JPS57180131A - Dry etcher - Google Patents
Dry etcherInfo
- Publication number
- JPS57180131A JPS57180131A JP6591181A JP6591181A JPS57180131A JP S57180131 A JPS57180131 A JP S57180131A JP 6591181 A JP6591181 A JP 6591181A JP 6591181 A JP6591181 A JP 6591181A JP S57180131 A JPS57180131 A JP S57180131A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- controlled
- potential
- electrode
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent polymer film formation speed from growing large according to the progress of etching time by a method wherein DC potential of a non- grounded electrode against the earth is detected and the mixing quantity of H2 gas is variablly controlled in accordance with the detected potential. CONSTITUTION:A pair of parallel plate electrodes 12 and 13 are provided in a vacuum chamber 11 and high frequency electric power is applied to the electrodes 12 and 13 by a high frequency source 15 and the electrode 12 is grounded. A certain quantity of CF4 gas is introduced into the chamber 11 via a gas introducing hole 11a and H2 gas whose flow is controlled by a variable conductance valve 16 is introduced into the chamber 11 via a gas introducing hole 11b hole 11b. On the other hand, a DC potential detector 18 is connected between the electrode 13 and the earth terminal via a high voltage probe 17 and the detection signal of this detector 18 is transmitted to a controller 19 and the valve 16 is controlled. With this constitution, the optimum mixing quantity of H2 due to the accumulation of polymer film which grows according to the progress of etching time can be compensated automatically.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6591181A JPS57180131A (en) | 1981-04-30 | 1981-04-30 | Dry etcher |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6591181A JPS57180131A (en) | 1981-04-30 | 1981-04-30 | Dry etcher |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57180131A true JPS57180131A (en) | 1982-11-06 |
Family
ID=13300616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6591181A Pending JPS57180131A (en) | 1981-04-30 | 1981-04-30 | Dry etcher |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57180131A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6143426A (en) * | 1984-08-08 | 1986-03-03 | Ulvac Corp | Pressure controlling device for vacuum processing device |
| JPS61256637A (en) * | 1985-05-06 | 1986-11-14 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Monitoring of plasma etching process |
| JPH036818A (en) * | 1989-06-02 | 1991-01-14 | Mitsubishi Electric Corp | Manufacture of semiconductor |
-
1981
- 1981-04-30 JP JP6591181A patent/JPS57180131A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6143426A (en) * | 1984-08-08 | 1986-03-03 | Ulvac Corp | Pressure controlling device for vacuum processing device |
| JPS61256637A (en) * | 1985-05-06 | 1986-11-14 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Monitoring of plasma etching process |
| JPH0528895B2 (en) * | 1985-05-06 | 1993-04-27 | Intaanashonaru Bijinesu Mashiinzu Corp | |
| JPH036818A (en) * | 1989-06-02 | 1991-01-14 | Mitsubishi Electric Corp | Manufacture of semiconductor |
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