JPS6350477A - Formation of thin film device - Google Patents
Formation of thin film deviceInfo
- Publication number
- JPS6350477A JPS6350477A JP19344786A JP19344786A JPS6350477A JP S6350477 A JPS6350477 A JP S6350477A JP 19344786 A JP19344786 A JP 19344786A JP 19344786 A JP19344786 A JP 19344786A JP S6350477 A JPS6350477 A JP S6350477A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- thin film
- power density
- film device
- gas pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 title abstract description 4
- 230000008021 deposition Effects 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 230000004913 activation Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 19
- 230000004907 flux Effects 0.000 claims description 6
- 239000010408 film Substances 0.000 abstract description 14
- 230000010355 oscillation Effects 0.000 abstract description 3
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 27
- 238000010586 diagram Methods 0.000 description 18
- 238000000151 deposition Methods 0.000 description 16
- 230000007423 decrease Effects 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 101100331289 Aquifex aeolicus (strain VF5) der gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は薄膜装置の形成方法において、ＣＶＤ法による
磁界強度とＲＦパワー密度との関係が明らかにされてい
ないことによって膜厚を安定に形成し得ない従来方法の
問題点を解決するため、（磁界強度）ｘ（ＲＦパワー密
度）／（ガス圧力）の値を堆積反応の活性化エネルギに
比例した一定範囲に設定することにより、
膜厚を安定に制御し得、高品質の薄膜装置を形成するよ
うにしたものである。[Detailed Description of the Invention] [Summary] The present invention is a method for forming a thin film device, which is a method for forming a thin film device. In order to solve the problems with this method, we stably control the film thickness by setting the value of (magnetic field strength) x (RF power density) / (gas pressure) within a certain range proportional to the activation energy of the deposition reaction. Therefore, it is possible to form a high quality thin film device.
（産業上の利用分野〕
本発明は薄膜装置の形成方法、特に、磁界を印加された
プラズマを用いてプラズマＣＶＤ法による薄膜装置の形
成方法に関する。(Industrial Application Field) The present invention relates to a method for forming a thin film device, and particularly to a method for forming a thin film device by plasma CVD using plasma to which a magnetic field is applied.
薄膜装置において、配線膜となる７ＩＪ膜を形成する方
法として、磁界を加えたプラズマを用いてエツチングす
る例が従来知られている。この場合、ガス圧力が低いの
で電子の平均自由行程が十分長くなり、これにより、小
さい磁界を用いても効果があった。In a thin film device, etching using plasma to which a magnetic field is applied has been known as a method for forming a 7IJ film serving as a wiring film. In this case, because the gas pressure was low, the mean free path of the electrons was long enough, so that even a small magnetic field could be used effectively.
然るに、ＣＶＤ法においてはガス圧力が高く、電子運動
は磁界とパワーに大きく依存し、従来、磁界とパワーと
の関係が明らかにされていない。However, in the CVD method, the gas pressure is high and the electron motion largely depends on the magnetic field and power, and the relationship between the magnetic field and power has not been clarified to date.
この結果、従来のＣＶＤ法においては１ｇ！厚を安定に
制御して形成し得ず、高品質の薄膜装置を形成し１ｑな
い問題点があった。As a result, in the conventional CVD method, 1g! There was a problem in that the thickness could not be stably controlled and a high quality thin film device could not be formed.
磁界を印加されたプラズマを用いたプラズマＣＶＤ法に
よって薄膜を形成するに際し、（磁界強度）Ｘ（ＲＦパ
ワー密度）／（ガス圧力）の値を堆積反応の活性化エネ
ルギに比例した一定節囲に設定する。When forming a thin film by the plasma CVD method using plasma to which a magnetic field is applied, the value of (magnetic field strength) x (RF power density) / (gas pressure) is set to a constant range proportional to the activation energy of the deposition reaction. Set.
上記式中、磁界強度を２００Ｇ〜／１５００Ｇ、 ＲＦ
パワー密度を０．５Ｗ ／ ｃｔｓ ２〜２．０Ｗ／Ｃ
ｌＲ２，ガス圧力を１Ｔｏｒｒ〜５Ｔｏｒｒにし、上記
式の値を２０〜３０００Ｇ−Ｗ／Ｃｍ２ ・ＴＯｒｒに
すルコとニヨリ、膜厚を安定に制御し得る。In the above formula, magnetic field strength is 200G~/1500G, RF
Power density 0.5W/cts 2~2.0W/C
By setting the gas pressure to 1 Torr to 5 Torr and setting the value of the above formula to 20 to 3000 GW/Cm2 .Torr, the film thickness can be stably controlled.
第２図はプラズマ中の電子運動を示した図であり、同図
（Ａ）は磁界を印加しない場合、同図（Ｂ）は磁界を印
加した場合である。同図（Ａ）において、磁界を加えな
い場合、プラズマ中の電子ｅは電界Ｅと逆方向に粒子Ａ
と衝突しながら移動する。FIG. 2 is a diagram showing electron movement in plasma, where (A) shows the case where no magnetic field is applied, and (B) shows the case where a magnetic field is applied. In the same figure (A), when no magnetic field is applied, electrons e in the plasma move toward particles A in the opposite direction to the electric field E.
move while colliding with
これに対して磁界を加えた場合、同図（Ｂ）に示す如く
、電子ｅは、ｒｅ （ラーマ半径）＝３．４Ｘ （Ｅ
■／Ｂ）＜ａ＋）の式で示される円運動を行なって曲げ
られる。ここに、Ｂは磁界強度（ガウス）、■は電子エ
ネルギ（ｅＶ）である。このため、電子の走行距離λｅ
が長くなり、これにより、粒子Ａとの衝突が多くなって
ガス粒子はより多く励起され、結果的に、反応が促進さ
れることになる。When a magnetic field is applied to this, as shown in the same figure (B), the electron e becomes re (Rama radius) = 3.4X (E
(2)/B)<a+) It is bent by performing a circular motion expressed by the equation. Here, B is the magnetic field strength (Gauss), and ■ is the electron energy (eV). Therefore, the electron travel distance λe
becomes longer, thereby increasing the number of collisions with particles A, thereby exciting more gas particles, and as a result, the reaction is promoted.
従来のエツチングでは、ガス圧力が１０４Ｔｏｒｒと低
いためにλｅ ＞ｒｅの条件が満足され、圧力。In conventional etching, the gas pressure is as low as 104 Torr, so the condition of λe >re is satisfied, and the pressure is low.
パワー、ソースガス聞依存性に特異性が見られなかった
。No specificity was observed in power and source gas dependence.
そこで、本出願人は、プラズマＣＶＤ法に磁界を印加す
る場合、ガス圧力が０．５〜５Ｔｏｒｒと高いことによ
るガス圧力、ＲＦパワー、磁界強度に一定の条件がある
ことを見出した。Therefore, the present applicant has found that when applying a magnetic field in plasma CVD, there are certain conditions regarding the gas pressure, RF power, and magnetic field strength due to the gas pressure being as high as 0.5 to 5 Torr.
第１図は本発明方法による膜形成を説明する図を示す。FIG. 1 shows a diagram illustrating film formation by the method of the present invention.
このものは、磁界を加えたプラズマＣＶＤ法であるので
、ＭＰ−ＣＶＤ法と称す。同図に示す如く、真空とされ
た平行平板型プラズマチャンバ１０内に３ｉウエハ１１
を貯ぎ、１３．５６ ＭＨｚのＲＦ発振電源１２及び３
ｉウエハ１１下方のチャンバ１０外部にヒータ１３及び
マグネット１５を設置する。マグネッ１−１５によって
磁界を印加し、かつ、有機金属のトリメデルＡｅ （Ａ
２（ＣＩ−１３） ３ ） （ＴＭＡ）ガスを水素ガ
スで希釈し、上部電極のシャワー状ノズル１４からチャ
ンバ１０内に導入する。この場合、トリメチルＡｅは融
点（１５℃）以下の５℃程度に冷却して用いる。Since this method is a plasma CVD method in which a magnetic field is applied, it is called an MP-CVD method. As shown in the figure, a 3i wafer 11 is placed in a parallel plate plasma chamber 10 that is evacuated.
13.56 MHz RF oscillation power supplies 12 and 3
A heater 13 and a magnet 15 are installed outside the chamber 10 below the i-wafer 11. A magnetic field is applied by magnet 1-15, and an organic metal trimedel Ae (A
2 (CI-13) 3) (TMA) gas is diluted with hydrogen gas and introduced into the chamber 10 from the shower-like nozzle 14 of the upper electrode. In this case, trimethyl Ae is used after being cooled to about 5° C. below its melting point (15° C.).
第３図は第１図中Ｓ；ウェハ１１上での磁界強度分布図
であり、水平方向成分と垂直方向成分とに分けて描いで
ある。ここで、磁界によるプラズマ中の電子ｅの運動は
ヘリカル運動（第４図（Ａ））及びサイクロイド運動く
同図（Ｂ））の２種に大別サレ、ヘリカル運動は垂直磁
界にまつわりつく運動で、サイクロイド運動は水平磁界
によって曲げられた電子が陰極にはね返され乍らドリフ
トする運動である。ループ状に印加された磁界では第３
図に示す磁界分布となるので、Ｓｉウェハ１１の中心線
上ではサイクロイド運動、その左右周辺ではヘリカル運
動が主体となる。FIG. 3 is a magnetic field strength distribution diagram on the wafer 11 shown at S in FIG. 1, and is drawn divided into a horizontal component and a vertical component. Here, the motion of electrons in the plasma due to the magnetic field can be roughly divided into two types: helical motion (Figure 4 (A)) and cycloid motion (Figure 4 (B)). Helical motion is a motion related to a perpendicular magnetic field. , cycloidal motion is a motion in which electrons are bent by a horizontal magnetic field and drift while being bounced off the cathode. In a magnetic field applied in a loop, the third
Since the magnetic field distribution is as shown in the figure, cycloidal motion is dominant on the center line of the Si wafer 11, and helical motion is dominant on the left and right peripheries thereof.
第５図はウェハ中心からの距離対Ａ２膜厚特性図を示す
。同図より明らかな如く、ＲＦパワー密度が低下すると
Ｓ１ウ工ハ中心部での堆積速度が低下するが、これは、
ＲＦパワー低下によってサイクロイド運動の半径が大に
なり、磁界の影響がなくなるためである。FIG. 5 shows a characteristic diagram of A2 film thickness versus distance from the wafer center. As is clear from the figure, as the RF power density decreases, the deposition rate at the center of the S1 wafer decreases;
This is because the radius of the cycloidal motion becomes larger due to the decrease in RF power, and the influence of the magnetic field disappears.
１．０Ｗ／α２のＲＦパワー密度においては、サイクロ
イド運動及びヘリカル運動が堆積反応に与える影響が同
じになり、均一な膜が形成される。At an RF power density of 1.0 W/α2, the effects of cycloidal motion and helical motion on the deposition reaction are the same, and a uniform film is formed.
更に、ＲＦパワー密度を上げる（例えば１．３Ｗ／ｃｍ
”）と今度はサイクロイド運動が主体になるので、ウェ
ハ中心部においては反応が促進されてＳｉウェハ中心部
だけが堆積速度が速くなる。結局、均一な膜を得るには
一定範囲のＲＦパワー密度にする必要がある。第６図は
ＲＦパワー密度対堆積速度特性図を示す。高ＲＦパワー
密度領域で堆積速度が減衰するのは磁界を印加する本発
明の特徴である。ＲＦパワー密度の有効範囲は０，５Ｗ
／ｅｒａ２〜２．０Ｗ／ｃＭ２にする必要があり、Ｔ
Ｍ Ａを用いたＡ２膜の堆積においての最適値は１．Ｏ
Ｗ／α２〜１．５Ｗ／ｕ２である。Furthermore, increase the RF power density (e.g. 1.3W/cm
”) and this time, the cycloidal motion becomes dominant, so the reaction is promoted in the center of the wafer, and the deposition rate becomes faster only in the center of the Si wafer.In the end, in order to obtain a uniform film, a certain range of RF power density is required. Figure 6 shows a characteristic diagram of RF power density vs. deposition rate.The fact that the deposition rate attenuates in the high RF power density region is a feature of the present invention in which a magnetic field is applied.The effectiveness of RF power density Range is 0.5W
/era2~2.0W/cM2, T
The optimum value for A2 film deposition using MA is 1. O
W/α2 to 1.5 W/u2.
第７図はＴＭＡキャリアガス流吊対堆積速度特性図を示
す。この場合の条件は、ソースガスとしてＴＭＡを用い
、希釈Ｈｚｆｆｉは１．５２／ｍｉｎ 、 ＲＦパワー
密度は１Ｗ／１２、磁界は７８０ガウス、圧力は２．３
Ｔ ｏｒｒである。ＴＭＡソースガス１５ｍ［／ｓｉｎ
以上で堆積速度がＳｉウェハ中心部で下がるのは、ＴＭ
Ａの分子が巨大なためにサイクロイド運動の電子の平均
自由行程が減少してソースガスの励起が完全でなくなる
ためと考えられる。FIG. 7 shows a TMA carrier gas flow versus deposition rate characteristic diagram. The conditions in this case are: TMA is used as the source gas, dilution Hzffi is 1.52/min, RF power density is 1 W/12, magnetic field is 780 Gauss, and pressure is 2.3.
It is Torr. TMA source gas 15m[/sin
The reason why the deposition rate decreases at the center of the Si wafer is because of the TM
This is thought to be because the mean free path of electrons in cycloidal motion decreases because the molecules of A are huge, and the excitation of the source gas becomes incomplete.
つまり、磁界の効果を出すには、ソースガス中の電子の
平均自由行程λｅとラーマ半径ｒｅを同程度にするため
にＲＦパワー又は磁界を強くしなければならない。That is, in order to produce the effect of the magnetic field, the RF power or magnetic field must be strengthened in order to make the mean free path λe of electrons in the source gas and the Rahma radius re comparable.
第８図はウェハに加える磁界による磁束を示す図で、ル
ープ磁界を印加するいわゆるプレーナマグネトロンを用
いる。同図に示すように、ループ状磁束３０に垂直方向
からソースガス３１を導入し、磁束がウェハ１１を責か
ないでウェハ１１表面にループ状に分布し、更に、ガス
が導入されるシャワー状ノズル（図示せず）に近付くに
従って磁界が弱まるように設定することが重要である。FIG. 8 is a diagram showing the magnetic flux due to the magnetic field applied to the wafer, using a so-called planar magnetron that applies a loop magnetic field. As shown in the figure, a source gas 31 is introduced from a direction perpendicular to the loop-shaped magnetic flux 30, and the magnetic flux is distributed in a loop shape on the surface of the wafer 11 without affecting the wafer 11. Furthermore, a shower-shaped nozzle is used to introduce the gas. It is important to set the magnetic field so that it weakens as it approaches (not shown).
このようにすれば、ウェハ１１表面でサイクロイド運動
だけによって励起されたガスがウェハ１１表面近傍で最
終的な堆積反応を生じることになる（表面反応による堆
積を主体とすれば段差部でのカバレージが良い）。又、
ループ状磁界がノズルに近付くに従って弱くなれば、電
子のサイクロイド運動によってソースガスを弱く励起す
ることが可能となり、反応の前段厖を形成して最終反応
を促進する。In this way, the gas excited only by the cycloid motion on the surface of the wafer 11 will cause a final deposition reaction near the surface of the wafer 11 (if the deposition is mainly due to the surface reaction, the coverage at the stepped portion will be reduced). good). or,
If the loop magnetic field becomes weaker as it approaches the nozzle, it becomes possible to weakly excite the source gas due to the cycloidal movement of electrons, forming a pre-reaction chamber and promoting the final reaction.
第９図はＲＦパワー密度対堆積速度特性図を示す。圧力
を上げるとガス中の電子平均自由行程が減少するので、
磁界強度及びＲＦパワーを高くしないとガスの解離反応
を促進し得ない。同図より明らかな如く、磁界を一定に
した場合、圧力を増加させた分だけＲＦパワーを増加さ
せなければならないことがわかる。FIG. 9 shows an RF power density versus deposition rate characteristic diagram. As the pressure increases, the electron mean free path in the gas decreases, so
The gas dissociation reaction cannot be promoted unless the magnetic field strength and RF power are increased. As is clear from the figure, when the magnetic field is kept constant, the RF power must be increased by the amount that the pressure is increased.
結論として、膜厚堆積反応が起る活性化エネルギ以上に
ガス分子を励起してやらなければならないので、ガス圧
力に応じて磁界又はＲＦパワー密度を一定値以上にして
やらなければならないことがわかる。つまり、（Ｉｎ磁
界強度Ｘ（ＲＦパワー密度）／（ガス圧力）の値が堆積
反応の活性化エネルギに比例した一定範囲になるように
設定することが必要である。具体的には、ＲＦパワー密
度が０．５Ｗ／ｃｊ１２〜２．ＯＷ／ｃＭ２、ガス圧力
が１ＴＯｒｒ〜５ＴＯｒ「、磁界強度が２００Ｇ〜１５
００Ｇであり、上記式の値が２０〜３０００Ｇ−Ｗ／ｃ
ｍ２・Ｔｏｒｒになる。特に、第１０図に示す如く、磁
界強度を２００Ｇ以上にすると比抵抗が２０（μΩ−ｃ
ｍ ）と低くなる。In conclusion, it is understood that the gas molecules must be excited to a level higher than the activation energy that causes the film thickness deposition reaction, and therefore the magnetic field or RF power density must be set above a certain value in accordance with the gas pressure. In other words, it is necessary to set the value of (In magnetic field strength Density is 0.5W/cj12~2.OW/cM2, gas pressure is 1TOrr~5TORr, magnetic field strength is 200G~15
00G, and the value of the above formula is 20 to 3000G-W/c
It becomes m2・Torr. In particular, as shown in Figure 10, when the magnetic field strength is increased to 200G or more, the specific resistance decreases to 20 (μΩ-c
m).
このような条件を以てプラズマＣＶＤ法を施すと、薄膜
の膜厚を安定に制御し得、高品質の薄膜装置を形成し得
る。When the plasma CVD method is performed under such conditions, the thickness of the thin film can be stably controlled and a high quality thin film device can be formed.
本発明によれば、（磁界強度）Ｘ（ＲＦパワー密度）／
（ガス圧力）の値を一定値以上に設定してプラズマＣＶ
Ｄ法を行なっているので、これら磁界強度、ＲＦパワー
密度、ガス圧力等の諸条件の間の関係を無視していた従
来の方法に比して薄膜の膜厚を安定に制御し得、これに
より高品質の薄膜装置を得ることができる等の特長を有
する。According to the present invention, (magnetic field strength) x (RF power density)/
Plasma CV by setting the value of (gas pressure) above a certain value
Since the D method is used, the thickness of the thin film can be controlled stably compared to conventional methods that ignore the relationships among various conditions such as magnetic field strength, RF power density, and gas pressure. This method has the advantage that a high quality thin film device can be obtained.
第１図はＭＰ−ＣＶＤ法による膜形成を説明する図、
第２図はプラズマ中の電子の運動を説明する図、第３図
は３ｉウエハ上での磁界強度分布図、第４図は電子の運
動の種類を示す図、
第５図はウェハ中心からの距離対Ａ之膜厚特性図、
第６図はＲＦパワ一方度対堆積速度特性図、第７図はＴ
Ｍ Ａキャリアガス流量対ｊ「積速度特性図、
第８図はウェハに加える磁界による磁束を示す図、
第９図はＲＦパワー密度対堆積速度特性図、第１０図は
磁界強度と比抵抗特性図である。
図中において、
１０はチャンバ、
１１はＳｉウェハ、
１２はＲＦ発振電源、
１３はヒータ、
１４はシャワー状ノズル、
１５はマグネット、
３０はループ状磁束、
３１はソースガス、
ｅは電子、
Ａは粒子、
λＢは電子の平均自由行程、
ｒｅはラーマ半径である。
ＭＰ−ＣＶＤ喰＋：ｋｓｌｌｌ［ｌｃＥ談洲すル園ｍｔ
図
（Ａ） （Ｂ）Ｔ５ス
゛７１りの電子めｊヒ１テ、１青ｒす巧コ第２図
第３図
第４図
←賀γ七捉 ｉ
ＣFigure 1 is a diagram explaining film formation by MP-CVD method, Figure 2 is a diagram explaining the movement of electrons in plasma, Figure 3 is a magnetic field strength distribution diagram on a 3i wafer, and Figure 4 is a diagram of electron Figure 5 is a characteristic diagram of film thickness of A versus distance from the wafer center; Figure 6 is a characteristic diagram of RF power degree versus deposition rate; Figure 7 is a characteristic diagram of film thickness of A versus distance from the wafer center;
M A carrier gas flow rate vs. stacking velocity characteristic diagram, Figure 8 is a diagram showing the magnetic flux due to the magnetic field applied to the wafer, Figure 9 is an RF power density vs. deposition rate characteristic diagram, and Figure 10 is magnetic field strength and resistivity characteristics. In the figure, 10 is a chamber, 11 is a Si wafer, 12 is an RF oscillation power supply, 13 is a heater, 14 is a shower nozzle, 15 is a magnet, 30 is a loop-shaped magnetic flux, 31 is a source gas, and e is electron, A is the particle, λB is the mean free path of the electron, and re is the Rama radius.
Figures (A) (B) T5 71 electronic target, 1 blue r, 2 Figure 3 Figure 4 ← Gamma 7 capture i C
Claims (5)
Ｄ法によって薄膜を形成する薄膜装置の形成方法におい
て、 （磁界強度）×（ＲＦパワー密度）／（ガス圧力）の値
を堆積反応の活性化エネルギに比例した一定範囲に設定
したことを特徴とする薄膜装置の形成方法。(1) Plasma CV using plasma to which a magnetic field is applied
A method for forming a thin film device in which a thin film is formed by method D is characterized in that the value of (magnetic field strength) x (RF power density)/(gas pressure) is set within a certain range proportional to the activation energy of the deposition reaction. A method for forming a thin film device.
自由行程（λｅ）が磁界印加による電子（ｅ）のラーマ
半径（ｒｅ）と同程度になるように、該ＲＦパワー密度
、ガス圧力、磁界強度を一定範囲に設定したことを特徴
とする特許請求の範囲第１項記載の薄膜装置の形成方法
。(2) The RF power density, gas 2. The method of forming a thin film device according to claim 1, wherein the pressure and magnetic field strength are set within a certain range.
Ｗ／ｃｍ＾２、ガス圧力が１Ｔｏｒｒ〜５Ｔｏｒｒ、磁
界強度が２００Ｇ〜１５００Ｇであることを特徴とする
特許請求の範囲第２項記載の薄膜装置の形成方法。(3) The RF power density is 0.5W/cm^2~2.0
3. The method of forming a thin film device according to claim 2, wherein the gas pressure is 1 Torr to 5 Torr, and the magnetic field strength is 200 G to 1500 G.
力）の値が２０〜３０００Ｇ・Ｗ／ｃｍ＾２・Ｔｏｒｒ
の範囲にあることを特徴とする特許請求の範囲第１項記
載の薄膜装置の形成方法。(4) The value of (magnetic field strength) x (RF power density) / (gas pressure) is 20 to 3000 G・W/cm^2・Torr
A method for forming a thin film device according to claim 1, characterized in that the method falls within the range of:
印加するプレーナマグネトロンを用い、ループ磁束が該
ウェハを貫かずに該ウェハ表面にループ状に分布するよ
うに磁界を印加することを特徴とする特許請求の範囲第
１項乃至第４項のうちいずれか一項記載の薄膜装置の形
成方法。(5) As a method of applying a magnetic field, a planar magnetron that applies a loop magnetic field to the wafer is used, and the magnetic field is applied so that the loop magnetic flux does not penetrate the wafer but is distributed in a loop shape on the wafer surface. A method for forming a thin film device according to any one of claims 1 to 4.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19344786A JPS6350477A (en) | 1986-08-19 | 1986-08-19 | Formation of thin film device |
| DE8787111993T DE3783405T2 (en) | 1986-08-19 | 1987-08-18 | SEMICONDUCTOR ARRANGEMENT WITH A THICK LAYER WIRING AND METHOD FOR PRODUCING THE SAME. |
| EP87111993A EP0256557B1 (en) | 1986-08-19 | 1987-08-18 | Semiconductor device having thin film wiring layer and method of forming thin wiring layer |
| KR1019870009034A KR900006486B1 (en) | 1986-08-19 | 1987-08-19 | Semiconductor device having thin film layer and method of forming thin wiring layer |
| US07/740,872 US5148259A (en) | 1986-08-19 | 1991-07-31 | Semiconductor device having thin film wiring layer of aluminum containing carbon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19344786A JPS6350477A (en) | 1986-08-19 | 1986-08-19 | Formation of thin film device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6350477A true JPS6350477A (en) | 1988-03-03 |
Family
ID=16308144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19344786A Pending JPS6350477A (en) | 1986-08-19 | 1986-08-19 | Formation of thin film device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6350477A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH046834A (en) * | 1990-04-25 | 1992-01-10 | Casio Comput Co Ltd | Manufacture of silicon nitride film |
| WO1998033362A1 (en) * | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Plasma device |
| KR20030069704A (en) * | 2002-02-22 | 2003-08-27 | 주식회사 아토 | Process chamber for semiconductor chip |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5778941A (en) * | 1980-11-04 | 1982-05-17 | Matsushita Electric Ind Co Ltd | Method and apparatus for plasma deposition |
-
1986
- 1986-08-19 JP JP19344786A patent/JPS6350477A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5778941A (en) * | 1980-11-04 | 1982-05-17 | Matsushita Electric Ind Co Ltd | Method and apparatus for plasma deposition |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH046834A (en) * | 1990-04-25 | 1992-01-10 | Casio Comput Co Ltd | Manufacture of silicon nitride film |
| WO1998033362A1 (en) * | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Plasma device |
| US6357385B1 (en) | 1997-01-29 | 2002-03-19 | Tadahiro Ohmi | Plasma device |
| JP2008277306A (en) * | 1997-01-29 | 2008-11-13 | Foundation For Advancement Of International Science | Plasma device |
| JP2009117373A (en) * | 1997-01-29 | 2009-05-28 | Foundation For Advancement Of International Science | Plasma device |
| JP4356117B2 (en) * | 1997-01-29 | 2009-11-04 | 財団法人国際科学振興財団 | Plasma device |
| KR20030069704A (en) * | 2002-02-22 | 2003-08-27 | 주식회사 아토 | Process chamber for semiconductor chip |
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