JPS5694746A - Plasma etching device - Google Patents
Plasma etching deviceInfo
- Publication number
- JPS5694746A JPS5694746A JP17283979A JP17283979A JPS5694746A JP S5694746 A JPS5694746 A JP S5694746A JP 17283979 A JP17283979 A JP 17283979A JP 17283979 A JP17283979 A JP 17283979A JP S5694746 A JPS5694746 A JP S5694746A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- sample
- plasma
- partition plate
- etching device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To improve a uniformity of an etching speed by a method wherein a partition plate which has an opening with an approximately same shape as that of a sample plane and with a size as large as the sample plane is installed in an intermediate part between a plasma generation part and an etching part of a plasma etching device. CONSTITUTION:An external electrode 72 is attached to the upper plane of a cylindrical vacuum container 71 of a plasma etching device and at the lower part of the container where a gas exhaust port 79 is installed, a placing base 77 on which a sample 78 is placed is fixed. Above the sample, a partition plate 73 which has an opening having a diameter same as the sample and has an activation radical inlet conduit 74 protruding to the plasma generation part side is installed and then, an etching gas is induced from a gas inlet conduit 76 and further, a high frequency power is supplied between the electrode 72 and the partition plate 73 to generate a plasma state for performing an etching. With this, over the whole of the sample, an etching of a good uniformity is performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17283979A JPS5694746A (en) | 1979-12-28 | 1979-12-28 | Plasma etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17283979A JPS5694746A (en) | 1979-12-28 | 1979-12-28 | Plasma etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5694746A true JPS5694746A (en) | 1981-07-31 |
Family
ID=15949282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17283979A Pending JPS5694746A (en) | 1979-12-28 | 1979-12-28 | Plasma etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5694746A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58190030A (en) * | 1982-04-30 | 1983-11-05 | Kokusai Electric Co Ltd | Plasma etching apparatus providing parallel flat electrode |
| JPS5966120A (en) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | Semiconductor manufacturing device |
| EP0220901A2 (en) * | 1985-10-24 | 1987-05-06 | Texas Instruments Incorporated | Apparatus for plasma assisted etching |
| JPH05275384A (en) * | 1992-03-30 | 1993-10-22 | Nec Kyushu Ltd | Production apparatus for semiconductor device |
-
1979
- 1979-12-28 JP JP17283979A patent/JPS5694746A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58190030A (en) * | 1982-04-30 | 1983-11-05 | Kokusai Electric Co Ltd | Plasma etching apparatus providing parallel flat electrode |
| JPS5966120A (en) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | Semiconductor manufacturing device |
| EP0220901A2 (en) * | 1985-10-24 | 1987-05-06 | Texas Instruments Incorporated | Apparatus for plasma assisted etching |
| JPH05275384A (en) * | 1992-03-30 | 1993-10-22 | Nec Kyushu Ltd | Production apparatus for semiconductor device |
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