JPS5723226A - Plasma etching device - Google Patents

Plasma etching device

Info

Publication number
JPS5723226A
JPS5723226A JP9691880A JP9691880A JPS5723226A JP S5723226 A JPS5723226 A JP S5723226A JP 9691880 A JP9691880 A JP 9691880A JP 9691880 A JP9691880 A JP 9691880A JP S5723226 A JPS5723226 A JP S5723226A
Authority
JP
Japan
Prior art keywords
etching
speed
sample
sensor
etching speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9691880A
Other languages
Japanese (ja)
Other versions
JPH0343772B2 (en
Inventor
Kazuo Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9691880A priority Critical patent/JPS5723226A/en
Publication of JPS5723226A publication Critical patent/JPS5723226A/en
Publication of JPH0343772B2 publication Critical patent/JPH0343772B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enhance manufacturing yield of semiconductor elements by a method wherein etching speed or quantity corresponding to etching speed of a plasma etching device in an object to be processed is converted into an electric signal during the etching process to control etching speed. CONSTITUTION:A sensor 11 is equipped to the wall of an etching chamber 1, a sensor 12 is to a sample electrode 9, and a sensor 10 is equipped to an electrode 8 facing to the sample electrode. A feedback circuit 13 amplifiers detected signals sent from the sensors and compares with the reference voltages, and generates feedback signals in accordance with the compared outputs. This signal controls a high- frequency electric power source 7 to control the applying voltage, and etching speed of the sample 4 is held at the prescribed speed. Or the distance between the electrodes 8, 9 are made to be changed in accordance with the feedback signals, or both the methods are assembled to hold etching speed in the sample uniformly. By this constitution, highly reliable etching can be performed, and yield of the semiconductor elements can be enhanced.
JP9691880A 1980-07-17 1980-07-17 Plasma etching device Granted JPS5723226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9691880A JPS5723226A (en) 1980-07-17 1980-07-17 Plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9691880A JPS5723226A (en) 1980-07-17 1980-07-17 Plasma etching device

Publications (2)

Publication Number Publication Date
JPS5723226A true JPS5723226A (en) 1982-02-06
JPH0343772B2 JPH0343772B2 (en) 1991-07-03

Family

ID=14177732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9691880A Granted JPS5723226A (en) 1980-07-17 1980-07-17 Plasma etching device

Country Status (1)

Country Link
JP (1) JPS5723226A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63248130A (en) * 1987-02-24 1988-10-14 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Plasma reactor
JPH04142734A (en) * 1990-10-03 1992-05-15 Mitsubishi Electric Corp Fine processing device and method
US5167748A (en) * 1990-09-06 1992-12-01 Charles Evans And Associates Plasma etching method and apparatus
US5415718A (en) * 1990-09-21 1995-05-16 Tadahiro Ohmi Reactive ion etching device
JP2008502145A (en) * 2004-06-02 2008-01-24 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド Plasma ion implantation monitoring system for error detection and process control
JP2017518646A (en) * 2014-06-04 2017-07-06 ユニバーシティ ド エクス‐マルセイユ Method for randomly texturing a semiconductor substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347277A (en) * 1976-10-13 1978-04-27 Toshiba Corp Etching method
JPS53108286A (en) * 1977-03-03 1978-09-20 Nichiden Varian Kk Etching control device
JPS53136967A (en) * 1977-05-04 1978-11-29 Nippon Telegr & Teleph Corp <Ntt> Dry etching method for silicon oxide film on silicon substrate
JPS5572039A (en) * 1978-11-25 1980-05-30 Mitsubishi Electric Corp Plasma etching device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347277A (en) * 1976-10-13 1978-04-27 Toshiba Corp Etching method
JPS53108286A (en) * 1977-03-03 1978-09-20 Nichiden Varian Kk Etching control device
JPS53136967A (en) * 1977-05-04 1978-11-29 Nippon Telegr & Teleph Corp <Ntt> Dry etching method for silicon oxide film on silicon substrate
JPS5572039A (en) * 1978-11-25 1980-05-30 Mitsubishi Electric Corp Plasma etching device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63248130A (en) * 1987-02-24 1988-10-14 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Plasma reactor
US5167748A (en) * 1990-09-06 1992-12-01 Charles Evans And Associates Plasma etching method and apparatus
US5415718A (en) * 1990-09-21 1995-05-16 Tadahiro Ohmi Reactive ion etching device
JPH04142734A (en) * 1990-10-03 1992-05-15 Mitsubishi Electric Corp Fine processing device and method
JP2008502145A (en) * 2004-06-02 2008-01-24 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド Plasma ion implantation monitoring system for error detection and process control
JP2017518646A (en) * 2014-06-04 2017-07-06 ユニバーシティ ド エクス‐マルセイユ Method for randomly texturing a semiconductor substrate

Also Published As

Publication number Publication date
JPH0343772B2 (en) 1991-07-03

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