JPS5792510A - Etching of silicon nitride film - Google Patents
Etching of silicon nitride filmInfo
- Publication number
- JPS5792510A JPS5792510A JP16466180A JP16466180A JPS5792510A JP S5792510 A JPS5792510 A JP S5792510A JP 16466180 A JP16466180 A JP 16466180A JP 16466180 A JP16466180 A JP 16466180A JP S5792510 A JPS5792510 A JP S5792510A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- plasma
- light
- etched
- end point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To determine the end point, etc. of the etching of the titled film in plasma, in high accuracy, even if the area to be etched is small, by using plasma light having a specific wavelength as the reference light to be monitored for the detection of the end point, etc. of etching.
CONSTITUTION: The material 4 to be etched is placed in the etching chamber 1, and the silicon nitride film 7 which is not covered with the resist 8 is etched with the plasma of gas such as freon (CF4-O2). During etching, the plasma light having wavelength of 337.0nm or 357.5nm is detected through a filter by the light sensor 2, and the intensity is recorded by the recorder 3. For example, the intensity of the light of 337.0nm wavelength rises simultaneously with the generation of plasma, and drops at the end of the etching, and the intensity difference is larger than that of the light used in the conventional process. Acoordingly, the end point can be determined in high accuracy and reliability. The accidental leak during etching can also be detected.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16466180A JPS5792510A (en) | 1980-11-25 | 1980-11-25 | Etching of silicon nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16466180A JPS5792510A (en) | 1980-11-25 | 1980-11-25 | Etching of silicon nitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5792510A true JPS5792510A (en) | 1982-06-09 |
Family
ID=15797402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16466180A Pending JPS5792510A (en) | 1980-11-25 | 1980-11-25 | Etching of silicon nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5792510A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61110434A (en) * | 1984-11-02 | 1986-05-28 | Matsushita Electric Ind Co Ltd | Dry etching end point detecting method for silicon nitride film |
| JPS61113236A (en) * | 1984-11-08 | 1986-05-31 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| WO2002023585A3 (en) * | 2000-09-15 | 2002-05-16 | Koninkl Philips Electronics Nv | Method and apparatus for detecting leaks in a plasma etch chamber |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5135639A (en) * | 1974-09-20 | 1976-03-26 | Hitachi Ltd | HIMAKUNOPURAZUMA ETSUCHINGUSHORISHUTENKENSHUTSUHO |
-
1980
- 1980-11-25 JP JP16466180A patent/JPS5792510A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5135639A (en) * | 1974-09-20 | 1976-03-26 | Hitachi Ltd | HIMAKUNOPURAZUMA ETSUCHINGUSHORISHUTENKENSHUTSUHO |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61110434A (en) * | 1984-11-02 | 1986-05-28 | Matsushita Electric Ind Co Ltd | Dry etching end point detecting method for silicon nitride film |
| JPS61113236A (en) * | 1984-11-08 | 1986-05-31 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| WO2002023585A3 (en) * | 2000-09-15 | 2002-05-16 | Koninkl Philips Electronics Nv | Method and apparatus for detecting leaks in a plasma etch chamber |
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