JPS5688315A - Apparatus for gaseous phase growth - Google Patents
Apparatus for gaseous phase growthInfo
- Publication number
- JPS5688315A JPS5688315A JP16618379A JP16618379A JPS5688315A JP S5688315 A JPS5688315 A JP S5688315A JP 16618379 A JP16618379 A JP 16618379A JP 16618379 A JP16618379 A JP 16618379A JP S5688315 A JPS5688315 A JP S5688315A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electric field
- ions
- gaseous phase
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain uniform film quality and to improve the characteristics by separating the electric field for generating plasma and the electric field for accelerating ions, and confining the property of the ions compiled by the magnetic field. CONSTITUTION:Electrodes 4 and 5 and an intermediate grid electrode 6 are arranged in a vacuum container 1. The electrode 4 and the grid electrode 6 are used to generate plasma. A voltage, e.g., -100v is applied to the electrode 5. The silicon ions which are decomposed from SiH4 and the like by the flow discharge are accelerated to the electrode 5 by the electric field formed between the electrodes 5 and 6. The pattern of the electrode 6 is of a mesh state so that the ions can be flowed into the ion accelerating region from the glow discharge region. An electromagnet 7 which forms the vertical magnetic field with respect to the electric field between the electrode 5 and 6 is arranged so as to hold the ion accelerating region from both sides. Thus, the film quality of the film which is grown in gaseous phase can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16618379A JPS5688315A (en) | 1979-12-20 | 1979-12-20 | Apparatus for gaseous phase growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16618379A JPS5688315A (en) | 1979-12-20 | 1979-12-20 | Apparatus for gaseous phase growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5688315A true JPS5688315A (en) | 1981-07-17 |
| JPS6114652B2 JPS6114652B2 (en) | 1986-04-19 |
Family
ID=15826604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16618379A Granted JPS5688315A (en) | 1979-12-20 | 1979-12-20 | Apparatus for gaseous phase growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5688315A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6364645U (en) * | 1986-10-15 | 1988-04-28 | ||
| JPS6388962U (en) * | 1986-11-27 | 1988-06-09 |
-
1979
- 1979-12-20 JP JP16618379A patent/JPS5688315A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6114652B2 (en) | 1986-04-19 |
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