JPS5583228A - Gas phase growing of 3, 5 group compound mixed crystal semiconductor - Google Patents
Gas phase growing of 3, 5 group compound mixed crystal semiconductorInfo
- Publication number
- JPS5583228A JPS5583228A JP16083378A JP16083378A JPS5583228A JP S5583228 A JPS5583228 A JP S5583228A JP 16083378 A JP16083378 A JP 16083378A JP 16083378 A JP16083378 A JP 16083378A JP S5583228 A JPS5583228 A JP S5583228A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- group element
- mixed crystal
- downstream
- gas phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To provide a mixed crystal in a simple device by a method wherein carrier gas sends bromine into III group element material region, and the reacted gas is mixed with V group element or carrier gas which contains its compound, at the downstream of material region.
CONSTITUTION: Reaction tube 1 is devided into two chambers at downstream where boats for Ga3 and In4 are placed. H2 gas passes through bromine reservoir 5 and introduced into each two chamber. H2 gas which contains hydrogen compound of V group element is introduced 6 downstream and transferred to the substrate 7. Waste gas is discharged from hole 8. The structure eliminates the need for conventional complex unit to produce H2 gas flow which contains III group element carrier. And similarly to conventional unit, the amount of III and V group element in gas phase can be varied independently, thus facilitating control of mixed crystal composition.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16083378A JPS5583228A (en) | 1978-12-19 | 1978-12-19 | Gas phase growing of 3, 5 group compound mixed crystal semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16083378A JPS5583228A (en) | 1978-12-19 | 1978-12-19 | Gas phase growing of 3, 5 group compound mixed crystal semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5583228A true JPS5583228A (en) | 1980-06-23 |
Family
ID=15723389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16083378A Pending JPS5583228A (en) | 1978-12-19 | 1978-12-19 | Gas phase growing of 3, 5 group compound mixed crystal semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5583228A (en) |
-
1978
- 1978-12-19 JP JP16083378A patent/JPS5583228A/en active Pending
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