JPS5572030A - Gas phase growing of compound semiconductor - Google Patents

Gas phase growing of compound semiconductor

Info

Publication number
JPS5572030A
JPS5572030A JP14623378A JP14623378A JPS5572030A JP S5572030 A JPS5572030 A JP S5572030A JP 14623378 A JP14623378 A JP 14623378A JP 14623378 A JP14623378 A JP 14623378A JP S5572030 A JPS5572030 A JP S5572030A
Authority
JP
Japan
Prior art keywords
chamber
gas
passed
flow controller
mixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14623378A
Other languages
Japanese (ja)
Other versions
JPS5741808B2 (en
Inventor
Kazuto Ogasawara
Tsutomu Kiyono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14623378A priority Critical patent/JPS5572030A/en
Publication of JPS5572030A publication Critical patent/JPS5572030A/en
Publication of JPS5741808B2 publication Critical patent/JPS5741808B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To provide a uniformly grown film layer by a method wherein III group metal sources are contained in two chambers in the same reaction tube, each chamber being subject to a passing-carrier gas mixture of either H2 or an inert gas and a chloride of V group metal, respectively.
CONSTITUTION: N2 gas is introduced 27 into the reaction tube 18, and Ga 19, 20 and GaAs substrate 25 are heated 29, 30 to a specific temperature. N2 gas is stopped and H2 mixed with AsCl3 is passed through the bubbler 32 and the flow controller 33 to be supplied 35 into the chamber 22. Meanwhile, N2 mixed with AsCl3 is passed through the bubbler 37 and the flow controller 38 and supplied 40 into the chamber 22. In each chamber, gas formed by reaction with Ga is uniformly mixed by barrier walls 23aW23c and sent to the grow chamber 24, where a high resistivity buffer layer is formed on the GaAs substrate 25. Then, H2 and N2 are varied in the rate of flow, and H2S 41 is passed through the flow controller 43 into the grow chamber 24 to permit at active layer to be laid on the buffer layer. The doping gas flow rate is further increased to continuously grow the low resistivity electrode layer. This provides both layers with extremely small dispersion in thickness.
COPYRIGHT: (C)1980,JPO&Japio
JP14623378A 1978-11-27 1978-11-27 Gas phase growing of compound semiconductor Granted JPS5572030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14623378A JPS5572030A (en) 1978-11-27 1978-11-27 Gas phase growing of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14623378A JPS5572030A (en) 1978-11-27 1978-11-27 Gas phase growing of compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5572030A true JPS5572030A (en) 1980-05-30
JPS5741808B2 JPS5741808B2 (en) 1982-09-04

Family

ID=15403109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14623378A Granted JPS5572030A (en) 1978-11-27 1978-11-27 Gas phase growing of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5572030A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS612306U (en) * 1984-06-08 1986-01-09 株式会社椿本チエイン transport vehicle

Also Published As

Publication number Publication date
JPS5741808B2 (en) 1982-09-04

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