In this case, the wavelength of the spectroscope 8 is set at the emission wavelength specific to the material 4 and the wavelength of the spectroscope 8' is set at the wavelength as near the emission spectrum specific to the material 4 as possible without having its influence.
JP697781A 1981-01-19 1981-01-19 Detection of etching Pending JPS57120674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP697781A JPS57120674A (en) 1981-01-19 1981-01-19 Detection of etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP697781A JPS57120674A (en) 1981-01-19 1981-01-19 Detection of etching

Publications (1)

Publication Number Publication Date
JPS57120674A true JPS57120674A (en) 1982-07-27

Family

ID=11653249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP697781A Pending JPS57120674A (en) 1981-01-19 1981-01-19 Detection of etching

Country Status (1)

Country Link
JP (1) JPS57120674A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308414A (en) * 1992-12-23 1994-05-03 International Business Machines Corporation Method and apparatus for optical emission end point detection in plasma etching processes
US5989928A (en) * 1995-10-20 1999-11-23 Hitachi, Ltd. Method and device for detecting end point of plasma treatment, method and device for manufacturing semiconductor device, and semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556407A (en) * 1978-06-26 1980-01-17 Hitachi Ltd Etching method for aluminum

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556407A (en) * 1978-06-26 1980-01-17 Hitachi Ltd Etching method for aluminum

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308414A (en) * 1992-12-23 1994-05-03 International Business Machines Corporation Method and apparatus for optical emission end point detection in plasma etching processes
US5989928A (en) * 1995-10-20 1999-11-23 Hitachi, Ltd. Method and device for detecting end point of plasma treatment, method and device for manufacturing semiconductor device, and semiconductor device

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