JPS5633839A - Plasma treatment and device therefor - Google Patents

Plasma treatment and device therefor

Info

Publication number
JPS5633839A
JPS5633839A JP10916179A JP10916179A JPS5633839A JP S5633839 A JPS5633839 A JP S5633839A JP 10916179 A JP10916179 A JP 10916179A JP 10916179 A JP10916179 A JP 10916179A JP S5633839 A JPS5633839 A JP S5633839A
Authority
JP
Japan
Prior art keywords
plasma
waves
electrode
ions
frequency oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10916179A
Other versions
JPS6346575B2 (en
Inventor
Yoshimichi Hirobe
Takashi Tsuchimoto
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP54109161A priority Critical patent/JPS6346575B2/ja
Publication of JPS5633839A publication Critical patent/JPS5633839A/en
Publication of JPS6346575B2 publication Critical patent/JPS6346575B2/ja
Application status is Expired legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Abstract

PURPOSE:To have ions reached a substrate with desired and effective energy by applying alternating current such as low-frequency square waves, triangular waves, sine waves to an electrode which control a plasma electric potential. CONSTITUTION:For example, capacity type coupling electrodes 10, 11 are provided on and beneath a vacuum container 5 accommodating a semiconductor substrate 6 and a high-frequency oscillator 3 for plasma generation is connected to the electrode 10. Such a plasma treatment device is independently provided with a low- frequency oscillator 12 which generates sufficiently lower frequencies than the frequencies of the high-frequency oscillator 3 and has ions followed sufficiently. Treatment such as plasma etching, deposition are performed by applying alternating current such as square waves, triangular waves, sine waves to the electrode 10 and by having ions with desired energy reached the substrate 6. In this way, high accurate treatment will be performed by controlling the energy of the plasma.
JP54109161A 1979-08-29 1979-08-29 Expired JPS6346575B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54109161A JPS6346575B2 (en) 1979-08-29 1979-08-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54109161A JPS6346575B2 (en) 1979-08-29 1979-08-29

Publications (2)

Publication Number Publication Date
JPS5633839A true JPS5633839A (en) 1981-04-04
JPS6346575B2 JPS6346575B2 (en) 1988-09-16

Family

ID=14503183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54109161A Expired JPS6346575B2 (en) 1979-08-29 1979-08-29

Country Status (1)

Country Link
JP (1) JPS6346575B2 (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122736A (en) * 1982-01-14 1983-07-21 Nippon Telegr & Teleph Corp <Ntt> Formation of insulating film
JPS6086831A (en) * 1983-10-19 1985-05-16 Hitachi Ltd Plasma treating method and device thereof
EP0149089A2 (en) * 1984-01-06 1985-07-24 Tegal Corporation Single electrode, multiple frequency plasma apparatus
JPS60257526A (en) * 1984-05-29 1985-12-19 Ibm Method of growing insulator layer
JPS611023A (en) * 1984-06-13 1986-01-07 Teru Saamuko Kk Batch plasma device
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
JPS61199079A (en) * 1985-02-28 1986-09-03 Anelva Corp Magnetic field generating apparatus in surface treating apparatus
JPS6415927A (en) * 1987-07-10 1989-01-19 Hitachi Ltd Method and device for dry etching
US4808258A (en) * 1983-10-19 1989-02-28 Hitachi, Ltd. Plasma processing method and apparatus for carrying out the same
JPH04290428A (en) * 1990-12-03 1992-10-15 Applied Materials Inc Plasma reactor using uhf/vhf resonance antenna supply source
US5330606A (en) * 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
WO1995029273A1 (en) * 1994-04-26 1995-11-02 Cobrain N.V. Multi-frequency inductive method and apparatus for the processing of material
US5547539A (en) * 1993-12-22 1996-08-20 Tokyo Electron Limited Plasma processing apparatus and method
US5698062A (en) * 1993-11-05 1997-12-16 Tokyo Electron Limited Plasma treatment apparatus and method
US6110287A (en) * 1993-03-31 2000-08-29 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
US6433297B1 (en) 1999-03-19 2002-08-13 Kabushiki Kaisha Toshiba Plasma processing method and plasma processing apparatus
KR100808862B1 (en) 2006-07-24 2008-03-03 삼성전자주식회사 Apparatus for treating substrate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02298024A (en) * 1989-05-12 1990-12-10 Tadahiro Omi Reactive ion etching apparatus
JPH03122384A (en) * 1989-10-05 1991-05-24 Nakanishi Eng:Kk Window sash stay

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122736A (en) * 1982-01-14 1983-07-21 Nippon Telegr & Teleph Corp <Ntt> Formation of insulating film
JPH0570930B2 (en) * 1983-10-19 1993-10-06 Hitachi Ltd
JPS6086831A (en) * 1983-10-19 1985-05-16 Hitachi Ltd Plasma treating method and device thereof
US4808258A (en) * 1983-10-19 1989-02-28 Hitachi, Ltd. Plasma processing method and apparatus for carrying out the same
EP0149089A2 (en) * 1984-01-06 1985-07-24 Tegal Corporation Single electrode, multiple frequency plasma apparatus
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JPH0347575B2 (en) * 1984-05-29 1991-07-19 Intaanashonaru Bijinesu Mashiinzu Corp
JPS60257526A (en) * 1984-05-29 1985-12-19 Ibm Method of growing insulator layer
JPS611023A (en) * 1984-06-13 1986-01-07 Teru Saamuko Kk Batch plasma device
JPS61199079A (en) * 1985-02-28 1986-09-03 Anelva Corp Magnetic field generating apparatus in surface treating apparatus
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
JPS6415927A (en) * 1987-07-10 1989-01-19 Hitachi Ltd Method and device for dry etching
JPH04290428A (en) * 1990-12-03 1992-10-15 Applied Materials Inc Plasma reactor using uhf/vhf resonance antenna supply source
US5330606A (en) * 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US5593539A (en) * 1990-12-14 1997-01-14 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US6110287A (en) * 1993-03-31 2000-08-29 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
US5698062A (en) * 1993-11-05 1997-12-16 Tokyo Electron Limited Plasma treatment apparatus and method
US5547539A (en) * 1993-12-22 1996-08-20 Tokyo Electron Limited Plasma processing apparatus and method
WO1995029273A1 (en) * 1994-04-26 1995-11-02 Cobrain N.V. Multi-frequency inductive method and apparatus for the processing of material
BE1008338A5 (en) * 1994-04-26 1996-04-02 Cobrain Nv Multi-frequency inductive method and device for working material.
US6433297B1 (en) 1999-03-19 2002-08-13 Kabushiki Kaisha Toshiba Plasma processing method and plasma processing apparatus
KR100808862B1 (en) 2006-07-24 2008-03-03 삼성전자주식회사 Apparatus for treating substrate

Also Published As

Publication number Publication date
JPS6346575B2 (en) 1988-09-16

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