JPS5635775A - Ion beam etching method - Google Patents

Ion beam etching method

Info

Publication number
JPS5635775A
JPS5635775A JP10786580A JP10786580A JPS5635775A JP S5635775 A JPS5635775 A JP S5635775A JP 10786580 A JP10786580 A JP 10786580A JP 10786580 A JP10786580 A JP 10786580A JP S5635775 A JPS5635775 A JP S5635775A
Authority
JP
Japan
Prior art keywords
electrodes
plasma
active gas
power source
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10786580A
Other languages
Japanese (ja)
Other versions
JPS572788B2 (en
Inventor
Katsuhiro Fujino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10786580A priority Critical patent/JPS5635775A/en
Publication of JPS5635775A publication Critical patent/JPS5635775A/en
Publication of JPS572788B2 publication Critical patent/JPS572788B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To perform constant etching for a long time, by ionizing active gas charged into an evacuated chamber, where a work is arranged, by applying voltage to electrodes maintained at unheated state so as to form plasma and to prevent the damage, caused in a short time, of the electrode due to the active gas.
CONSTITUTION: After an evacuated chamber 1 is evacuated, active gas composed of halogen such as F and halogen compound such as CF4 etc. is introduced 2 into the chamber 1. Then flat electrodes 12, 13 are arranged face to face as unheated electrodes for producing plasma in the part having smaller diameter, i.e. where gas plasma is generated. Electric power source 14 is connected across said electrodes so as to apply voltage to the electrodes, hereby the active gas is ionized by the electric field to form gas plasma. The work is etched by the gas plasma. The electrodes 12, 13 are made of stainless steel, Al, Cu etc. DC, AC, or high frequency electric power source may be used for the electric power source 14.
COPYRIGHT: (C)1981,JPO&Japio
JP10786580A 1980-08-06 1980-08-06 Ion beam etching method Granted JPS5635775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10786580A JPS5635775A (en) 1980-08-06 1980-08-06 Ion beam etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10786580A JPS5635775A (en) 1980-08-06 1980-08-06 Ion beam etching method

Publications (2)

Publication Number Publication Date
JPS5635775A true JPS5635775A (en) 1981-04-08
JPS572788B2 JPS572788B2 (en) 1982-01-18

Family

ID=14470031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10786580A Granted JPS5635775A (en) 1980-08-06 1980-08-06 Ion beam etching method

Country Status (1)

Country Link
JP (1) JPS5635775A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01129256A (en) * 1987-11-13 1989-05-22 Seiko Instr & Electron Ltd Method for correcting pattern film
US5427553A (en) * 1992-07-08 1995-06-27 Yazaki Corporation Female type metal connection terminal
JPH09134000A (en) * 1996-09-02 1997-05-20 Seiko Instr Inc Pattern film correcting device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039876A (en) * 1973-08-11 1975-04-12
JPS5130698A (en) * 1974-09-07 1976-03-16 Shimadzu Corp IONBIIMUHATSUSEISOCHI

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039876A (en) * 1973-08-11 1975-04-12
JPS5130698A (en) * 1974-09-07 1976-03-16 Shimadzu Corp IONBIIMUHATSUSEISOCHI

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01129256A (en) * 1987-11-13 1989-05-22 Seiko Instr & Electron Ltd Method for correcting pattern film
US5427553A (en) * 1992-07-08 1995-06-27 Yazaki Corporation Female type metal connection terminal
JPH09134000A (en) * 1996-09-02 1997-05-20 Seiko Instr Inc Pattern film correcting device

Also Published As

Publication number Publication date
JPS572788B2 (en) 1982-01-18

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