JPS5572039A - Plasma etching device - Google Patents

Plasma etching device

Info

Publication number
JPS5572039A
JPS5572039A JP14749378A JP14749378A JPS5572039A JP S5572039 A JPS5572039 A JP S5572039A JP 14749378 A JP14749378 A JP 14749378A JP 14749378 A JP14749378 A JP 14749378A JP S5572039 A JPS5572039 A JP S5572039A
Authority
JP
Japan
Prior art keywords
electrode
controller
pattern
plasma etching
etching device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14749378A
Other languages
Japanese (ja)
Inventor
Yukimichi Kanedaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14749378A priority Critical patent/JPS5572039A/en
Publication of JPS5572039A publication Critical patent/JPS5572039A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To provide a well-defined fine pattern by dividing facing electrodes and controlling applied voltage, power, and time. CONSTITUTION:Divided electrodes 21-25 are given and voltages, powers, and times applied to each electrode are independently controlled by the controller 12. In this manner, the etching speed is made uniform to etch the sample 4. The controller 12 uses the outputs from the temperature sensors 13-18 provided underneath the electrode 3 to maintain the temperatures on the surface of the samples 4 at a constant value so that the temperature is distributed uniformly. The structure allows the plasma distribution to be defined to the desired shape in the reaction chamber, thereby reducing variations in the pattern dimensions and keeping a stable pattern quality.
JP14749378A 1978-11-25 1978-11-25 Plasma etching device Pending JPS5572039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14749378A JPS5572039A (en) 1978-11-25 1978-11-25 Plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14749378A JPS5572039A (en) 1978-11-25 1978-11-25 Plasma etching device

Publications (1)

Publication Number Publication Date
JPS5572039A true JPS5572039A (en) 1980-05-30

Family

ID=15431627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14749378A Pending JPS5572039A (en) 1978-11-25 1978-11-25 Plasma etching device

Country Status (1)

Country Link
JP (1) JPS5572039A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723226A (en) * 1980-07-17 1982-02-06 Nippon Telegr & Teleph Corp <Ntt> Plasma etching device
JPS5810830A (en) * 1981-07-10 1983-01-21 Seiko Epson Corp Dry etching device
JPH01218626A (en) * 1988-02-29 1989-08-31 Hitachi Ltd Discharge washing apparatus
JPH01298182A (en) * 1988-05-27 1989-12-01 Hitachi Ltd Etching device
US8382941B2 (en) 2008-09-15 2013-02-26 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723226A (en) * 1980-07-17 1982-02-06 Nippon Telegr & Teleph Corp <Ntt> Plasma etching device
JPH0343772B2 (en) * 1980-07-17 1991-07-03 Nippon Telegraph & Telephone
JPS5810830A (en) * 1981-07-10 1983-01-21 Seiko Epson Corp Dry etching device
JPH01218626A (en) * 1988-02-29 1989-08-31 Hitachi Ltd Discharge washing apparatus
JPH01298182A (en) * 1988-05-27 1989-12-01 Hitachi Ltd Etching device
US8382941B2 (en) 2008-09-15 2013-02-26 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods
US8715519B2 (en) 2008-09-15 2014-05-06 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods

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