JPS56123381A - Method and device for plasma etching - Google Patents
Method and device for plasma etchingInfo
- Publication number
- JPS56123381A JPS56123381A JP733480A JP733480A JPS56123381A JP S56123381 A JPS56123381 A JP S56123381A JP 733480 A JP733480 A JP 733480A JP 733480 A JP733480 A JP 733480A JP S56123381 A JPS56123381 A JP S56123381A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- magnetic field
- area
- locally
- moved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To apply stable intermittent plasma etching to the object to be treated by providing a magnetic field, allowing the plasma to exist locally in the predetermined area in a plasma generative area, and moving the locally existing area by moving the magnetic field.
CONSTITUTION: High-frequency electric power is applied across upper and lower electrodes 1 and 2 from a high-frequency power source 3, whereby the plasma is generated over the entire area between the electrodes 1 and 2. A magnetic field 4 is provided in a predetermined area to confine the plasma therein, whereby the plasma 5 existing locally in the predetermined area is formed. This plasma 5 is generated in the position away from an object 7 to be treated, thence the magnetic field 4 is moved to the position of the object 7, whereby the plasma 5 is moved and the object 7 is exposed in the plasma. Next, the magnetic field 4 is again moved to part the plasma 5 from the body 7. Thereafter, this operation is repeated, whereby the body 7 is intermittently plasma-etched.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP733480A JPS56123381A (en) | 1980-01-24 | 1980-01-24 | Method and device for plasma etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP733480A JPS56123381A (en) | 1980-01-24 | 1980-01-24 | Method and device for plasma etching |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56123381A true JPS56123381A (en) | 1981-09-28 |
JPS5727180B2 JPS5727180B2 (en) | 1982-06-09 |
Family
ID=11663045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP733480A Granted JPS56123381A (en) | 1980-01-24 | 1980-01-24 | Method and device for plasma etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56123381A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61128527A (en) * | 1984-11-27 | 1986-06-16 | Mitsubishi Electric Corp | Plasma etching device |
JPS62177189A (en) * | 1986-01-31 | 1987-08-04 | Rikagaku Kenkyusho | Method for local reforming of solid surface by plasma |
JPS62253785A (en) * | 1986-04-28 | 1987-11-05 | Tokyo Univ | Intermittent etching method |
US5612804A (en) * | 1992-11-02 | 1997-03-18 | Olympus Optical Co., Ltd. | Liquid crystal display with an electrode connector |
-
1980
- 1980-01-24 JP JP733480A patent/JPS56123381A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61128527A (en) * | 1984-11-27 | 1986-06-16 | Mitsubishi Electric Corp | Plasma etching device |
JPS62177189A (en) * | 1986-01-31 | 1987-08-04 | Rikagaku Kenkyusho | Method for local reforming of solid surface by plasma |
JPS62253785A (en) * | 1986-04-28 | 1987-11-05 | Tokyo Univ | Intermittent etching method |
US5612804A (en) * | 1992-11-02 | 1997-03-18 | Olympus Optical Co., Ltd. | Liquid crystal display with an electrode connector |
Also Published As
Publication number | Publication date |
---|---|
JPS5727180B2 (en) | 1982-06-09 |
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