JPS5511127A - Forming method for oxidation film - Google Patents

Forming method for oxidation film

Info

Publication number
JPS5511127A
JPS5511127A JP8298378A JP8298378A JPS5511127A JP S5511127 A JPS5511127 A JP S5511127A JP 8298378 A JP8298378 A JP 8298378A JP 8298378 A JP8298378 A JP 8298378A JP S5511127 A JPS5511127 A JP S5511127A
Authority
JP
Japan
Prior art keywords
gas
ionized
source
evaporation
board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8298378A
Other languages
Japanese (ja)
Inventor
Rokuro Watabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP8298378A priority Critical patent/JPS5511127A/en
Publication of JPS5511127A publication Critical patent/JPS5511127A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a good quality oxidation film with a high speed, by generating magnetic field in vacuum vessel and also introducing O2 gas, at the time of forming thin film by ion plating method. CONSTITUTION:A fixed quantity of O2 gas is introduced in the belljar 1 through the valve 3 after exhausting the balljar 1 at a fixed vacuum degree by the vacuum pump through the duct 2. At the same time, glow discharge is caused between the evaporation source 5 and the base board 8 by the high voltage direct current source 9 and O2 gas is ionized. Also, ionized O2 gas is focused on the central plate of the belljar 1 by magnetic field generated by turning current on the focusing coil 11 and distribution density of O2 gas at the lower part of the board 8, is heightened. At the same time, current is supplied from the power source 6 for evaporation to the source 5 and the evaporation substance 4 is melted and evaporated. Accordingly, the molecule 4' of evaporated substance 4 is ionized and is reacted with ionized O2 gas distributed in the upper part of the source 5 densely and then, oxide is made. Moreover, the above oxide is forcibly adhered on the board 8 by electric field and oxide film is formed.
JP8298378A 1978-07-10 1978-07-10 Forming method for oxidation film Pending JPS5511127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8298378A JPS5511127A (en) 1978-07-10 1978-07-10 Forming method for oxidation film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8298378A JPS5511127A (en) 1978-07-10 1978-07-10 Forming method for oxidation film

Publications (1)

Publication Number Publication Date
JPS5511127A true JPS5511127A (en) 1980-01-25

Family

ID=13789444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8298378A Pending JPS5511127A (en) 1978-07-10 1978-07-10 Forming method for oxidation film

Country Status (1)

Country Link
JP (1) JPS5511127A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987002026A1 (en) * 1984-05-28 1987-04-09 Shuhara Akira Process for producing silicon dioxide film
JPS62287072A (en) * 1986-06-06 1987-12-12 Matsushita Electric Ind Co Ltd Thin film forming apparatus
US4882198A (en) * 1986-11-26 1989-11-21 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
US4951604A (en) * 1989-02-17 1990-08-28 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
US5443862A (en) * 1992-08-28 1995-08-22 Saint-Gobain Vitrage International Process for the treatment of thin films having properties of electrical conduction and/or reflection in the infrared
CN110767447A (en) * 2018-07-25 2020-02-07 浙江清华柔性电子技术研究院 Flexible energy storage film, preparation method thereof and film capacitor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987002026A1 (en) * 1984-05-28 1987-04-09 Shuhara Akira Process for producing silicon dioxide film
JPS62287072A (en) * 1986-06-06 1987-12-12 Matsushita Electric Ind Co Ltd Thin film forming apparatus
US4882198A (en) * 1986-11-26 1989-11-21 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
US4951604A (en) * 1989-02-17 1990-08-28 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
US5443862A (en) * 1992-08-28 1995-08-22 Saint-Gobain Vitrage International Process for the treatment of thin films having properties of electrical conduction and/or reflection in the infrared
CN110767447A (en) * 2018-07-25 2020-02-07 浙江清华柔性电子技术研究院 Flexible energy storage film, preparation method thereof and film capacitor
CN110767447B (en) * 2018-07-25 2021-12-14 浙江清华柔性电子技术研究院 Flexible energy storage film, preparation method thereof and film capacitor

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