JPS56123381A - Method and device for plasma etching - Google Patents

Method and device for plasma etching

Info

Publication number
JPS56123381A
JPS56123381A JP733480A JP733480A JPS56123381A JP S56123381 A JPS56123381 A JP S56123381A JP 733480 A JP733480 A JP 733480A JP 733480 A JP733480 A JP 733480A JP S56123381 A JPS56123381 A JP S56123381A
Authority
JP
Japan
Prior art keywords
plasma
magnetic field
area
locally
moved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP733480A
Other languages
Japanese (ja)
Other versions
JPS5727180B2 (en
Inventor
Kenichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP733480A priority Critical patent/JPS56123381A/en
Publication of JPS56123381A publication Critical patent/JPS56123381A/en
Publication of JPS5727180B2 publication Critical patent/JPS5727180B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To apply stable intermittent plasma etching to the object to be treated by providing a magnetic field, allowing the plasma to exist locally in the predetermined area in a plasma generative area, and moving the locally existing area by moving the magnetic field.
CONSTITUTION: High-frequency electric power is applied across upper and lower electrodes 1 and 2 from a high-frequency power source 3, whereby the plasma is generated over the entire area between the electrodes 1 and 2. A magnetic field 4 is provided in a predetermined area to confine the plasma therein, whereby the plasma 5 existing locally in the predetermined area is formed. This plasma 5 is generated in the position away from an object 7 to be treated, thence the magnetic field 4 is moved to the position of the object 7, whereby the plasma 5 is moved and the object 7 is exposed in the plasma. Next, the magnetic field 4 is again moved to part the plasma 5 from the body 7. Thereafter, this operation is repeated, whereby the body 7 is intermittently plasma-etched.
COPYRIGHT: (C)1981,JPO&Japio
JP733480A 1980-01-24 1980-01-24 Method and device for plasma etching Granted JPS56123381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP733480A JPS56123381A (en) 1980-01-24 1980-01-24 Method and device for plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP733480A JPS56123381A (en) 1980-01-24 1980-01-24 Method and device for plasma etching

Publications (2)

Publication Number Publication Date
JPS56123381A true JPS56123381A (en) 1981-09-28
JPS5727180B2 JPS5727180B2 (en) 1982-06-09

Family

ID=11663045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP733480A Granted JPS56123381A (en) 1980-01-24 1980-01-24 Method and device for plasma etching

Country Status (1)

Country Link
JP (1) JPS56123381A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61128527A (en) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp Plasma etching device
JPS62177189A (en) * 1986-01-31 1987-08-04 Rikagaku Kenkyusho Method for local reforming of solid surface by plasma
JPS62253785A (en) * 1986-04-28 1987-11-05 Tokyo Univ Intermittent etching method
US5612804A (en) * 1992-11-02 1997-03-18 Olympus Optical Co., Ltd. Liquid crystal display with an electrode connector

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61128527A (en) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp Plasma etching device
JPS62177189A (en) * 1986-01-31 1987-08-04 Rikagaku Kenkyusho Method for local reforming of solid surface by plasma
JPS62253785A (en) * 1986-04-28 1987-11-05 Tokyo Univ Intermittent etching method
US5612804A (en) * 1992-11-02 1997-03-18 Olympus Optical Co., Ltd. Liquid crystal display with an electrode connector

Also Published As

Publication number Publication date
JPS5727180B2 (en) 1982-06-09

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