JPS5635775A - Ion beam etching method - Google Patents
Ion beam etching methodInfo
- Publication number
- JPS5635775A JPS5635775A JP10786580A JP10786580A JPS5635775A JP S5635775 A JPS5635775 A JP S5635775A JP 10786580 A JP10786580 A JP 10786580A JP 10786580 A JP10786580 A JP 10786580A JP S5635775 A JPS5635775 A JP S5635775A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- plasma
- active gas
- power source
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To perform constant etching for a long time, by ionizing active gas charged into an evacuated chamber, where a work is arranged, by applying voltage to electrodes maintained at unheated state so as to form plasma and to prevent the damage, caused in a short time, of the electrode due to the active gas.
CONSTITUTION: After an evacuated chamber 1 is evacuated, active gas composed of halogen such as F and halogen compound such as CF4 etc. is introduced 2 into the chamber 1. Then flat electrodes 12, 13 are arranged face to face as unheated electrodes for producing plasma in the part having smaller diameter, i.e. where gas plasma is generated. Electric power source 14 is connected across said electrodes so as to apply voltage to the electrodes, hereby the active gas is ionized by the electric field to form gas plasma. The work is etched by the gas plasma. The electrodes 12, 13 are made of stainless steel, Al, Cu etc. DC, AC, or high frequency electric power source may be used for the electric power source 14.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10786580A JPS5635775A (en) | 1980-08-06 | 1980-08-06 | Ion beam etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10786580A JPS5635775A (en) | 1980-08-06 | 1980-08-06 | Ion beam etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5635775A true JPS5635775A (en) | 1981-04-08 |
JPS572788B2 JPS572788B2 (en) | 1982-01-18 |
Family
ID=14470031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10786580A Granted JPS5635775A (en) | 1980-08-06 | 1980-08-06 | Ion beam etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5635775A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01129256A (en) * | 1987-11-13 | 1989-05-22 | Seiko Instr & Electron Ltd | Method for correcting pattern film |
US5427553A (en) * | 1992-07-08 | 1995-06-27 | Yazaki Corporation | Female type metal connection terminal |
JPH09134000A (en) * | 1996-09-02 | 1997-05-20 | Seiko Instr Inc | Pattern film correcting device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5039876A (en) * | 1973-08-11 | 1975-04-12 | ||
JPS5130698A (en) * | 1974-09-07 | 1976-03-16 | Shimadzu Corp | IONBIIMUHATSUSEISOCHI |
-
1980
- 1980-08-06 JP JP10786580A patent/JPS5635775A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5039876A (en) * | 1973-08-11 | 1975-04-12 | ||
JPS5130698A (en) * | 1974-09-07 | 1976-03-16 | Shimadzu Corp | IONBIIMUHATSUSEISOCHI |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01129256A (en) * | 1987-11-13 | 1989-05-22 | Seiko Instr & Electron Ltd | Method for correcting pattern film |
US5427553A (en) * | 1992-07-08 | 1995-06-27 | Yazaki Corporation | Female type metal connection terminal |
JPH09134000A (en) * | 1996-09-02 | 1997-05-20 | Seiko Instr Inc | Pattern film correcting device |
Also Published As
Publication number | Publication date |
---|---|
JPS572788B2 (en) | 1982-01-18 |
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