JPS5572030A - Gas phase growing of compound semiconductor - Google Patents
Gas phase growing of compound semiconductorInfo
- Publication number
- JPS5572030A JPS5572030A JP14623378A JP14623378A JPS5572030A JP S5572030 A JPS5572030 A JP S5572030A JP 14623378 A JP14623378 A JP 14623378A JP 14623378 A JP14623378 A JP 14623378A JP S5572030 A JPS5572030 A JP S5572030A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gas
- passed
- flow controller
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To provide a uniformly grown film layer by a method wherein III group metal sources are contained in two chambers in the same reaction tube, each chamber being subject to a passing-carrier gas mixture of either H2 or an inert gas and a chloride of V group metal, respectively.
CONSTITUTION: N2 gas is introduced 27 into the reaction tube 18, and Ga 19, 20 and GaAs substrate 25 are heated 29, 30 to a specific temperature. N2 gas is stopped and H2 mixed with AsCl3 is passed through the bubbler 32 and the flow controller 33 to be supplied 35 into the chamber 22. Meanwhile, N2 mixed with AsCl3 is passed through the bubbler 37 and the flow controller 38 and supplied 40 into the chamber 22. In each chamber, gas formed by reaction with Ga is uniformly mixed by barrier walls 23aW23c and sent to the grow chamber 24, where a high resistivity buffer layer is formed on the GaAs substrate 25. Then, H2 and N2 are varied in the rate of flow, and H2S 41 is passed through the flow controller 43 into the grow chamber 24 to permit at active layer to be laid on the buffer layer. The doping gas flow rate is further increased to continuously grow the low resistivity electrode layer. This provides both layers with extremely small dispersion in thickness.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14623378A JPS5572030A (en) | 1978-11-27 | 1978-11-27 | Gas phase growing of compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14623378A JPS5572030A (en) | 1978-11-27 | 1978-11-27 | Gas phase growing of compound semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5572030A true JPS5572030A (en) | 1980-05-30 |
JPS5741808B2 JPS5741808B2 (en) | 1982-09-04 |
Family
ID=15403109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14623378A Granted JPS5572030A (en) | 1978-11-27 | 1978-11-27 | Gas phase growing of compound semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5572030A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS612306U (en) * | 1984-06-08 | 1986-01-09 | 株式会社椿本チエイン | transport vehicle |
-
1978
- 1978-11-27 JP JP14623378A patent/JPS5572030A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5741808B2 (en) | 1982-09-04 |
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