JPS51114382A - Diguid phase epitanial crystal growth - Google Patents

Diguid phase epitanial crystal growth

Info

Publication number
JPS51114382A
JPS51114382A JP3939575A JP3939575A JPS51114382A JP S51114382 A JPS51114382 A JP S51114382A JP 3939575 A JP3939575 A JP 3939575A JP 3939575 A JP3939575 A JP 3939575A JP S51114382 A JPS51114382 A JP S51114382A
Authority
JP
Japan
Prior art keywords
epitanial
diguid
phase
crystal growth
asubstrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3939575A
Other languages
Japanese (ja)
Other versions
JPS5318464B2 (en
Inventor
Yoshiharu Horikoshi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3939575A priority Critical patent/JPS51114382A/en
Publication of JPS51114382A publication Critical patent/JPS51114382A/en
Publication of JPS5318464B2 publication Critical patent/JPS5318464B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To carry out an epitaxial growth of 3-5 group semiconducter compound in liquid phase by means of a method free from gas etching on a surface of asubstrate.
COPYRIGHT: (C)1976,JPO&Japio
JP3939575A 1975-04-01 1975-04-01 Diguid phase epitanial crystal growth Granted JPS51114382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3939575A JPS51114382A (en) 1975-04-01 1975-04-01 Diguid phase epitanial crystal growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3939575A JPS51114382A (en) 1975-04-01 1975-04-01 Diguid phase epitanial crystal growth

Publications (2)

Publication Number Publication Date
JPS51114382A true JPS51114382A (en) 1976-10-08
JPS5318464B2 JPS5318464B2 (en) 1978-06-15

Family

ID=12551798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3939575A Granted JPS51114382A (en) 1975-04-01 1975-04-01 Diguid phase epitanial crystal growth

Country Status (1)

Country Link
JP (1) JPS51114382A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS585511A (en) * 1981-07-01 1983-01-12 株式会社　冨士精密製作所 Double nut

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4839865A (en) * 1971-09-21 1973-06-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4839865A (en) * 1971-09-21 1973-06-12

Also Published As

Publication number Publication date
JPS5318464B2 (en) 1978-06-15

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