JPS56135934A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS56135934A
JPS56135934A JP3940780A JP3940780A JPS56135934A JP S56135934 A JPS56135934 A JP S56135934A JP 3940780 A JP3940780 A JP 3940780A JP 3940780 A JP3940780 A JP 3940780A JP S56135934 A JPS56135934 A JP S56135934A
Authority
JP
Japan
Prior art keywords
etching
dry etching
etching device
etched
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3940780A
Other languages
Japanese (ja)
Inventor
Akizo Hideyama
Tsunetoshi Arikado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP3940780A priority Critical patent/JPS56135934A/en
Publication of JPS56135934A publication Critical patent/JPS56135934A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To uniformalize the velocity of etching by providing a plurality of projected parts regularly and in the shape of a plane on the surface of the dry etching device of parallel flat-plate electrode type facing to the etching surface of a substance to be etched. CONSTITUTION:The needle-shaped projected parts 2a are provided regularly and in the shape of a plane on the surface of the electrode 2 of the dry etching device of parallel flat-plate electrode type having a chamber 1, pipings 5a, 5b and a discharge pipe 10 opposed to the etching surface of the substance 6 to be etched. Since an electric field within the etching surface can be uniformalized approximately by this constitution, the uniformity of the velocity of etching is remarkably improved.
JP3940780A 1980-03-27 1980-03-27 Dry etching device Pending JPS56135934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3940780A JPS56135934A (en) 1980-03-27 1980-03-27 Dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3940780A JPS56135934A (en) 1980-03-27 1980-03-27 Dry etching device

Publications (1)

Publication Number Publication Date
JPS56135934A true JPS56135934A (en) 1981-10-23

Family

ID=12552130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3940780A Pending JPS56135934A (en) 1980-03-27 1980-03-27 Dry etching device

Country Status (1)

Country Link
JP (1) JPS56135934A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143827A (en) * 1981-03-02 1982-09-06 Tokyo Ohka Kogyo Co Ltd Parallel, flat electrode
JPS5976427A (en) * 1982-10-14 1984-05-01 Fujitsu Ltd Plasma processing apparatus
WO2013161188A1 (en) * 2012-04-26 2013-10-31 信越半導体株式会社 Method of manufacturing bonded wafer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143827A (en) * 1981-03-02 1982-09-06 Tokyo Ohka Kogyo Co Ltd Parallel, flat electrode
JPS5976427A (en) * 1982-10-14 1984-05-01 Fujitsu Ltd Plasma processing apparatus
JPH0416937B2 (en) * 1982-10-14 1992-03-25 Fujitsu Ltd
WO2013161188A1 (en) * 2012-04-26 2013-10-31 信越半導体株式会社 Method of manufacturing bonded wafer
JP2013229516A (en) * 2012-04-26 2013-11-07 Shin Etsu Handotai Co Ltd Method for manufacturing lamination wafer
US9142449B2 (en) 2012-04-26 2015-09-22 Shin-Etsu Handotai Co., Ltd. Method for manufacturing bonded wafer

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