JPS5583228A - Gas phase growing of 3, 5 group compound mixed crystal semiconductor - Google Patents

Gas phase growing of 3, 5 group compound mixed crystal semiconductor

Info

Publication number
JPS5583228A
JPS5583228A JP16083378A JP16083378A JPS5583228A JP S5583228 A JPS5583228 A JP S5583228A JP 16083378 A JP16083378 A JP 16083378A JP 16083378 A JP16083378 A JP 16083378A JP S5583228 A JPS5583228 A JP S5583228A
Authority
JP
Japan
Prior art keywords
gas
group element
mixed crystal
downstream
gas phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16083378A
Other languages
Japanese (ja)
Inventor
Takashi Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16083378A priority Critical patent/JPS5583228A/en
Publication of JPS5583228A publication Critical patent/JPS5583228A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide a mixed crystal in a simple device by a method wherein carrier gas sends bromine into III group element material region, and the reacted gas is mixed with V group element or carrier gas which contains its compound, at the downstream of material region.
CONSTITUTION: Reaction tube 1 is devided into two chambers at downstream where boats for Ga3 and In4 are placed. H2 gas passes through bromine reservoir 5 and introduced into each two chamber. H2 gas which contains hydrogen compound of V group element is introduced 6 downstream and transferred to the substrate 7. Waste gas is discharged from hole 8. The structure eliminates the need for conventional complex unit to produce H2 gas flow which contains III group element carrier. And similarly to conventional unit, the amount of III and V group element in gas phase can be varied independently, thus facilitating control of mixed crystal composition.
COPYRIGHT: (C)1980,JPO&Japio
JP16083378A 1978-12-19 1978-12-19 Gas phase growing of 3, 5 group compound mixed crystal semiconductor Pending JPS5583228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16083378A JPS5583228A (en) 1978-12-19 1978-12-19 Gas phase growing of 3, 5 group compound mixed crystal semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16083378A JPS5583228A (en) 1978-12-19 1978-12-19 Gas phase growing of 3, 5 group compound mixed crystal semiconductor

Publications (1)

Publication Number Publication Date
JPS5583228A true JPS5583228A (en) 1980-06-23

Family

ID=15723389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16083378A Pending JPS5583228A (en) 1978-12-19 1978-12-19 Gas phase growing of 3, 5 group compound mixed crystal semiconductor

Country Status (1)

Country Link
JP (1) JPS5583228A (en)

Similar Documents

Publication Publication Date Title
JPS5583228A (en) Gas phase growing of 3, 5 group compound mixed crystal semiconductor
JPS5694751A (en) Vapor growth method
JPS5220388A (en) Furnace system for chemical reaction
JPS5398775A (en) Gas phase growth unit
JPS542300A (en) Methdo and apparatus for vapor phase growth of magnespinel
JPS5229171A (en) Process for crowing semiconductor crystal
JPS558003A (en) Gaseous growth method and vertical type gaseous growth device
JPS5312802A (en) Production of synthesis gas
JPS5358761A (en) Vapor phase growth apparatus
JPS5357752A (en) Impurity deposaition method to semiconductor
JPS54137973A (en) Formation method of plasma nitride
JPS5553415A (en) Selective epitaxial growing
TEMPS et al. Research into product structure of oxygen with ethylene reactions
JPS5439314A (en) Method of manufacturing highly pure silicon iron
JPS51111390A (en) Organic elemental analyser
JPS51136100A (en) Clean purge system of reactor
JPS5710921A (en) Gas phase epitaxial growth device
JPS55124275A (en) Semiconductor device
JPS5518024A (en) Vapor phase reactor
JPS5771897A (en) Prepration of epitaxial crystal in liquid phase and its device
JPS5513989A (en) Apparatus for vapor phase epitaxial growth
JPS57157530A (en) Forming method for insulator thin-film
JPS5727020A (en) Vapor phase crystal growth device
JPS53148277A (en) Controlling method of goping gas in vapor phase growth of semiconductor
JPS5578525A (en) Vapor phase epitaxial growth