JPS5522861A - Thin film growth method - Google Patents

Thin film growth method

Info

Publication number
JPS5522861A
JPS5522861A JP9643578A JP9643578A JPS5522861A JP S5522861 A JPS5522861 A JP S5522861A JP 9643578 A JP9643578 A JP 9643578A JP 9643578 A JP9643578 A JP 9643578A JP S5522861 A JPS5522861 A JP S5522861A
Authority
JP
Japan
Prior art keywords
casing
density
material compound
impurity
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9643578A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP9643578A priority Critical patent/JPS5522861A/en
Publication of JPS5522861A publication Critical patent/JPS5522861A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To control a low impurity density with a good accuracy by performing a vapor growth through mixing of material compound having a low impurity density with an impurity source weakened by the material compound.
CONSTITUTION: A hydrogen purified is flow-controlled by a valve 11, 21 and 31 and is introduced to pipe lines 13, 23, and 33. A material compound 2 is contained in a casing 27 and switched by cocks 24 and 25. A casing 37 includes a material compound containing added impurity compound, and switched by cocks 34 and 35. The temeparture of compounds 2 and 3 is set to hole a predetermined mole ratio. The hydrogen and compounds 2 and 3 are mixed in a pipe line 14, and introduced to a reaction tube for vapor growth. The compound 2 in a casing 27 may be one that is added to have a density different from the casing 37. According to such a process the impurity density having a particularly low level can be controlled with a good accuracy. The carrier density in the growth layer including a conduction mode variation from a p-type to n-type can be remarkable changed.
COPYRIGHT: (C)1980,JPO&Japio
JP9643578A 1978-08-07 1978-08-07 Thin film growth method Pending JPS5522861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9643578A JPS5522861A (en) 1978-08-07 1978-08-07 Thin film growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9643578A JPS5522861A (en) 1978-08-07 1978-08-07 Thin film growth method

Publications (1)

Publication Number Publication Date
JPS5522861A true JPS5522861A (en) 1980-02-18

Family

ID=14164924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9643578A Pending JPS5522861A (en) 1978-08-07 1978-08-07 Thin film growth method

Country Status (1)

Country Link
JP (1) JPS5522861A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6418728U (en) * 1987-07-23 1989-01-30

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6418728U (en) * 1987-07-23 1989-01-30

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