WO2002023585A3 - Method and apparatus for detecting leaks in a plasma etch chamber - Google Patents

Method and apparatus for detecting leaks in a plasma etch chamber Download PDF

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Publication number
WO2002023585A3
WO2002023585A3 PCT/EP2001/010180 EP0110180W WO0223585A3 WO 2002023585 A3 WO2002023585 A3 WO 2002023585A3 EP 0110180 W EP0110180 W EP 0110180W WO 0223585 A3 WO0223585 A3 WO 0223585A3
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WO
WIPO (PCT)
Prior art keywords
etch
plasma etch
plasma
environment
trace
Prior art date
Application number
PCT/EP2001/010180
Other languages
French (fr)
Other versions
WO2002023585A2 (en
Inventor
Kailash Singh
Gary Scott
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of WO2002023585A2 publication Critical patent/WO2002023585A2/en
Publication of WO2002023585A3 publication Critical patent/WO2002023585A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

For use with semiconductor processing, a plasma etch apparatus has a leak detection system in an etch environment. The leak detection comprises monitoring a plasma etch trace. The plasma etch trace exhibits a dip in the plasma intensity. This dip correlates with a change of pressure in the etch environment. In an example embodiment according to the present invention, an etch environment, having an entrance load lock and an exit load lock isolating the etch environment from the atmosphere, is monitored. Leaks in the etch environment to the load locks during wafer transfer and pump down are detected by observing dips in the plasma etch trace.
PCT/EP2001/010180 2000-09-15 2001-09-03 Method and apparatus for detecting leaks in a plasma etch chamber WO2002023585A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66256600A 2000-09-15 2000-09-15
US09/662,566 2000-09-15

Publications (2)

Publication Number Publication Date
WO2002023585A2 WO2002023585A2 (en) 2002-03-21
WO2002023585A3 true WO2002023585A3 (en) 2002-05-16

Family

ID=24658232

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/010180 WO2002023585A2 (en) 2000-09-15 2001-09-03 Method and apparatus for detecting leaks in a plasma etch chamber

Country Status (1)

Country Link
WO (1) WO2002023585A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1394835A1 (en) * 2002-08-29 2004-03-03 STMicroelectronics S.r.l. A method and apparatus for detecting a leak of external air into a plasma reactor
US8393197B2 (en) * 2008-07-24 2013-03-12 Pivotal Systems Corporation Method and apparatus for the measurement of atmospheric leaks in the presence of chamber outgassing
CN102403191B (en) * 2010-09-14 2014-05-21 中微半导体设备(上海)有限公司 Air leakage detecting method for reaction cavity and control method for vacuum reactor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792510A (en) * 1980-11-25 1982-06-09 Oki Electric Ind Co Ltd Etching of silicon nitride film
JPH0722401A (en) * 1993-07-05 1995-01-24 Hiroshima Nippon Denki Kk Plasma etching apparatus
JPH0750289A (en) * 1993-08-04 1995-02-21 Hiroshima Nippon Denki Kk Plasma etching equipment
US5522957A (en) * 1993-12-22 1996-06-04 Vlsi Technology, Inc. Method for leak detection in etching chambers
US5789754A (en) * 1996-08-19 1998-08-04 Micron Technology, Inc. Leak detection method and apparatus for plasma processing equipment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792510A (en) * 1980-11-25 1982-06-09 Oki Electric Ind Co Ltd Etching of silicon nitride film
JPH0722401A (en) * 1993-07-05 1995-01-24 Hiroshima Nippon Denki Kk Plasma etching apparatus
JPH0750289A (en) * 1993-08-04 1995-02-21 Hiroshima Nippon Denki Kk Plasma etching equipment
US5522957A (en) * 1993-12-22 1996-06-04 Vlsi Technology, Inc. Method for leak detection in etching chambers
US5789754A (en) * 1996-08-19 1998-08-04 Micron Technology, Inc. Leak detection method and apparatus for plasma processing equipment

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 006, no. 177 (C - 124) 11 September 1982 (1982-09-11) *
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 04 31 May 1995 (1995-05-31) *
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 05 30 June 1995 (1995-06-30) *

Also Published As

Publication number Publication date
WO2002023585A2 (en) 2002-03-21

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