JPS5760074A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS5760074A
JPS5760074A JP13625580A JP13625580A JPS5760074A JP S5760074 A JPS5760074 A JP S5760074A JP 13625580 A JP13625580 A JP 13625580A JP 13625580 A JP13625580 A JP 13625580A JP S5760074 A JPS5760074 A JP S5760074A
Authority
JP
Japan
Prior art keywords
substance
etched
cathode
temp
thermal contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13625580A
Other languages
Japanese (ja)
Other versions
JPS5744747B2 (en
Inventor
Naomichi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13625580A priority Critical patent/JPS5760074A/en
Priority to US06/304,902 priority patent/US4384918A/en
Priority to EP81304409A priority patent/EP0049588B1/en
Priority to DE8181304409T priority patent/DE3171924D1/en
Priority to IE2268/81A priority patent/IE52318B1/en
Publication of JPS5760074A publication Critical patent/JPS5760074A/en
Publication of JPS5744747B2 publication Critical patent/JPS5744747B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To effectively control the temp. of a substance to be etched and to accelerate the etching by electrostatically attracting the substance to a temp. controllable support to intensify the thermal contact. CONSTITUTION:Static electricity is applied to the cathode 12 of a plasma, sputter or reactive sputter etching apparatus 10 to attract a substance 14 to be etched. The cathode 12 is a support for the substance 14 and is provided with a jacket 15 for cooling or heating and an electrode plate having a pair of plane electrodes or an electrostatic attractor 16. The electrostatically attracted substance 14 is brought into thermal contact with the cathode 12 to perform accurate temp. control, and the substance 14 is etched.
JP13625580A 1980-09-30 1980-09-30 Dry etching method Granted JPS5760074A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP13625580A JPS5760074A (en) 1980-09-30 1980-09-30 Dry etching method
US06/304,902 US4384918A (en) 1980-09-30 1981-09-23 Method and apparatus for dry etching and electrostatic chucking device used therein
EP81304409A EP0049588B1 (en) 1980-09-30 1981-09-24 Method and apparatus for dry etching and electrostatic chucking device used therein
DE8181304409T DE3171924D1 (en) 1980-09-30 1981-09-24 Method and apparatus for dry etching and electrostatic chucking device used therein
IE2268/81A IE52318B1 (en) 1980-09-30 1981-09-29 Method and apparatus for dry etching and electrostatic chucking device used therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13625580A JPS5760074A (en) 1980-09-30 1980-09-30 Dry etching method

Publications (2)

Publication Number Publication Date
JPS5760074A true JPS5760074A (en) 1982-04-10
JPS5744747B2 JPS5744747B2 (en) 1982-09-22

Family

ID=15170902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13625580A Granted JPS5760074A (en) 1980-09-30 1980-09-30 Dry etching method

Country Status (1)

Country Link
JP (1) JPS5760074A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58185773A (en) * 1982-04-21 1983-10-29 Toshiba Corp Dry etching method
JPS62229947A (en) * 1986-03-31 1987-10-08 Tokuda Seisakusho Ltd Dry etching device
US6388861B1 (en) 1990-06-08 2002-05-14 Varian Semiconductor Equipment Associates, Inc. Electrostatic wafer clamp
WO2006079335A2 (en) * 2005-01-31 2006-08-03 Technische Universität Dresden Method and device for treating surfaces of materials by means of radiation while using an electrostatic field

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58185773A (en) * 1982-04-21 1983-10-29 Toshiba Corp Dry etching method
JPH0518908B2 (en) * 1982-04-21 1993-03-15 Tokyo Shibaura Electric Co
JPS62229947A (en) * 1986-03-31 1987-10-08 Tokuda Seisakusho Ltd Dry etching device
US6388861B1 (en) 1990-06-08 2002-05-14 Varian Semiconductor Equipment Associates, Inc. Electrostatic wafer clamp
WO2006079335A2 (en) * 2005-01-31 2006-08-03 Technische Universität Dresden Method and device for treating surfaces of materials by means of radiation while using an electrostatic field
WO2006079335A3 (en) * 2005-01-31 2007-01-18 Univ Dresden Tech Method and device for treating surfaces of materials by means of radiation while using an electrostatic field

Also Published As

Publication number Publication date
JPS5744747B2 (en) 1982-09-22

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