JPS5798678A - Method and device for dry etching - Google Patents

Method and device for dry etching

Info

Publication number
JPS5798678A
JPS5798678A JP17382180A JP17382180A JPS5798678A JP S5798678 A JPS5798678 A JP S5798678A JP 17382180 A JP17382180 A JP 17382180A JP 17382180 A JP17382180 A JP 17382180A JP S5798678 A JPS5798678 A JP S5798678A
Authority
JP
Japan
Prior art keywords
clearance
cathode
magnetic
magnet
piece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17382180A
Other languages
Japanese (ja)
Other versions
JPS6011109B2 (en
Inventor
Haruo Okano
Yasuharu Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17382180A priority Critical patent/JPS6011109B2/en
Priority to EP81109891A priority patent/EP0054201B1/en
Priority to DE8181109891T priority patent/DE3175576D1/en
Priority to DD81235634A priority patent/DD208011A5/en
Publication of JPS5798678A publication Critical patent/JPS5798678A/en
Priority to US06/559,857 priority patent/US4492610A/en
Publication of JPS6011109B2 publication Critical patent/JPS6011109B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Abstract

PURPOSE:To etch a semiconductor material at a high speed without electrical damages by accelerating the impingement dissociation of electrons and a gas with the magnetic field by a magnet above or below electrodes intersecting with the electric field between the electrodes thereby improving electric discharge efficiency. CONSTITUTION:The part enclosed by a clearance 2 assuming the closed loop of the top surface in a boxlike ball piece 3 made of a magnetic material is supported by a permanent magnet 1. The magnet 1 and the piece 3 oppose to anode 4 and form a part of cathode 8. The magnet 1, of which the top surface is N and the bottom surface is S, generates magnetic lines of force B approximately parallel to the anode 4 on the piece 3 is striding over the clearance 2. When there are no magnetic fields in the clearance 2, a sluice valve 13 is opened to evacuate the inside of a reaction vessel 4, after which a gas to be ionized is introduced through a port 18, and high frequency electric power is applied to the cathode 8, then glow discharge occurs and cathode drop voltage (Vdc) is generated on the cathode 8. When there is a magnetic force in the clearance 2, the electrons near the clearance receive drift electrolysis by said magnetic field and the electric field determined by the Vdc and the high frequency electric power, so that they are trapped in the drift orbit near the clearance, whereby the ionization efficiency near 15 the same is increased considerably.
JP17382180A 1980-12-11 1980-12-11 Dry etching method and device Expired JPS6011109B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP17382180A JPS6011109B2 (en) 1980-12-11 1980-12-11 Dry etching method and device
EP81109891A EP0054201B1 (en) 1980-12-11 1981-11-25 Dry etching device and method
DE8181109891T DE3175576D1 (en) 1980-12-11 1981-11-25 Dry etching device and method
DD81235634A DD208011A5 (en) 1980-12-11 1981-12-10 DRYING METHOD AND DEVICE
US06/559,857 US4492610A (en) 1980-12-11 1983-12-12 Dry Etching method and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17382180A JPS6011109B2 (en) 1980-12-11 1980-12-11 Dry etching method and device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP28195786A Division JPS62271432A (en) 1986-11-28 1986-11-28 Dry etching apparatus

Publications (2)

Publication Number Publication Date
JPS5798678A true JPS5798678A (en) 1982-06-18
JPS6011109B2 JPS6011109B2 (en) 1985-03-23

Family

ID=15967769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17382180A Expired JPS6011109B2 (en) 1980-12-11 1980-12-11 Dry etching method and device

Country Status (1)

Country Link
JP (1) JPS6011109B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58151028A (en) * 1982-01-26 1983-09-08 マテリアルズ・リサ−チ・コ−ポレ−シヨン Magnetically strengthened plasma treating method and device
JPS59154800A (en) * 1983-02-22 1984-09-03 東京応化工業株式会社 High frequency oscillator for generating plasma
JPS59175125A (en) * 1983-03-24 1984-10-03 Toshiba Corp Dry etching device
JPS63109181A (en) * 1986-10-23 1988-05-13 Anelva Corp Method and device for taper etching

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1770788A3 (en) 2005-09-29 2011-09-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58151028A (en) * 1982-01-26 1983-09-08 マテリアルズ・リサ−チ・コ−ポレ−シヨン Magnetically strengthened plasma treating method and device
JPH0430177B2 (en) * 1982-01-26 1992-05-21
JPS59154800A (en) * 1983-02-22 1984-09-03 東京応化工業株式会社 High frequency oscillator for generating plasma
JPH0534800B2 (en) * 1983-02-22 1993-05-24 Tokyo Oka Kogyo Kk
JPS59175125A (en) * 1983-03-24 1984-10-03 Toshiba Corp Dry etching device
JPS63109181A (en) * 1986-10-23 1988-05-13 Anelva Corp Method and device for taper etching

Also Published As

Publication number Publication date
JPS6011109B2 (en) 1985-03-23

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