JPS577935A - Method for dry etching - Google Patents

Method for dry etching

Info

Publication number
JPS577935A
JPS577935A JP8209980A JP8209980A JPS577935A JP S577935 A JPS577935 A JP S577935A JP 8209980 A JP8209980 A JP 8209980A JP 8209980 A JP8209980 A JP 8209980A JP S577935 A JPS577935 A JP S577935A
Authority
JP
Japan
Prior art keywords
etched
electrode
supporting body
dry etching
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8209980A
Other languages
Japanese (ja)
Inventor
Naomichi Abe
Masanao Itoga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8209980A priority Critical patent/JPS577935A/en
Publication of JPS577935A publication Critical patent/JPS577935A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enable high speed dry etching to be performed by providing an attracting device having a pair of electrodes on a supporting body with a constant temperature, applying a voltage on said electrodes, electrostatically attracting an object to be etched to the supporting body, and controlling the temperature. CONSTITUTION:A positive electrode 11 of a reactive sputter etching device 10 is grounded, a high frequency voltage is applied on an negative electrode 12 via a capacitor 13, and etching is performed. The negative electrode 12 also serves as a supporting body for the object to be etched 14. The electrode 12 is provided with a cooling part and a heater in the inside and an electrode plate 16 having a pair of interlaced electrode parts 17 and 18 at the surface. The voltage is applied between the electrodes 17 and 18, and the supporting body 12 electrostatically attracts the object to be etched 14. In the case dry etching is performed by using said electrode plate attracting device, the wafer temperature can be maintained at 50-70 deg.C. In this method, the cooling temperature of the object to be etched can be controlled, and the high speed dry etching can be performed by a large electric power.
JP8209980A 1980-06-19 1980-06-19 Method for dry etching Pending JPS577935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8209980A JPS577935A (en) 1980-06-19 1980-06-19 Method for dry etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8209980A JPS577935A (en) 1980-06-19 1980-06-19 Method for dry etching

Publications (1)

Publication Number Publication Date
JPS577935A true JPS577935A (en) 1982-01-16

Family

ID=13764963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8209980A Pending JPS577935A (en) 1980-06-19 1980-06-19 Method for dry etching

Country Status (1)

Country Link
JP (1) JPS577935A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58185773A (en) * 1982-04-21 1983-10-29 Toshiba Corp Dry etching method
JPH07273176A (en) * 1995-03-10 1995-10-20 Hitachi Ltd Sample holding method for vacuum processing system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58185773A (en) * 1982-04-21 1983-10-29 Toshiba Corp Dry etching method
JPH0518908B2 (en) * 1982-04-21 1993-03-15 Tokyo Shibaura Electric Co
JPH07273176A (en) * 1995-03-10 1995-10-20 Hitachi Ltd Sample holding method for vacuum processing system

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